ʻO Gallium arsenide-phosphide epitaxial structures, e like me nā hale hana o ka substrate ASP type (ET0.032.512TU), no ka. ka hana ʻana i nā kristal LED ʻulaʻula planar.
Kūlana ʻenehana kumu
i nā hale gallium arsenide-phosphide
| 1, SubstrateGaAs | |
| a. ʻano conductivity | uila uila |
| b. Kū'ē, ohm-cm | 0,008 |
| c. Kaila-latticeorientation | (100) |
| d. Ke kuhi hewa ʻana o ka ʻili | (1−3)° |
| 2. Papa epitaxial GaAs1-х Pх | |
| a. ʻano conductivity | uila uila |
| b. ʻO ka maʻiʻo Phosphorus i ka papa hoʻololi | mai х = 0 a х ≈ 0,4 |
| c. ʻO ka Phosphorus i loko o kahi papa o ka haku mele mau | х ≈ 0,4 |
| d. ʻO ka manaʻo o ka mea lawe, сm3 | (0,2−3,0)·1017 |
| e. Ka lōʻihi o ka nalu ma ka palena kiʻekiʻe o ka spectrum photoluminescence, nm | 645−673 nm |
| f. ʻO ka lōʻihi o ka hawewe ma ke kiʻekiʻe loa o ka spectrum electroluminescence | 650−675 nm |
| g. Ka mānoanoa papa mau, micron | Ma kahi o 8 nm |
| h. Layerthickness (nui), micron | Ma kahi o 30 nm |
| 3 Papa me ka papa epitaxial | |
| a. Hoʻololi, micron | Ma kahi o 100 um |
| b. Mānoanoa, micron | 360−600 um |
| c. Kenimika huinaha | Ma kahi o 6 cm2 |
| d. Ka ikaika o ka malamalama kiko'ī (ma hope o ka diffusionZn), cd/amp | Ma kahi o 0,05 cd/amp |
