I-SiC embozwe nge-Graphite substrate ye-Semiconductor,Amathreyi eGraphite,SicI-graphite epitaxy susceptors,
Ikhabhoni ihlinzeka ngama-susceptors, I-graphite epitaxy susceptors, I-Graphite Susceptors, Amathreyi eGraphite, I-SiC Epitaxy,
I-SiC Coated Graphite Carriers

Sigcina ukubekezelelana okuseduze kakhulu lapho sisebenzisa i-SiC coating, sisebenzisa ukunemba okuphezulu kwemishini ukuze siqinisekise iphrofayili ye-susceptor efanayo. Siphinde sikhiqize izinto ezinezakhiwo ezifanelekile zokumelana nogesi ukuze zisetshenziswe kumasistimu ashisayo ashisayo. Zonke izingxenye eziqediwe ziza nesitifiketi sokuhambisana nobumsulwa nesilinganiselo.

Inkampani yethu ihlinzeka ngezinsizakalo zenqubo yokuhlanganisa ye-SiC ngendlela ye-CVD ebusweni be-graphite, i-ceramics nezinye izinto, ukuze amagesi akhethekile aqukethe i-carbon ne-silicon aphendule ekushiseni okuphezulu ukuze athole ukuhlanzeka okuphezulu kwama-molecule e-SiC, ama-molecule afakwe ebusweni bezinto ezimboziwe, ukwakha isendlalelo sokuzivikela se-SIC. I-SIC eyakhiwe ihlanganiswe ngokuqinile nesisekelo se-graphite, inikeze isisekelo se-graphite izakhiwo ezikhethekile, ngaleyo ndlela yenza ubuso be-graphite compact, i-Porosity-free, ukumelana nokushisa okuphezulu, ukumelana nokugqwala kanye nokumelana ne-oxidation.

Inqubo ye-CVD iletha ukuhlanzeka okuphezulu kakhulu kanye nokuminyana kwethiyori ye-SiC enamathela ngaphandle kokuqina. Ngaphezu kwalokho, njengoba i-silicon carbide inzima kakhulu, ingapholishwa endaweni efana nesibuko. I-CVD silicon carbide (SiC) yokumboza ilethe izinzuzo ezimbalwa ezihlanganisa i-ultra-high purity surface kanye nokuqina okugqokwa ngokweqile. Njengoba imikhiqizo ehlanganisiwe isebenza kahle ku-vacuum ephezulu kanye nezimo zokushisa okuphezulu, ilungele ukusetshenziswa embonini ye-semiconductor nakwenye indawo ehlanzekile kakhulu. Siphinde sihlinzeke ngemikhiqizo ye-pyrolytic graphite (PG).

Izici eziyinhloko:

1. Ukumelana nokushisa okuphezulu kwe-oxidation:

ukumelana ne-oxidation kusekuhle kakhulu lapho izinga lokushisa liphezulu njenge-1600 C.

2. Ukuhlanzeka okuphezulu: okwenziwe yi-chemical vapor deposition ngaphansi kwesimo sokushisa okuphezulu kwe-chlorination.

3. Ukumelana nokuguguleka: ubulukhuni obuphezulu, indawo ehlangene, izinhlayiya ezinhle.

4. Ukumelana nokugqwala: i-asidi, i-alkali, usawoti kanye nama-organic reagents.

Ukucaciswa Okuyinhloko Kwezingubo Ze-CVD-SIC:

Isicelo: I-CVD silicon carbide coating isisetshenziswe ezimbonini ze-semiconductor kakade, njengethreyi ye-MOCVD, i-RTP ne-oxide etching chamber njengoba i-silicon nitride inokumelana nokushaqeka okukhulu okushisayo futhi ingakwazi ukumelana ne-plasma yamandla aphezulu.
-I-Silicon carbide isetshenziswa kabanzi ku-semiconductor kanye ne-coating.

Ikhono Lokuhlinzeka:

10000 Ucezu/Izingcezu Ngenyanga
Ukupakishwa Nokulethwa:
Ukupakisha:Ukupakisha Okujwayelekile & Okuqinile
Isikhwama sePoly + Ibhokisi + Ibhokisi + Iphalethi
Imbobo:
Ningbo/Shenzhen/Shanghai
Isikhathi esiholayo:

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