Silicon carbide (SiC) sabon abu ne na semiconductor. Silicon carbide yana da babban rata na band (kimanin sau 3 silicon), babban ƙarfin filin (kimanin sau 10 silicon), haɓakar zafi mai girma (kimanin sau 3 silicon). Yana da mahimmanci na gaba-ƙarni abu na semiconductor. Ana amfani da suturar SiC sosai a cikin masana'antar semiconductor da hasken rana photovoltaics. Musamman ma, abubuwan da ake amfani da su a cikin ci gaban epitaxial na LEDs da Si single crystal epitaxy suna buƙatar amfani da suturar SiC. Saboda haɓakar haɓakar LEDs a cikin masana'antar hasken wuta da nuni, da haɓakar haɓaka masana'antar semiconductor,SiC shafi samfurinfatan suna da kyau sosai.
FILIN APPLICATION
Tsarkake, Tsarin SEM, Binciken kauri naSiC shafi
Tsaftar suturar SiC akan graphite ta amfani da CVD ya kai 99.9995%. Tsarinsa shine fcc. Fina-finan SiC da aka rufa a kan graphite (111) sun daidaita kamar yadda aka nuna a cikin bayanan XRD (Fig.1) yana nuna babban ingancinsa. Kaurin fim ɗin SiC daidai ne kamar yadda aka nuna a hoto na 2.
Hoto 2: kauri kauri na SiC films SEM da XRD na beta-SiC fim akan graphite
Bayanan SEM na CVD SiC na bakin ciki fim, girman crystal shine 2 ~ 1 Opm
Tsarin lu'ulu'u na fim ɗin CVD SiC tsari ne mai siffar siffar fuska, kuma yanayin haɓakar fim ɗin yana kusa da 100%
Silicon carbide (SiC) mai rufitushe shine mafi kyawun tushe don silicon crystal guda ɗaya da GaN epitaxy, wanda shine ainihin ɓangaren tanderun epitaxy. Tushen shine maɓalli na kayan haɓakawa don silicon monocrystalline don manyan da'irori masu haɗaka. Yana da babban tsafta, babban juriya na zafin jiki, juriya na lalata, ƙarancin iska mai kyau da sauran kyawawan halaye na kayan abu.
Samfurin aikace-aikace da amfani
Graphite tushe shafi don guda crystal silicon epitaxial growthDace ga Aixtron inji, da dai sauransuCoating kauri: 90 ~ 150umThe diamita na wafer crater ne 55mm.
Lokacin aikawa: Maris 14-2022