GaN Epitaxy na tushen Silicon

Takaitaccen Bayani:


  • Wurin Asalin:China
  • Tsarin Crystal:FCCβ lokaci
  • Yawan yawa:3.21 g/cm
  • Tauri:2500 Vickers
  • Girman hatsi:2 ~ 10 μm
  • Tsaftar Sinadari:99.99995%
  • Ƙarfin zafi:640J·kg-1·K-1
  • Zazzabi Sublimation:2700 ℃
  • Ƙarfin Felexural:415 Mpa (RT 4-Point)
  • Modul na Young:430 Gpa (4pt lankwasa, 1300 ℃)
  • Ƙarfafa Ƙwararru (CTE):4.5 10-6K-1
  • Thermal conductivity:300 (W/mK)
  • Cikakken Bayani

    Tags samfurin

    Bayanin Samfura

    Kamfaninmu yana ba da sabis na tsarin aikin SiC ta hanyar CVD akan farfajiyar graphite, yumbu da sauran kayan, don haka iskar gas na musamman da ke ɗauke da carbon da silicon amsa a babban zafin jiki don samun ƙwayoyin SiC masu tsabta, ƙwayoyin da aka ajiye akan saman kayan da aka rufe, kafa SIC kariya Layer.

    Babban fasali:

    1. High zafin jiki oxidation juriya:

    juriya na iskar oxygen har yanzu yana da kyau sosai lokacin da zafin jiki ya kai 1600 C.

    2. Babban tsarki: sanya ta hanyar tururin sinadarai a ƙarƙashin yanayin chlorination mai zafi.

    3. Juriya juriya: babban taurin, m surface, lafiya barbashi.

    4. Lalata juriya: acid, alkali, gishiri da kuma Organic reagents.

    Babban Bayani na CVD-SIC Coating

    SiC-CVD Properties

    Tsarin Crystal FCC β lokaci
    Yawan yawa g/cm ³ 3.21
    Tauri Vickers taurin 2500
    Girman hatsi μm 2 ~ 10
    Tsaftar Sinadari % 99.99995
    Ƙarfin zafi J·k-1 · K-1 640
    Zazzabi Sublimation 2700
    Ƙarfin Felexural MPa (RT 4-maki) 415
    Modul na Young Gpa (4pt lankwasa, 1300 ℃) 430
    Ƙarfafa Ƙarfafawa (CTE) 10-6K-1 4.5
    Ƙarfafawar thermal (W/mK) 300

     

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