I-SiC Coating/Coated Graphite Substrate/Ithreyi yeSemiconductor

I-SiC Coating/Coated Graphite Substrate/Ithreyi Yesithombe Esifakiwe Semiconductor

Incazelo emfushane:

I-VET Energy SiC Coated Graphite Susceptor ye-Epitaxial Growth iwumkhiqizo osebenza kahle kakhulu oklanyelwe ukunikeza ukusebenza okungaguquki nokuthembekile esikhathini eside. Inokumelana nokushisa okuhle kakhulu nokufana okushisayo, ukuhlanzeka okuphezulu, ukumelana nokuguguleka, okuyenza ibe yisixazululo esiphelele sezinhlelo zokusebenza zokucubungula ama-wafer.

Thumela i-imeyili kithi Landa njenge-PDF

Imininingwane Yomkhiqizo

Omaka bomkhiqizo

I-SiC enamathela/ehlanganiswe ne-Graphite susceptor ye-Semiconductor

II-SiC Coated Graphite Substrateiyisixazululo esihlala isikhathi eside nesisebenza ngempumelelo esiklanyelwe ukuhlangabezana nezidingo ezinzima zemboni yokucubungula i-semiconductor. Ifaka isendlalelo sokuhlanzeka okuphezului-silicon carbide (SiC) enamathela, le substrate iletha ukuzinza okungavamile kokushisa, ukumelana ne-oxidation, nempilo yesevisi ende, okuyenza ifaneleke ezinhlelweni zokusebenza zezinqubo ze-MOCVD, abathwali be-graphite wafer, nezinye izindawo ezishisa kakhulu.

Izici:
· I-Thermal Shock Resistance enhle kakhulu
· Ukumelana Nokushaqeka Okuhle Kakhulu Komzimba
· Excellent Chemical Resistance
· Super High Purity
· Ukutholakala kokuthi I-Complex Shape
·Isetshenziswa ngaphansi kwe-Oxidizing Atmosphere

Isicelo:

Izici zomkhiqizo kanye nezinzuzo:

1. I-Superior Thermal Resistance:Ngokuhlanzeka okuphezuluUkufakwa kwe-SiC, i-substrate imelana nezinga lokushisa elidlulele, iqinisekisa ukusebenza okungaguquguquki ezindaweni ezidinga kakhulu njenge-epitaxy ne-semiconductor fabrication.

2. Ukuqina Okuthuthukisiwe:Izingxenye zegraphite ezinamekwe nge-SiC ziklanyelwe ukumelana nokugqwala kwamakhemikhali kanye ne-oxidation, okwandisa isikhathi sokuphila se-substrate uma kuqhathaniswa nama-graphite substrates avamile.

3. I-Vitreous Coated Graphite:Isakhiwo esiyingqayizivele se-vitreous se-Ukufakwa kwe-SiCihlinzeka ngobulukhuni bobuso obuhle kakhulu, inciphisa ukuguga nokudabuka ngesikhathi sokucubungula izinga lokushisa eliphezulu.

4. High Purity SiC Coating:I-substrate yethu iqinisekisa ukungcola okuncane ezinqubweni ezibucayi ze-semiconductor, enikeza ukwethembeka ezimbonini ezidinga ubumsulwa bezinto eziqinile.

5. Isicelo se-Wide Market:II-SiC camera graphite susceptorimakethe iyaqhubeka nokukhula njengoba isidingo semikhiqizo ehlanganisiwe ye-SiC ethuthukisiwe ekukhiqizeni i-semiconductor sikhula, ibeka le substrate njengomdlali obalulekile kuzo zombili imakethe ye-graphite wafer carrier kanye nemakethe ye-silicon carbide coated graphite tray.

Izici Ezijwayelekile Ze-Base Graphite Material:

Ukuminyana Okubonakalayo:	1.85 g/cm3
Ukungazweli Kagesi:	11 μΩm
I-Flexural Strenth:	49 MPa (500kgf/cm2)
Ukuqina Kwasogwini:	58
Umlotha:	<5ppm
I-Thermal Conductivity:	116 W/mK (100 kcal/mhr-℃)

I-CVD SiC薄膜基本物理性能 Izakhiwo eziyisisekelo ze-CVD SiCenamathela
性质 / Isakhiwo	典型数值 / Inani Elijwayelekile
晶体结构 / Crystal Structure	I-FCC β phase 多晶，主要為(111）取向)
密度 / Ukuminyana	3.21 g/cm³
硬度 / Ukuqina	2500 维氏硬度 (500g umthwalo)
晶粒大小 / Grain SiZe	2 ~ 10μm
纯度 / Chemical Purity	99.99995%
热容 / Amandla Okushisa	640 J·kg^-1·K^-1
升华温度 / I-Sublimation Temperature	2700 ℃
抗弯强度 / Amandla e-Flexural	415 MPa RT 4-iphoyinti
杨氏模量 / Young's Modulus	430 Gpa 4pt ukugoba, 1300℃
导热系数 / Thermal Conductivity	300Wm^-1·K^-1
热膨胀系数 / Ukunwetshwa kwe-Thermal(CTE)	4.5×10^-6K^-1

I-VET Energy ingumkhiqizi wangempela wemikhiqizo eyenziwe ngokwezifiso ye-graphite ne-silicon carbide enezingubo ezihlukene ezifana ne-SiC coating, i-TaC coating, i-glassy carbon coating, i-pyrolytic carbon coating, njll., ingahlinzeka ngezingxenye ezihlukahlukene ezenziwe ngokwezifiso ze-semiconductor kanye nemboni ye-photovoltaic.

Ithimba lethu lezobuchwepheshe livela ezikhungweni eziphezulu zocwaningo lwasekhaya, lingakunikeza izixazululo zempahla echwepheshile.

Siyaqhubeka nokuthuthukisa izinqubo ezithuthukile ukuze sinikeze izinto ezithuthuke kakhulu, futhi senze ubuchwepheshe obukhethekile obunelungelo lobunikazi, obungenza ukuhlangana phakathi kokumboza ne-substrate kuqine futhi kungabi lula ukuhlukaniswa.

Siyakwamukela ngokufudumele ukuthi uvakashele ifekthri yethu, ake sibe nengxoxo eyengeziwe!