Sabuwar hanyar da za ta dace da nau'ikan semiconductor masu sirara kamar nanometer kaɗan ya haifar da ba kawai binciken kimiyya ba har ma da sabon nau'in transistor don na'urorin lantarki masu ƙarfi. Sakamakon, wanda aka buga a cikin Wasiƙun Physics, ya tada sha'awa sosai.
Nasarar ta samo asali ne ta kusancin haɗin gwiwa tsakanin masana kimiyya a Jami'ar Linköping da SweGaN, kamfani mai jujjuyawa daga binciken kimiyyar kayan aiki a LiU. Kamfanin yana kera abubuwan da aka keɓance na lantarki daga gallium nitride.
Gallium nitride, GaN, semiconductor ne da ake amfani da shi don ingantattun diodes masu fitar da haske. Yana iya, duk da haka, yana da amfani a wasu aikace-aikace, kamar transistor, tunda yana iya jure yanayin zafi da ƙarfin halin yanzu fiye da sauran semiconductor da yawa. Waɗannan su ne mahimman kaddarorin don abubuwan haɗin lantarki na gaba, ba kaɗan ga waɗanda aka yi amfani da su a cikin motocin lantarki ba.
Gallium nitride tururi an yarda ya taso a kan wafer na siliki carbide, yana samar da murfin bakin ciki. Hanyar da wani abu na crystalline ke girma a kan wani yanki na wani ana kiransa "epitaxy." Ana amfani da hanyar sau da yawa a cikin masana'antar semiconductor tun yana ba da 'yanci mai girma wajen ƙayyade duka tsarin crystal da sinadarai na fim ɗin nanometer da aka kafa.
Haɗuwa da gallium nitride, GaN, da silicon carbide, SiC (dukansu biyu na iya tsayayya da filayen lantarki mai ƙarfi), yana tabbatar da cewa madaurin sun dace da aikace-aikacen da ake buƙatar manyan iko.
Dace a saman tsakanin kayan crystalline guda biyu, gallium nitride da silicon carbide, ba shi da kyau. Atom ɗin sun ƙare bai dace da juna ba, wanda ke haifar da gazawar transistor. An magance wannan ta hanyar bincike, wanda daga baya ya haifar da mafita na kasuwanci, wanda aka sanya wani madaidaicin Layer na aluminum nitride tsakanin yadudduka biyu.
Injiniyoyi a SweGaN sun lura kwatsam cewa transistor nasu na iya jurewa ƙarfin filin da ya fi yadda suke tsammani, kuma sun kasa fahimtar dalilin da ya sa da farko. Ana iya samun amsar a matakin atomic - a cikin ma'aurata masu mahimmanci na tsaka-tsaki a cikin abubuwan.
Masu bincike a LiU da SweGaN, karkashin jagorancin LiU's Lars Hultman da Jun Lu, sun gabatar a cikin wasiƙun Physics na Applied Physics bayanin abin da ya faru, kuma sun bayyana hanyar kera transistor tare da ma fi ƙarfin jure ƙarfin ƙarfin lantarki.
Masanan kimiyyar sun gano wata hanyar ci gaban epitaxial da ba a san su ba a baya wanda suka sanya wa suna "ci gaban epitaxial transmorphic." Yana haifar da daɗaɗa tsakanin yadudduka daban-daban a hankali a hankali a cikin nau'ikan nau'ikan zarra. Wannan yana nufin cewa za su iya girma biyu yadudduka, gallium nitride da aluminum nitride, a kan silicon carbide a hanya domin sarrafa a atomic matakin yadda yadudduka ke da alaka da juna a cikin kayan. A cikin dakin gwaje-gwaje sun nuna cewa kayan yana jure wa high voltages, har zuwa 1800 V. Idan irin wannan irin ƙarfin lantarki aka sanya a kan wani classic silicon tushen bangaren, tartsatsin wuta zai fara tashi da transistor zai lalace.
"Muna taya SweGaN murna yayin da suka fara tallata abin da aka kirkira. Yana nuna ingantaccen haɗin gwiwa da kuma amfani da sakamakon bincike a cikin al'umma. Saboda kusancin da muke da shi da abokan aikinmu na baya waɗanda yanzu ke aiki a kamfanin, bincikenmu cikin sauri yana da tasiri a waje da duniyar ilimi,” in ji Lars Hultman.
Kayayyakin da Jami'ar Linköping ke bayarwa. Monica Westman Svenselius ta rubuta ta asali. Lura: Ana iya gyara abun ciki don salo da tsayi.
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Lokacin aikawa: Mayu-11-2020