Loaʻa iā mākou kahi limahana hana maikaʻi loa e hana i nā nīnau mai nā mea kūʻai aku. ʻO kā mākou pahuhopu "100% ka hoʻokō ʻana o nā mea kūʻai aku e kā mākou huahana a lawelawe maikaʻi loa, kūʻai aku i ke kumu kūʻai a me kā mākou lawelawe ʻoihana" a loaʻa ka leʻaleʻa mai kahi kaulana i waena o nā mea kūʻai aku. Me ka nui o nā hale hana, hiki iā mākou ke hāʻawi i kahi ʻano like ʻole o ke kumukūʻai Discountable GaN-Basedepitaxial ma Sic Substrates 4′′, Hoʻokipa maikaʻi mākou i nā hoa ʻoihana liʻiliʻi mai nā ʻano like ʻole o ka nohona, manaʻolana e hoʻokumu i ka ʻoihana aloha a hui pū me ʻoe a loaʻa. he pahuhopu lanakila.
Loaʻa iā mākou kahi limahana hana maikaʻi loa e hana i nā nīnau mai nā mea kūʻai aku. ʻO kā mākou pahuhopu "100% ka hoʻokō ʻana o nā mea kūʻai aku e kā mākou huahana a lawelawe maikaʻi loa, kūʻai aku i ke kumu kūʻai a me kā mākou lawelawe ʻoihana" a loaʻa ka leʻaleʻa mai kahi kaulana i waena o nā mea kūʻai aku. Me ka nui o nā hale hana, hiki iā mākou ke hāʻawi i nā ʻano like ʻoleKina GaN Substrates a me GaN Film, Ke kakali nei mākou i mua e launa pū me nā mea kūʻai aku ma ka honua holoʻokoʻa. Manaʻo mākou hiki iā mākou ke hōʻoluʻolu iā ʻoe me kā mākou huahana kiʻekiʻe a me ka lawelawe kūpono. Hoʻokipa maikaʻi mākou i nā mea kūʻai aku e kipa i kā mākou hui a kūʻai i kā mākou huahana.

ʻO SiC uhi graphite MOCVD Wafer lawe

Hana ʻia kā mākou mau mea hoʻomalu āpau i ka graphite isostatic ikaika kiʻekiʻe. E pōmaikaʻi mai ka maʻemaʻe kiʻekiʻe o kā mākou graphites - hoʻomohala kūikawā no nā kaʻina paʻakikī e like me ka epitaxy, ka ulu ʻana o ke aniani, ka hoʻokomo ʻana i ka ion a me ka etching plasma, a me ka hana ʻana i nā chips LED.

Hōʻike huahana
ʻO ka uhi SiC o ka substrate Graphite no nā noi Semiconductor e hana i kahi ʻāpana me ka maʻemaʻe maikaʻi a me ke kū'ē i ka lewa oxidizing.
Hoʻohana ʻia ʻo CVD SiC a i ʻole CVI SiC i ka Graphite o nā ʻāpana hoʻolālā maʻalahi a paʻakikī paha. Hiki ke hoʻopili ʻia ka uhi ʻana i nā mānoanoa like ʻole a i nā ʻāpana nui loa.

Compon

ʻO nā pōmaikaʻi kūikawā o kā mākou mau mea hoʻopili graphite i uhi ʻia ʻo SiC me ka maʻemaʻe kiʻekiʻe loa, ka uhi homogenous a me ke ola lawelawe maikaʻi loa. Loaʻa iā lākou ke kūpaʻa kemika kiʻekiʻe a me nā waiwai paʻa wela.

Mālama mākou i ka hoʻomanawanui loa i ka wā e hoʻohana ai i ka uhi SiC, me ka hoʻohana ʻana i ka mīkini kiʻekiʻe kiʻekiʻe e hōʻoiaʻiʻo i kahi ʻano susceptor kūlike. Hoʻopuka pū mākou i nā mea me nā waiwai pale uila kūpono no ka hoʻohana ʻana i nā ʻōnaehana inductively. Hele mai nā ʻāpana a pau me ka palapala hoʻokō maʻemaʻe a me ka dimensional.

Noi:

Nā hiʻohiʻona:
· ʻOi loa ka Thermal Shock Resistance
· Kūleʻa haʻalulu kino maikaʻi
· Kūʻē Kemika maikaʻi loa
· Maʻemaʻe Kiʻekiʻe
· Loaʻa ma ke ʻano paʻakikī
· Hoʻohana ma lalo o ka Oxidizing AtmosphereNā ʻano maʻamau o ka Material Graphite Base:

Loaʻa iā mākou kahi limahana hana maikaʻi loa e hana i nā nīnau mai nā mea kūʻai aku. ʻO kā mākou pahuhopu "100% ka hoʻokō ʻana o nā mea kūʻai aku e kā mākou huahana a lawelawe maikaʻi loa, kūʻai aku i ke kumu kūʻai a me kā mākou lawelawe ʻoihana" a loaʻa ka leʻaleʻa mai kahi kaulana i waena o nā mea kūʻai aku. Me ka nui o nā hale hana, hiki iā mākou ke hāʻawi i kahi ʻano like ʻole o ke kumukūʻai Discountable GaN-Basedepitaxial ma Sic Substrates 4′′, Hoʻokipa maikaʻi mākou i nā hoa ʻoihana liʻiliʻi mai nā ʻano like ʻole o ka nohona, manaʻolana e hoʻokumu i ka ʻoihana aloha a hui pū me ʻoe a loaʻa. he pahuhopu lanakila.
Kumukuai hoemiKina GaN Substrates a me GaN Film, Ke kakali nei mākou i mua e launa pū me nā mea kūʻai aku ma ka honua holoʻokoʻa. Manaʻo mākou hiki iā mākou ke hōʻoluʻolu iā ʻoe me kā mākou huahana kiʻekiʻe a me ka lawelawe kūpono. Hoʻokipa maikaʻi mākou i nā mea kūʻai aku e kipa i kā mākou hui a kūʻai i kā mākou huahana.