SiC Mai Rufin Graphite Halfmoon Partis a keybangaren da aka yi amfani da shi a cikin matakan masana'antu na semiconductor, musamman don kayan aikin SiC epitaxial.Muna amfani da fasahar mu ta haƙƙin mallaka don yin ɓangaren rabin watatsarki sosai,mai kyaushafidaidaitoda kyakkyawar rayuwar sabis, har dahigh sinadaran juriya da thermal kwanciyar hankali Properties.
Kudin hannun jari VET Energy daainihin manufacturer na musamman graphite da silicon carbide kayayyakin tare da CVD shafi,iya bayarwadaban-dabansassa na musamman don semiconductor da masana'antar hotovoltaic. OƘungiyar fasaha ta ur ta fito ne daga manyan cibiyoyin bincike na gida, za su iya samar da ƙarin ƙwararrun kayan aikina ka.
Muna ci gaba da haɓaka matakai na ci gaba don samar da ƙarin kayan haɓaka,kumasun yi aiki da keɓantaccen fasaha mai ƙima, wanda zai iya sa haɗin kai tsakanin sutura da abin da ke ƙasa ya fi ƙarfi kuma ƙasa da ƙasa don cirewa.
FAbincin samfuranmu:
1. High zafin jiki oxidation juriya har zuwa 1700℃.
2. Tsafta mai girma dathermal uniformity
3. Excellent lalata juriya: acid, alkali, gishiri da kuma Organic reagents.
4. Babban taurin, m surface, lafiya barbashi.
5. Tsawon rayuwar sabis kuma mafi dorewa
| CVD SiC薄膜基本物理性能 Asalin kaddarorin jiki na CVD SiCshafi | |
| 性质 / Dukiya | 典型数值 / Yawan Daraja |
| 晶体结构 / Tsarin Crystal | FCC β lokaci多晶，主要为（111) 取向 |
| 密度 / Yawan yawa | 3.21g/cm³ |
| 硬度 / Tauri | 2500 维氏硬度 (500g kaya) |
| 晶粒大小 / Hatsi SiZe | 2 ~ 10 μm |
| 纯度 / Sinadaran Tsabta | 99.99995% |
| 热容 / Ƙarfin zafi | 640kg-1· K-1 |
| 升华温度 / Sublimation Zazzabi | 2700 ℃ |
| 抗弯强度 / Ƙarfin Flexural | 415 MPa RT 4-point |
| 杨氏模量 / Matasa Modul | 430 Gpa 4pt lankwasa, 1300 ℃ |
| 导热系数 / ThermalGudanarwa | 300 w·m-1· K-1 |
| 热膨胀系数 / Fadada thermal (CTE) | 4.5×10-6K-1 |
Barka da zuwa ziyarci masana'antar mu, bari mu kara tattaunawa!
