Ua uhi ʻia ʻo SiC

ʻO VET ENERGY, ka mea hana alakaʻi o ka CVD SIC coating ma Kina

Hoʻololi nā mea i ka wā e hiki mai ana

ʻO Silicon carbide (SiC) kahi mea hou semiconductor hui. Loaʻa i ka carbide silikoni kahi ākea nui (e pili ana i 3 mau manawa silika), kiʻekiʻe koʻikoʻi koʻikoʻi kahua ikaika (ma kahi o 10 mau manawa silika), kiʻekiʻe thermal conductivity (ma kahi o 3 mau manawa silika). He mea koʻikoʻi ia o ka hanauna hou semiconductor. Hoʻohana nui ʻia nā uhi SiC i ka ʻoihana semiconductor a me nā photovoltaics solar. ʻO ka mea kūikawā, ʻo nā susceptors i hoʻohana ʻia i ka ulu epitaxial o nā LED a me ka epitaxy aniani hoʻokahi e koi i ka hoʻohana ʻana i ka uhi SiC. Ma muli o ka piʻi ikaika o nā LED i ka ʻoihana kukui a me ka hōʻike, a me ka hoʻomohala ikaika o ka ʻoihana semiconductor,ʻO ka huahana uhi SiCmaikaʻi loa nā manaʻo.

KĀHĀNUI

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Noi huahana a me ka hana                                                                                               Nā noi huahana a me nā hoʻohana

ʻO ka ʻoihana kristal hoʻokahi, GaN, AlN, sapphire a me nā wahi wāwae MOCVD ʻē aʻe. -Graphite base coating no ka ulu ʻana o ka epitaxial silikon kristal hoʻokahi

ʻO ka hana nui: ka maʻemaʻe kiʻekiʻe, ka pale ʻana i ka erosion, ka conductivity thermal kiʻekiʻe, - kaʻina MOCVD, ka uhi kumu graphite no ka ulu ʻana o ka epitaxial GaN

pale wela kiʻekiʻe, haʻahaʻa hoʻonui hoʻonui wela.

 

ʻOihana Semiconductor
ʻOihana Semiconductor
ʻOihana Semiconductor
ʻO ka photovoltaic o ka lā

 

ʻO ka hoʻoili wela 250 W/m °K ʻO ke ala uila laser, RT
Hoʻonui wela (CTE) 4.5 x 10-6°K ʻO ka mahana lumi i 950 °C, silica dilatometer
       Waiwai Waiwai ʻano hana
ʻO ka mānoanoa 3.21 g/cc Piko-lele a me ke ana
wela kūikawā 0.66 J/g °K Pulsed laser flash
Ka ikaika wiliwili 450 MPa560 MPa 4 piko piko, RT4 piko piko, 1300°
ʻOoleʻa haʻihaʻi 2.94 MPa m1/2 Microindentation
ʻoʻoleʻa 2800 ʻO Vicker, 500g ukana
Elastic ModulusYoung's Modulus 450 GPa430 GPa 4 pt piko, RT4 pt piko, 1300 °C
Ka nui o ka palaoa 2 - 10 µm SEM

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Maʻemaʻe, SEM Structure, mānoanoa ka nānā ʻana oKa uhi ʻana o SiC

ʻO ka maʻemaʻe o nā uhi SiC ma ka graphite me ka hoʻohana ʻana i ka CVD he kiʻekiʻe e like me 99.9995%. ʻO fcc kona hale. ʻO nā kiʻiʻoniʻoni SiC i uhi ʻia ma ka graphite he (111) e like me ka mea i hōʻike ʻia ma ka ʻikepili XRD (Fig.1) e hōʻike ana i kona kūlana crystalline kiʻekiʻe. ʻO ka mānoanoa o ke kiʻiʻoniʻoni SiC he ʻano like ʻole e like me ka mea i hōʻike ʻia ma ka Fig. 2.

ʻO ka ʻikepili SEM o ke kiʻi ʻoniʻoni ʻoniʻoni ʻo CVD SiC, ʻo ka nui aniani ka 2 ~ 1 Opm

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Kiʻi 2: ʻaʻahu mānoanoa o nā kiʻiʻoniʻoni SiC

ʻO ke ʻano aniani o ka kiʻiʻoniʻoni CVD SiC he ʻano cubic i hoʻohālikelike ʻia i ke alo, a kokoke ka orientation ulu kiʻi i ka 100%

图片1

SEM a me XRD o ke kiʻi beta-SiC ma ka graphite

图片1

KE KUMU EPITAXIAL CRYSTAL SILICON

ʻO ka hana huahana a me nā manaʻo noi.

Ua uhi ʻia ʻo Silicon carbide (SiC).ʻO ka base ka waihona maikaʻi loa no ka silika aniani hoʻokahi a me ka epitaxy GaN, ʻo ia ka mea nui o ka umu epitaxy. ʻO ke kumu kahi mea hana hana nui no ka silika monocrystalline no nā kaapuni hoʻohui nui. Loaʻa iā ia ka maʻemaʻe kiʻekiʻe, ke kūpaʻa wela kiʻekiʻe, ka pale ʻana i ka corrosion, ka paʻa ʻana o ka ea maikaʻi a me nā ʻano waiwai maikaʻi ʻē aʻe.

Hoʻohana a hoʻohana i ka huahana

ʻO ka uhi kumu graphite no ka ulu ʻana o ka epitaxial silika aniani kūpono no nā mīkini Aixtron, etc. Ka mānoanoa o ka uhi: 90 ~ 150um ʻO 55mm ke anawaena o ka lua wafer.

PALAPALA PALAPALA

GAupidpelitcubaetiaonnd

graphite crucible coatingno ka silikoni aniani hoʻokahi ma ke ʻano huki pololei

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ʻO ka hana ʻenehana silikon kristal hoʻokahi ma ke ʻano huki pololei,kīʻaha ʻekolu petalede like me ke kiʻekiʻe o ka wela wela a me nā ʻāpana hoʻohaʻahaʻa wela like ʻole, kahe kahe e like me ka hoʻokuʻu ʻia ʻana o ke kinoea hoʻoheheʻe ʻana i nā ʻāpana hoʻoheheʻe wela, kahe kahe e like me ke kaila holo kinoea hoʻopau.
图片16图片17
Nā hiʻohiʻona huahana
ʻO ke kūpaʻa kiʻekiʻe, ka pale ʻana i ka corrosion, ke ola lawelawe lōʻihi, hiki ke hoʻomaikaʻi i ka maikaʻi a me ka puka o ka wafer. Me ka haʻahaʻa haʻahaʻa haʻahaʻa o ka hoʻonui ʻana i ka wela, ke kūpaʻa wela kiʻekiʻe, ke kūpaʻa ʻaʻahu kiʻekiʻe, ka insulation maikaʻi, ke kūpaʻa kemika maikaʻi, kokoke i ka poni (ʻulaʻula) ma waho o ke komo ʻana o ka mālamalama.
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No ke aha e koho ai iā mākou

Nā lako ʻoihana a me ka hui

Papa 1000 hale hana lepo ole

*ʻoi aku ma mua o 3000 square meters o 1000 papa lepo-free hale hana

*Hui Pūʻulu R&D o ke Keʻena ʻEpekema Kina

*Hana kūikawā a me nā lako ho'āʻo pololei

*ʻO ka lawa kūpono a me ke kūlana kiʻekiʻe86b0afa78106ff600d26e97300491b

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Hana wikiwiki

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No ka hana ma hope o ke kūʻai aku, mālama mau kā mākou hui lawelawe me ʻoe a kū mau i kāu lawelawe. ʻO kā mākou ʻoihana ma hope o ke kūʻai aku ʻana me ka lele ʻana i kā mākou ʻenehana e kōkua iā ʻoe e hoʻoponopono i nā pilikia ma ka pūnaewele. ʻO kā mākou palapala hōʻoia he 12 mahina ma hope o ka lawe ʻana.

Nā kikoʻī paʻi

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ʻO Ningbo VET Energy Technology Co., Ltd he mea hana loea no nā ʻāpana graphite, ʻoi aku ka nui o ka hoʻomohala ʻana i nā mea semiconductor hou a me ka nānā ʻana i ka noiʻi a me ka hoʻomohala ʻana o ka uhi SiC. ʻO nā huahana koʻikoʻi o ka hui ʻo ia nā susceptors SiC-coated no ka ʻoihana LED a me ka ʻoihana silika monocrystalline. ʻO ke kiʻi ʻoniʻoni SiC i hoʻohana ʻia no ka ʻoihana LED a me ka ʻoihana silikon monocrystalline he ʻāpana cubic, nona ke ʻano lattice like me ke daimana, a ʻo kona paʻakikī e like me ke daimana. ʻO ka Silicon carbide ka mea ʻoi loa o ke ākea ākea ākea semiconductor, a loaʻa iā ia nā manaʻo noi ākea i ka ʻoihana semiconductor. Eia kekahi, ʻo ka silicon carbide ka thermal conductivity kiʻekiʻe, kahi liʻiliʻi liʻiliʻi thermal expansion coefficient, kiʻekiʻe kiʻekiʻe ka pale ʻana i ka wela (e pili ana i 2700 degere Celsius), a me ke kūpaʻa corrosion maikaʻi loa. Hoʻohana nui ʻia nā huahana hoʻopili silicon carbide o ka hui i ka aerospace, photovoltaic industry, nuclear energy, high-speed rail, automotive a me nā ʻoihana ʻē aʻe.

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