I-PECVD Ilayisha Ithreyi yokubeka i-Graphite Tray

I-PECVD Ilayisha I-tray Deposition Graphite Tray Isithombe Esifakiwe

Incazelo emfushane:

Ithreyi yokulayisha i-PECVD ye-VET Energy iklanyelwe ukuhlinzeka ngokuvikelekile ngisho nokusekelwa kwamawafa ngesikhathi sokubekwa, ukuthuthukisa ukungaguquguquki kanye nekhwalithi yenqubo yokubeka. Ngokumelana nokushisa kwayo okuhle kakhulu, i-Graphite Tray isiza ukugcina indawo elawulwayo ngaphakathi kwamagumbi e-PECVD, inciphisa ingozi yokungcola kanye nokuqinisekisa ukusebenza kahle kwenqubo ephezulu.

Thumela i-imeyili kithi Landa njenge-PDF

Imininingwane Yomkhiqizo

Omaka bomkhiqizo

Ithreyi yokulayisha ye-VET Energy PECVD iyisithwali esinembayo esidizayinelwe inqubo ye-PECVD (i-plasma enhanced chemical vapor deposition). Leli threyi le-graphite lokubeka elisezingeni eliphezulu lenziwe ngezinto ezicwebezelayo, eziphakeme kakhulu. Inokumelana okuhle kakhulu nokushisa okuphezulu, ukumelana nokugqwala, ukuzinza kwe-dimensional nezinye izici. Inganikeza inkundla yenkampani yenethiwekhi ezinzile yenqubo ye-PECVD futhi iqinisekise ukufana nokucaba kokumiswa kwefilimu.

Amathreyi okulayisha e-VET Energy PECVD asetshenziswa kakhulu ku-semiconductor, photovoltaic, LED kanye neminye imikhakha. Ngokwesibonelo:

▪ I-Semiconductor: Inqubo ye-PECVD yezinto zokwakha ze-semiconductor njengama-silicon wafers nama-epitaxial wafers.

▪ I-Photovoltaic: Inqubo ye-PECVD yamafilimu amancane amaseli elanga.

▪ I-LED: Inqubo ye-PECVD yama-chips e-LED.

Izinzuzo Zomkhiqizo

▪Thuthukisa ikhwalithi yefilimu:Qinisekisa ukufakwa kwefilimu efanayo futhi uthuthukise ikhwalithi yefilimu.

▪Nweba impilo yesisetshenziswa:Ukumelana nokugqwala okuhle kakhulu, kwandisa impilo yesevisi yemishini ye-PECVD.

▪Yehlisa izindleko zokukhiqiza:Amathreyi e-graphite asezingeni eliphezulu anganciphisa izinga le-scrap futhi anciphise izindleko zokukhiqiza.

Izinto zegraphite ezivela ku-SGL:

Ipharamitha ejwayelekile: R6510
Inkomba	Izinga lokuhlola	Inani	Iyunithi
Usayizi wokusanhlamvu omaphakathi	ISO 13320	10	μm
Ukuminyana ngobuningi	I-DIN IEC 60413/204	1.83	g/cm³
I-porosity evulekile	I-DIN66133	10	%
Usayizi wembotshana ophakathi	I-DIN66133	1.8	μm
Ukuvumeleka	I-DIN 51935	0.06	cm²/s
Ukuqina kwe-Rockwell HR5/100	I-DIN IEC60413/303	90	HR
Ukumelana nogesi okuqondile	I-DIN IEC 60413/402	13	μΩm
Amandla e-Flexural	I-DIN IEC 60413/501	60	I-MPa
Amandla acindezelayo	I-DIN 51910	130	I-MPa
I-modulus yentsha	I-DIN 51915	11.5×10³	I-MPa
Ukunwetshwa kokushisa (20-200 ℃)	I-DIN 51909	4.2X10^-6	K^-1
I-Thermal conductivity (20 ℃)	I-DIN 51908	105	Wm^-1K^-1

Yakhelwe ngokukhethekile ukukhiqizwa kwamaseli elanga asebenza kahle kakhulu, asekela ukucutshungulwa kwe-wafer yosayizi omkhulu we-G12. Idizayini yenkampani yenethiwekhi ethuthukisiwe inyusa kakhulu ukusebenza, inika amandla amanani esivuno aphezulu kanye nezindleko zokukhiqiza eziphansi.

Into	Uhlobo	Inombolo yenethiwekhi ye-wafer
Isikebhe se-PEVCD Grephite - Uchungechunge lwe-156	156-13 grephite isikebhe	144
	156-19 grephite isikebhe	216
	156-21 grephite isikebhe	240
	156-23 graphite isikebhe	308
Isikebhe se-PEVCD Grephite - Uchungechunge lwe-125	125-15 grephite isikebhe	196
	125-19 grephite isikebhe	252
	125-21 isikebhe se-grphite	280