Izingxenye zeSemiconductor ezishibhile ezishibhile eziphezulu ezihlanzekile zeGraphite Semiconductor
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Isicelo: | Izingxenye zeSemiconductor |
Ukumelana (μΩ.m): | 8-10 ohm |
I-Porosity (%): | 12% Max |
Indawo Yomsuka: | I-Zhejiang, China |
Ubukhulu | Ngokwezifiso |
Zuza usayizi: | <=325mesh |
Isitifiketi: | ISO9001:2015 |
Usayizi Nomumo: | Ngokwezifiso |
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