I-VET Energy Graphite Substrate Wafer Holder iyisiphathi esinembayo esidizayinelwe inqubo ye-PECVD (Plasma Enhanced Chemical Vapor Deposition). Lesi Sibambi Se-Graphite Substrate sekhwalithi ephezulu senziwe ngezinto ezicwebezelayo eziphakeme kakhulu, ezinokumelana nezinga lokushisa eliphakeme kakhulu, ukumelana nokugqwala, ukuzinza kwe-dimensional nezinye izici. Inganikeza inkundla yokweseka ezinzile yenqubo ye-PECVD futhi iqinisekise ukufana nokucaba kokumiswa kwefilimu.
Ithebula le-VET Energy PECVD lokusekela i-graphite wafer linezici ezilandelayo:
▪Ukuhlanzeka okuphezulu:okuqukethwe kokungcola okuphansi kakhulu, gwema ukungcoliswa kwefilimu, qinisekisa ikhwalithi yefilimu.
▪Ukuminyana okuphezulu:ukuminyana okuphezulu, amandla aphezulu emishini, angakwazi ukumelana nokushisa okuphezulu nokucindezela okuphezulu kwemvelo ye-PECVD.
▪Ukuzinza okuhle kwe-dimensional:ushintsho oluncane lwe-dimensional ekushiseni okuphezulu, okuqinisekisa ukuzinza kwenqubo.
▪I-thermal conductivity enhle kakhulu:dlulisa kahle ukushisa ukuze uvimbele ukushisisa kwe-wafer.
▪Ukumelana nokugqwala okuqinile:ingamelana nokuguguleka kwamagesi ahlukahlukene agqwalayo kanye ne-plasma.
▪Isevisi eyenziwe ngokwezifiso:amatafula okusekela ama-graphite anobukhulu obuhlukahlukene kanye nokuma kungenziwa ngokwezifiso ngokuya ngezidingo zamakhasimende.
Izinzuzo Zomkhiqizo
▪Thuthukisa ikhwalithi yefilimu:Qinisekisa ukufakwa kwefilimu efanayo futhi uthuthukise ikhwalithi yefilimu.
▪Nweba impilo yesisetshenziswa:Ukumelana nokugqwala okuhle kakhulu, kwandisa impilo yesevisi yemishini ye-PECVD.
▪Yehlisa izindleko zokukhiqiza:Amathreyi e-graphite asezingeni eliphezulu anganciphisa izinga le-scrap futhi anciphise izindleko zokukhiqiza.
Izinto zegraphite ezivela ku-SGL:
Ipharamitha ejwayelekile: R6510 | |||
Inkomba | Izinga lokuhlola | Inani | Iyunithi |
Usayizi wokusanhlamvu omaphakathi | ISO 13320 | 10 | μm |
Ukuminyana ngobuningi | I-DIN IEC 60413/204 | 1.83 | g/cm3 |
I-porosity evulekile | I-DIN66133 | 10 | % |
Usayizi wembotshana ophakathi | I-DIN66133 | 1.8 | μm |
Ukuvumeleka | I-DIN 51935 | 0.06 | cm²/s |
Ukuqina kwe-Rockwell HR5/100 | I-DIN IEC60413/303 | 90 | HR |
Ukumelana nogesi okuqondile | I-DIN IEC 60413/402 | 13 | μΩm |
Amandla e-Flexural | I-DIN IEC 60413/501 | 60 | I-MPa |
Amandla acindezelayo | I-DIN 51910 | 130 | I-MPa |
I-modulus yentsha | I-DIN 51915 | 11.5×10³ | I-MPa |
Ukunwetshwa kokushisa (20-200 ℃) | I-DIN 51909 | 4.2X10-6 | K-1 |
I-Thermal conductivity (20 ℃) | I-DIN 51908 | 105 | Wm-1K-1 |
Yakhelwe ngokukhethekile ukukhiqizwa kwamaseli elanga asebenza kahle kakhulu, asekela ukucutshungulwa kwe-wafer yosayizi omkhulu we-G12. Idizayini yenkampani yenethiwekhi ethuthukisiwe inyusa kakhulu ukusebenza, inika amandla amanani esivuno aphezulu kanye nezindleko zokukhiqiza eziphansi.
Into | Uhlobo | Inombolo yenethiwekhi ye-wafer |
Isikebhe se-PEVCD Grephite - Uchungechunge lwe-156 | 156-13 grephite isikebhe | 144 |
156-19 grephite isikebhe | 216 | |
156-21 grephite isikebhe | 240 | |
156-23 graphite isikebhe | 308 | |
Isikebhe se-PEVCD Grephite - Uchungechunge lwe-125 | 125-15 grephite isikebhe | 196 |
125-19 grephite isikebhe | 252 | |
125-21 isikebhe se-grphite | 280 |