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Yayin da hanyoyin kera na'urori na kan layi ke ci gaba da samun nasara, wata shahararriyar sanarwa da ake kira "Dokar Moore" tana yawo a cikin masana'antar. Gordon Moore daya daga cikin wadanda suka kafa Intel ne ya gabatar da shi a shekarar 1965. Babban abin da ke cikinsa shi ne: adadin transistor da za a iya saukar da shi a cikin da'ira mai hadewa zai ninka kusan kowane watanni 18 zuwa 24. Wannan doka ba kawai wani bincike da tsinkaya na ci gaban yanayin masana'antu ba, amma har ma da karfi don ci gaban masana'antun masana'antu na semiconductor - duk abin da ke yin transistor tare da ƙananan girman da kwanciyar hankali. Daga shekarun 1950 zuwa yau, kimanin shekaru 70, an ɓullo da jimillar BJT, MOSFET, CMOS, DMOS, da matasan BiCMOS da fasahar aiwatar da BCD.
1. BJT
Bipolar junction transistor (BJT), wanda aka fi sani da triode. Matsakaicin caji a cikin transistor ya samo asali ne saboda yaduwa da motsi na masu ɗaukar kaya a mahadar PN. Tunda ya ƙunshi kwararar electrons da ramuka, ana kiransa na'urar bipolar.
Idan aka waiwayi tarihin haihuwarsa. Saboda ra'ayin maye gurbin vacuum triodes tare da m amplifiers, Shockley ya ba da shawarar gudanar da bincike na asali a kan semiconductor a lokacin rani na 1945. A cikin rabi na biyu na 1945, Bell Labs ya kafa ƙungiyar binciken kimiyyar lissafi mai ƙarfi wanda Shockley ke jagoranta. A cikin wannan rukuni, ba kawai masana kimiyya ba, har ma da injiniyoyin da'ira da masana kimiyya, ciki har da Bardeen, masanin ilimin kimiyyar lissafi, da Brattain, masanin kimiyyar gwaji. A cikin watan Disambar 1947, wani al'amari da al'ummomin baya suka yi la'akari da shi a matsayin babban abin tarihi ya faru da kyau - Bardeen da Brattain sun yi nasarar ƙirƙira transistor na farko na germanium a duniya tare da haɓakawa na yanzu.
Bardeen da Brattain transistor na farko na lamba
Ba da daɗewa ba, Shockley ya ƙirƙira transistor junction bipolar a cikin 1948. Ya ba da shawarar cewa transistor na iya haɗa da haɗin pn guda biyu, ɗayan gaba da son zuciya, ɗayan kuma baya son zuciya, kuma ya sami takardar izini a watan Yuni 1948. A cikin 1949, ya buga cikakken ka'idar. na aiki na junction transistor. Fiye da shekaru biyu bayan haka, masana kimiyya da injiniyoyi a Bell Labs sun ɓullo da wani tsari don cimma yawan samar da transistor (mafi mahimmanci a 1951), buɗe sabon zamani na fasahar lantarki. Dangane da gudummawar da suka bayar wajen kera transistor, Shockley, Bardeen da Brattain tare sun sami kyautar Nobel ta Physics a 1956.
Zane mai sauƙi na tsarin NPN transistor bipolar junction
Game da tsarin transistor junction bipolar, BJT na gama gari sune NPN da PNP. Ana nuna cikakken tsarin ciki a cikin hoton da ke ƙasa. Yankin najasa na semiconductor wanda ke daidai da emitter shine yankin emitter, wanda ke da yawan adadin kuzari; yankin semiconductor na ƙazanta wanda ya dace da tushe shine yanki na tushe, wanda ke da faɗin bakin ciki sosai da ƙarancin ƙwayar doping; yankin najasa na semiconductor wanda ya dace da mai tarawa shine yankin mai tattarawa, wanda ke da babban yanki da ƙarancin adadin kuzari.
Abubuwan fa'idodin fasahar BJT sune saurin amsawa, haɓakawa mai ƙarfi (canjin wutar lantarki na shigarwa daidai da manyan sauye-sauyen fitarwa na yanzu), ƙaramin ƙara, daidaiton analog mai ƙarfi, da ƙarfin tuƙi na yanzu; rashin amfani shine ƙananan haɗin kai (zurfin tsaye ba za a iya ragewa tare da girman gefe ba) da yawan amfani da wutar lantarki.
2. MOS
Metal Oxide Semiconductor Field Effect Transistor (Metal Oxide Semiconductor FET), wato transistor tasirin filin da ke sarrafa canjin tashar semiconductor (S) ta hanyar amfani da wutar lantarki zuwa ƙofar karfe Layer (M-metal aluminum) da tushen ta hanyar oxide Layer (O-insulating Layer SiO2) don haifar da tasirin filin lantarki. Tunda ƙofa da tushen, da ƙofar da magudanar ruwa suna keɓanta da Layer Insulating SiO2, MOSFET kuma ana kiranta transistor filin filin ƙofar da aka keɓe. A cikin 1962, Bell Labs a hukumance ya ba da sanarwar ci gaba mai nasara, wanda ya zama ɗaya daga cikin mahimman abubuwan ci gaba a tarihin ci gaban semiconductor kuma kai tsaye ya aza harsashin fasaha don zuwan ƙwaƙwalwar semiconductor.
Ana iya raba MOSFET zuwa tashar P da tashar N bisa ga nau'in tashar mai gudanarwa. Dangane da girman girman wutar lantarki, ana iya raba shi zuwa: nau'in ragewa - lokacin da wutar lantarki ta ƙofar ba ta cika ba, akwai tashar gudanarwa tsakanin magudanar ruwa da tushen; nau'in haɓakawa-na na'urorin tashar N (P), akwai tashar gudanarwa kawai lokacin da ƙarfin wutar lantarki ya fi (kasa da) sifili, kuma MOSFET mai ƙarfi shine nau'in haɓaka tashar N.
Babban bambance-bambance tsakanin MOS da triode sun haɗa da amma ba'a iyakance ga abubuwan masu zuwa ba:
-Triodes na'urorin biyu ne saboda yawancin masu ɗaukar nauyi da marasa rinjaye suna shiga cikin gudanarwa a lokaci guda; yayin da MOS ke gudanar da wutar lantarki kawai ta hanyar mafi yawan masu dako a cikin semiconductor, kuma ana kiranta transistor unipolar.
-Triodes sune na'urori masu sarrafawa a halin yanzu tare da yawan amfani da wutar lantarki; yayin da MOSFETs sune na'urori masu sarrafa wutar lantarki tare da ƙarancin wutar lantarki.
-Triodes suna da babban juriya, yayin da MOS tubes suna da ƙananan juriya, kawai 'yan ɗari miliyoyi. A cikin na'urorin lantarki na yanzu, ana amfani da bututun MOS gabaɗaya azaman masu sauyawa, galibi saboda ingancin MOS yana da inganci idan aka kwatanta da triodes.
-Triodes suna da ingantacciyar farashi mai fa'ida, kuma bututun MOS suna da tsada sosai.
A zamanin yau, ana amfani da bututun MOS don maye gurbin triodes a mafi yawan al'amuran. Sai kawai a cikin wasu ƙananan iko ko yanayin rashin ƙarfi, za mu yi amfani da triodes la'akari da fa'idar farashin.
3. CMOS
Semiconductor Metal Oxide Semiconductor: Fasahar CMOS tana amfani da nau'in p-type da nau'in n-nau'in ƙarfe oxide semiconductor transistor (MOSFETs) don gina na'urorin lantarki da da'irori dabaru. Hoton da ke gaba yana nuna na'urar inverter na CMOS gama gari, wanda ake amfani da shi don "1→0" ko "0→1".
Adadin da ke biyowa wani yanki ne na CMOS na yau da kullun. Gefen hagu shine NMS, kuma gefen dama shine PMOS. An haɗa igiyoyin G na MOS guda biyu tare a matsayin shigarwar ƙofar gama gari, kuma sandunan D suna haɗe tare azaman fitarwa na gama gari. An haɗa VDD zuwa tushen PMOS, kuma VSS an haɗa shi da tushen NMOS.
A cikin 1963, Wanlass da Sah na Fairchild Semiconductor sun kirkiro da'irar CMOS. A cikin 1968, Gidan Rediyon Amurka (RCA) ya ƙirƙira samfurin farko na CMOS hadedde, kuma tun daga lokacin, da'irar CMOS ta sami babban ci gaba. Amfaninsa shine ƙananan amfani da wutar lantarki da haɗin kai mai girma (Tsarin STI / LOCOS na iya kara inganta haɗin kai); rashin amfaninsa shine kasancewar tasirin kulle (ana amfani da junction junction baya son rai azaman keɓewa tsakanin bututun MOS, kuma tsangwama na iya samar da ingantaccen madauki cikin sauƙi kuma ya ƙone kewaye).
4. DMOS
Semiconductor Metal Oxide Mai Rarraba Sau Biyu: Kama da tsarin na'urorin MOSFET na yau da kullun, yana da tushe, magudanar ruwa, kofa da sauran na'urorin lantarki, amma raguwar wutar lantarki na ƙarshen magudanar yana da girma. Ana amfani da tsarin watsawa sau biyu.
Hoton da ke ƙasa yana nuna ɓangaren giciye na daidaitaccen tashar N-tashar DMOS. Irin wannan nau'in na'urar DMOS yawanci ana amfani da shi a cikin aikace-aikacen sauya ƙananan gefe, inda aka haɗa tushen MOSFET zuwa ƙasa. Bugu da kari, akwai P-tashar DMOS. Irin wannan nau'in na'urar DMOS yawanci ana amfani da ita a manyan aikace-aikacen sauya fasalin gefe, inda tushen MOSFET ya haɗa da ingantaccen ƙarfin lantarki. Mai kama da CMOS, na'urorin DMOS masu dacewa suna amfani da tashar N-channel da MOSFET na P-tashar akan guntu ɗaya don samar da ƙarin ayyukan sauyawa.
Dangane da hanyar tashar, ana iya raba DMOS zuwa nau'ikan biyu, wato a tsaye biyu-diffused karfe oxide semiconductor filin tasirin transistor VDMOS (Vertical Double-Diffused MOSFET) da kuma na gefe biyu-diffused karfe oxide semiconductor filin tasirin transistor LDMOS (Lateral Double Diffused) - MOSFET mai yaduwa).
An tsara na'urorin VDMOS tare da tashoshi na tsaye. Idan aka kwatanta da na'urorin DMOS na gefe, suna da ƙarfin rugujewa mafi girma da iya aiki na yanzu, amma juriya har yanzu yana da girma.
An ƙera na'urorin LDMOS tare da tashoshi na gefe kuma na'urorin MOSFET masu ƙarfin asymmetric ne. Idan aka kwatanta da na'urorin DMOS na tsaye, suna ba da damar rage juriya da saurin sauyawa.
Idan aka kwatanta da MOSFET na al'ada, DMOS yana da ƙarfin ƙarfin ƙarfi da ƙarancin juriya, don haka ana amfani dashi sosai a cikin manyan na'urorin lantarki kamar na'urorin wutar lantarki, kayan aikin wutar lantarki da abubuwan hawan lantarki.
5. BiCMOS
Bipolar CMOS fasaha ce da ke haɗa CMOS da na'urorin bipolar akan guntu ɗaya a lokaci guda. Asalin ra'ayinsa shine a yi amfani da na'urorin CMOS azaman babban kewayawa naúrar, da ƙara na'urorin biyu ko da'irori inda ake buƙatar manyan lodi masu ƙarfi. Saboda haka, da'irori na BiCMOS suna da fa'idodin babban haɗin gwiwa da ƙarancin amfani da wutar lantarki na CMOS, da fa'idodin babban saurin da ƙarfin tuƙi na yanzu na da'irori BJT.
STMicroelectronics'BiCMOS SiGe (silicon germanium) fasaha yana haɗa RF, analog da dijital sassa akan guntu guda ɗaya, wanda zai iya rage yawan abubuwan waje da haɓaka amfani da wutar lantarki.
6. BCD
Bipolar-CMOS-DMOS, wannan fasaha na iya yin na'urorin bipolar, CMOS da DMOS akan guntu ɗaya, wanda ake kira tsarin BCD, wanda STMicroelectronics (ST) ya fara haɓaka a cikin 1986.
Bipolar ya dace da da'irori na analog, CMOS ya dace da da'irori na dijital da dabaru, kuma DMOS ya dace da na'urori masu ƙarfi da ƙarfin lantarki. BCD ya haɗu da fa'idodin ukun. Bayan ci gaba da haɓakawa, ana amfani da BCD sosai a cikin samfuran a cikin fagagen sarrafa wutar lantarki, samun bayanan analog da masu kunna wuta. Dangane da gidan yanar gizon hukuma na ST, babban tsari na BCD har yanzu yana kusa da 100nm, 90nm har yanzu yana cikin ƙirar samfuri, kuma fasahar 40nmBCD na samfuran sa na gaba na gaba.
Lokacin aikawa: Satumba-10-2024