I-SiC ehlanganisa i-graphite MOCVD Wafer carriers, Graphite Susceptors ye-SiC Epitaxy

Incazelo emfushane:

 


  • Indawo Yomsuka:E-Zhejiang, China (Mainland)
  • Inombolo Yemodeli:Isikebhe3004
  • Ukwakhiwa Kwekhemikhali:I-graphite ehlanganiswe ne-SiC
  • Amandla e-Flexural:470Mpa
  • I-Thermal conductivity:300 W/mK
  • Ikhwalithi:Iphelele
  • Umsebenzi:I-CVD-SiC
  • Isicelo:I-Semiconductor / Photovoltaic
  • Ukuminyana:3.21 g/cc
  • Ukunwetshwa kwe-thermal:4 10-6/K
  • Umlotha: <5ppm
  • Isampula:Iyatholakala
  • Ikhodi ye-HS:6903100000
  • Imininingwane Yomkhiqizo

    Omaka bomkhiqizo

    SiC enamathela graphite MOCVD Wafer abathwali,I-Graphite Susceptorsye-SiC Epitaxy,
    Ikhabhoni ihlinzeka ngama-susceptors, ama-epitaxy susceptors, I-Graphite Susceptors,

    Incazelo Yomkhiqizo

    I-CVD-SiC enamathela inezici zesakhiwo esifanayo, izinto ezihlangene, ukumelana nokushisa okuphezulu, ukumelana ne-oxidation, ukuhlanzeka okuphezulu, ukumelana ne-asidi & alkali kanye ne-reagent ephilayo, enezakhiwo ezinzile ngokomzimba namakhemikhali.

    Uma kuqhathaniswa ne-high-purity graphite materials, i-graphite iqala ukufaka i-oxidize ku-400C, okuzobangela ukulahlekelwa kwempushana ngenxa ye-oxidation, okuholela ekungcoleni kwemvelo kumadivayisi we-peripheral kanye nama-vacuum chamber, futhi kwandise ukungcola kwemvelo ehlanzekile.

    Kodwa-ke, ukufakwa kwe-SiC kungagcina ukuzinza ngokomzimba namakhemikhali kumadigri ayi-1600, Kusetshenziswa kabanzi embonini yesimanje, ikakhulukazi embonini ye-semiconductor.

    Inkampani yethu ihlinzeka ngezinsizakalo zenqubo yokuhlanganisa ye-SiC ngendlela ye-CVD ebusweni be-graphite, i-ceramics nezinye izinto, ukuze amagesi akhethekile aqukethe i-carbon ne-silicon aphendule ekushiseni okuphezulu ukuze athole ukuhlanzeka okuphezulu kwama-molecule e-SiC, ama-molecule afakwe ebusweni bezinto ezimboziwe, ukwakha isendlalelo sokuzivikela se-SIC.I-SIC eyakhiwe ihlanganiswe ngokuqinile nesisekelo se-graphite, inikeze isisekelo se-graphite izakhiwo ezikhethekile, ngaleyo ndlela yenza ubuso be-graphite compact, i-Porosity-free, ukumelana nokushisa okuphezulu, ukumelana nokugqwala kanye nokumelana ne-oxidation.

    Isicelo:

    2

    Izici eziyinhloko:

    1. Ukumelana nokushisa okuphezulu kwe-oxidation:

    ukumelana ne-oxidation kusekuhle kakhulu lapho izinga lokushisa liphezulu njenge-1700 C.

    2. Ukuhlanzeka okuphezulu: okwenziwe yi-chemical vapor deposition ngaphansi kwesimo sokushisa okuphezulu kwe-chlorination.

    3. Ukumelana nokuguguleka: ubulukhuni obuphezulu, indawo ehlangene, izinhlayiya ezinhle.

    4. Ukumelana nokugqwala: i-asidi, i-alkali, usawoti kanye nama-organic reagents.

    Ukucaciswa Okuyinhloko Kwezingubo Ze-CVD-SIC:

    I-SiC-CVD

    Ukuminyana

    (g/cc)

    3.21

    Amandla e-Flexural

    (Mpa)

    470

    Ukunwetshwa kwe-thermal

    (10-6/K)

    4

    I-Thermal conductivity

    (W/mK)

    300

    Ikhono Lokuhlinzeka:

    10000 Ucezu/Izingcezu Ngenyanga
    Ukupakishwa Nokulethwa:
    Ukupakisha:Ukupakisha Okujwayelekile & Okuqinile
    Isikhwama sePoly + Ibhokisi + Ikhathoni + Iphalethi
    Imbobo:
    Ningbo/Shenzhen/Shanghai
    Isikhathi esiholayo:

    Ubuningi(Izingcezu) 1 - 1000 > 1000
    Est.Isikhathi(izinsuku) 15 Kuzoxoxiswana


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