Epitaxial Epi Graphite Barrel Susceptor

Epitaxial Epi Graphite Barrel Susceptor

Epitaxial Epi Graphite Barrel SusceptorHe kākoʻo kūikawā i hoʻolālā ʻia a me ka mea hoʻomehana i hoʻohana ʻia e paʻa a wela i nā substrates semiconductor i ka wā o ka hana ʻana e like me nā kaʻina hana Deposition a Epitaxy.

ʻO ke ʻano o kona ʻano he cylindrical a i ʻole ke ʻano barela liʻiliʻi.

ʻO nā hana nui o ka epitaxial barrel susceptor:

- Kākoʻo substrate: paʻa paʻa i nā wafers semiconductor he nui;
-Ke kumu wela: hāʻawi i nā mahana kiʻekiʻe e pono ai no ka ulu ʻana ma o ka hoʻomehana ʻana;
-Ke kūlike o ka mahana: e hōʻoia i ka hoʻomehana ʻana o nā substrates;
-Rotation: huli pinepine i ka wā o ka ulu ʻana e hoʻomaikaʻi i ka mahana a me ka hoʻoili kinoea like ʻole.

Ke kumu hana o ka Epi graphite barrel susceptor:
- I loko o ka epitaxial reactor, ua wela ka pahu susceptor i ka mahana i makemake ʻia (maʻamau 1000 ℃-1200 ℃ no ka epitaxy silicon);
-Ka pahu susceptor huli e hōʻoiaʻiʻo like ka wela mahele a me ke kinoea kahe;
- Hoʻoheheʻe ʻia nā kinoea hopena i nā wela kiʻekiʻe, e hana ana i nā papa epitaxial ma ka ʻili substrate.

Nā noi:
- Hoʻohana mua ʻia no ka ulu ʻana o ka epitaxial silicon
-Pono no ka epitaxy o nā mea semiconductor ʻē aʻe e like me GaAs, InP, etc.

Hoʻohana ʻo VET Energy i ka graphite maʻemaʻe kiʻekiʻe me ka uhi CVD-SiC e hoʻomaikaʻi i ke kūpaʻa kemika:

ʻO nā pono o ka VET Energy Epitaxial Epi Graphite Barrel Susceptor:

-Ke kūpaʻa wela kiʻekiʻe;
-Hoʻohui wela maikaʻi;
- Hiki iā ia ke hana i nā substrate he nui i ka manawa like, hoʻomaikaʻi i ka hana pono;
-Kemika inert, mālama i kahi kūlana ulu maʻemaʻe kiʻekiʻe.