E hana mākou i kēlā me kēia hana no ka maikaʻi a me ka maikaʻi loa, a e hoʻolalelale i ko mākou ala no ke kū ʻana ma ke kūlana o nā ʻoihana kiʻekiʻe a me nā ʻenehana kiʻekiʻe no ka Hot sale Factory ʻO ka pauka silicon carbide maikaʻi loa no ka uhi ʻana, hilinaʻi iā mākou, ʻoe. E loaʻa i kahi pane ʻoi aku ka nui o ka ʻoihana ʻāpana kaʻa.
E hana mākou i kēlā me kēia hana no ka maikaʻi a me ka maikaʻi, a e hoʻolalelale i ko mākou ala no ke kū ʻana i ke kūlana o nā ʻoihana kiʻekiʻe a me nā ʻenehana kiʻekiʻe o ka honua no , He hui kūʻai akamai kā mākou hui, kumu waiwai ikaika, ʻenehana nui. ikaika, nā mea hana kiʻekiʻe, nā ala hoʻāʻo piha, a me nā lawelawe ma hope o ke kūʻai aku. ʻO kā mākou mau waiwai he hiʻohiʻona nani, ka hana maikaʻi a me ka maikaʻi ʻoi aku ka maikaʻi a lanakila i nā ʻae like ʻole o nā mea kūʻai aku ma ka honua holoʻokoʻa.
ʻO ka uhi SiC o ka substrate Graphite no nā noi Semiconductor e hana i kahi ʻāpana me ka maʻemaʻe maikaʻi a me ke kū'ē i ka lewa oxidizing.
Hoʻohana ʻia ʻo CVD SiC a i ʻole CVI SiC i ka Graphite o nā ʻāpana hoʻolālā maʻalahi a paʻakikī paha. Hiki ke hoʻopili ʻia ka uhi ʻana i nā mānoanoa like ʻole a i nā ʻāpana nui loa.
Nā hiʻohiʻona:
· ʻOi loa ka Thermal Shock Resistance
· Kūleʻa haʻalulu kino maikaʻi
· Kūʻē Kemika maikaʻi loa
· Maʻemaʻe Kiʻekiʻe
· Loaʻa ma ke ʻano paʻakikī
· Hoʻohana ma lalo o ka Oxidizing Atmosphere
Nā ʻano maʻamau o ka Material Graphite Base:
ʻIke ʻia ka mānoanoa: | 1.85 g/cm3 |
Ke kū'ē uila: | 11 μΩm |
ʻO ke koʻikoʻi ʻoluʻolu: | 49 MPa (500kgf/cm2) |
Paʻa Paʻa: | 58 |
lehu: | <5ppm |
ʻO ka wela wela: | 116 W/mK (100 kcal/mhr- ℃) |
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