SiC Rufi Graphite dillalai, sic shafi, SiC shafi mai rufi na Graphite substrate for Semiconductor

Silicon carbide mai rufifaifan graphite shine shirya Layer na kariya na silicon carbide akan saman graphite ta hanyar tururi na zahiri ko sinadarai da fesa. The tattalin silicon carbide m Layer za a iya da tabbaci bonded zuwa graphite matrix, yin surface na graphite tushe m da free of voids, ba da graphite matrix musamman Properties, ciki har da hadawan abu da iskar shaka juriya, acid da Alkali juriya, yashwa juriya, lalata juriya. da dai sauransu A halin yanzu, Gan rufi yana daya daga cikin mafi kyau core aka gyara ga epitaxial girma na silicon carbide.

Silicon carbide semiconductor shine ainihin kayan sabon haɓaka babban rata na semiconductor. Na'urorinsa suna da halaye na tsayin daka na zafin jiki, juriya mai girma, babban mita, babban iko da juriya na radiation. Yana da abũbuwan amfãni daga cikin sauri sauyawa gudun da high dace. Zai iya rage yawan amfani da wutar lantarki, inganta ƙarfin jujjuya makamashi da rage girman samfurin. An fi amfani dashi a cikin sadarwar 5g, tsaro na ƙasa da masana'antar soja Filin RF wanda ke wakilta ta sararin samaniya da filin lantarki wanda ke wakilta ta sabbin motocin makamashi da "sababbin ababen more rayuwa" suna da fa'ida da fa'ida mai yawa na kasuwa a fagen farar hula da na soja.

Silicon carbide Substrate shine ainihin kayan sabon haɓaka mai girman rata semiconductor. Silicon carbide substrate ana amfani da shi a cikin kayan lantarki na lantarki, lantarki da sauran filayen. Shi ne a gaban karshen m band rata semiconductor masana'antu sarkar kuma shi ne sabon-baki da kuma asali core key material.Silicon carbide substrate za a iya raba iri biyu: Semi insulating da conductive. Daga cikin su, Semi insulating silicon carbide substrate yana da high resistivity (resistivity ≥ 105 Ω · cm). Semi insulating substrate hade da iri-iri gallium nitride epitaxial takardar za a iya amfani da matsayin kayan RF na'urorin, wanda aka yafi amfani a 5g sadarwa, kasa tsaro da kuma soja masana'antu a sama al'amuran; Sauran shine madaidaicin siliki carbide substrate tare da ƙarancin juriya (kewayon juriya shine 15 ~ 30m Ω · cm). Za'a iya amfani da madaidaicin epitaxy na siliki carbide substrate da silicon carbide azaman kayan na'urorin wuta. Babban yanayin aikace-aikacen shine motocin lantarki, tsarin wutar lantarki da sauran filayen