China Umkhiqizi SiC Coated Graphite MOCVD Epitaxy Susceptor

Umkhiqizi wase-China we-SiC Coated Graphite MOCVD Epitaxy Susceptor Isithombe Esifakiwe

Incazelo emfushane:

Ubumsulwa <5ppm
‣ Ukufana okuhle kwe-doping
‣ Ukuminyana okuphezulu nokunamathela
‣ I-anti-corrosive enhle kanye nokumelana nekhabhoni

‣ Ukwenza ngokwezifiso kochwepheshe
‣ Isikhathi esincane sokuhola
‣ Ukunikezwa okuzinzile
‣ Ukulawulwa kwekhwalithi nokuthuthukiswa okuqhubekayo

I-Epitaxy ye-GaN ku-Sapphire(RGB/Mini/Micro LED);
I-Epitaxy ye-GaN ku-Si Substrate(UVC);
I-Epitaxy ye-GaN ku-Si Substrate(Idivayisi ye-elekthronikhi);
I-Epitaxy ye-Si ku-Si Substrate(Isekethe ehlanganisiwe);
I-Epitaxy ye-SiC ku-SiC Substrate(I-substrate);
I-Epitaxy ye-InP ku-InP

Thumela i-imeyili kithi Landa njenge-PDF

Imininingwane Yomkhiqizo

Omaka bomkhiqizo

Ikhwalithi ephezulu ye-MOCVD Susceptor Thenga ku-inthanethi e-China

Iwafa idinga ukudlula ezinyathelweni ezimbalwa ngaphambi kokuba ilungele ukusetshenziswa emishinini kagesi. Inqubo eyodwa ebalulekile i-silicon epitaxy, lapho ama-wafers enziwa khona kuma-graphite susceptors. Izakhiwo kanye nekhwalithi ye-susceptors inomthelela obalulekile kukhwalithi ye-epitaxial layer ye-wafer.

Ngezigaba zokubekwa kwefilimu ezacile njenge-epitaxy noma i-MOCVD, i-VET ihlinzeka ngemishini ye-graphitee ye-ultra-pure esetshenziselwa ukusekela ama-substrates noma "ama-wafers". Emnyombweni wenqubo, le mishini, ama-epitaxy susceptors noma amapulatifomu esathelayithi e-MOCVD, aqala ngaphansi kwemvelo yokubeka:

Izinga lokushisa eliphezulu.
I-vacuum ephezulu.
Ukusetshenziswa kwezandulela zegesi ezinolaka.
Ukungcoliswa kweqanda, ukungabikho kokucwecwa.
Ukumelana nama-asidi aqinile ngesikhathi sokuhlanza

I-VET Energy ingumkhiqizi wangempela wemikhiqizo eyenziwe ngokwezifiso ye-graphite ne-silicon carbide ene-semiconductor kanye nemboni ye-photovoltaic. Ithimba lethu lezobuchwepheshe livela ezikhungweni eziphezulu zocwaningo lwasekhaya, lingakunikeza izixazululo zempahla echwepheshile.

Siyaqhubeka nokuthuthukisa izinqubo ezithuthukisiwe ukuze sinikeze izinto ezithuthuke kakhulu, futhi sisebenze ubuchwepheshe obukhethekile obunelungelo lobunikazi, obungenza ukuhlangana phakathi kokumboza ne-substrate kuqine futhi kungabi lula ukuhlukaniswa.

Izici zemikhiqizo yethu:

1. Ukumelana nokushisa okuphezulu kwe-oxidation kufika ku-1700 ℃.
2. Ukuhlanzeka okuphezulu nokufana okushisayo
3. Ukumelana nokugqwala okuhle kakhulu: i-asidi, i-alkali, usawoti kanye nama-organic reagents.
4. Ukuqina okuphezulu, indawo ehlangene, izinhlayiya ezinhle.
5. Impilo yesevisi ende futhi ihlala isikhathi eside

I-CVD SiC薄膜基本物理性能 Izakhiwo eziyisisekelo ze-CVD SiCenamathela
性质 / Impahla	典型数值 / Inani Elijwayelekile
晶体结构 / Isakhiwo seCrystal	I-FCC β isigaba多晶，主要為（111）取向
密度 / Ukuminyana	3.21 g/cm³
硬度 / Ukuqina	2500 维氏硬度 (500g umthwalo)
晶粒大小 / Uhlamvu SiZe	2 ~ 10μm
纯度 / Ukuhlanzeka Kwamakhemikhali	99.99995%
热容 / Amandla Okushisa	640 J·kg^-1·K^-1
升华温度 / I-Sublimation Temperature	2700 ℃
抗弯强度 / Amandla Aguquguqukayo	415 MPa RT 4-iphoyinti
杨氏模量 / I-Modulus Encane	430 Gpa 4pt ukugoba, 1300℃
导热系数 / ThermalI-Conductivity	300Wm^-1·K^-1
热膨胀系数 / Ukwandiswa Kokushisa (CTE)	4.5×10^-6K^-1