Isikebhe se-silicon carbide crystal: isikhali esisha semboni ye-semiconductor

Ngokuthuthuka okuqhubekayo kwesayensi nobuchwepheshe, imboni ye-semiconductor inesidingo esandayo sezinto zokwakha ezisebenza kahle kakhulu, ezisebenza kahle kakhulu.Kulo mkhakha,isikebhe se-silicon carbide crystalsekuyiyona nto igxile kakhulu ezicini zayo eziyingqayizivele nezinkambu ezibanzi zohlelo lokusebenza.Leli phepha lizokwethula izinzuzo kanye nokusetshenziswa kwezikebhe ze-silicon carbide crystal embonini ye-semiconductor, futhi libonise indima yalo ebalulekile ekukhuthazeni ukuthuthukiswa kobuchwepheshe be-semiconductor.

Izinzuzo:
1.1 Izici zokushisa okuphezulu:Isikebhe se-silicon carbide crystalinokuqina okuhle kakhulu kwezinga lokushisa eliphezulu kanye ne-conductivity yokushisa, ingasebenza endaweni yokushisa ephezulu, futhi ingamelana nezinga lokushisa lokusebenza elingaphezu kwegumbi lokushisa.Lokhu kunikeza izikebhe ze-SIC inzuzo eyingqayizivele emandleni aphezulu kanye nezicelo zokushisa okuphezulu, njengama-electronics amandla, izimoto zikagesi kanye ne-aerospace.
1.2 Ukuhamba kwama-electron aphezulu: Ukuhamba kwe-electron yezikebhe ze-silicon carbide crystal kuphakeme kakhulu kunokwezinto ze-silicon zendabuko, okusho ukuthi kungafinyelela ukuminyana okuphezulu kwamanje kanye nokusetshenziswa kwamandla okuphansi.Lokhu kwenza isikebhe se-silicon carbide crystal sibe nethemba elibanzi lohlelo lokusebenza emkhakheni wefrikhwensi ephezulu, imishini yamandla aphezulu kagesi kanye nokuxhumana kwamafrikhwensi omsakazo.

1.3 Ukumelana nemisebe ephezulu: isikebhe se-silicon carbide crystal sinokumelana okuqinile emisebeni futhi singasebenza ngokuzinza endaweni yemisebe isikhathi eside.Lokhu kwenza izikebhe ze-SIC zibe wusizo emkhakheni we-nuclear, i-aerospace kanye nezokuvikela, lapho zinikeza khona izixazululo ezinokwethenjelwa kakhulu nezihlala isikhathi eside.

1.4 Izici zokushintsha ngokushesha: Ngenxa yokuthi isikebhe se-silicon carbide crystal sinokuhamba okuphezulu kwe-electron nokumelana okuphansi, singafinyelela isivinini sokushintsha ngokushesha kanye nokulahlekelwa kokushintsha okuphansi.Lokhu kwenza isikebhe se-silicon carbide sibe yinzuzo enkulu ekuguquleni amandla kagesi, ukudluliswa kwamandla kanye nezinhlelo zokushayela, ezingathuthukisa ukusebenza kahle kwamandla nokunciphisa ukulahleka kwamandla.

Izicelo:
2.1 Imishini kagesi enamandla amakhulu:izikebhe ze-silicon carbide crystalbabe nohlu olubanzi lwamathemba okufaka isicelo kuzinhlelo zokusebenza zamandla aphezulu, njengama-inverter ezimoto zikagesi, izinhlelo zokuphehla amandla elanga, abashayeli bezimoto zezimboni, njll. Ukuzinza kwabo kwezinga lokushisa eliphezulu nokuhamba kwama-electron aphezulu kuvumela lawa madivaysi ukuba afinyelele ukusebenza kahle okukhulu kanye namavolumu amancane. .
2.2 Isikhulisi samandla e-RF: Ukuhamba kwama-electron aphezulu kanye nezici ezilahlekayo eziphansi zezikebhe ze-silicon carbide crystal zizenza izinto ezilungele izikhulisamandla ze-RF.Izikhulisamandla ezinhlelweni zokuxhumana ze-RF, ama-radar nezinto zomsakazo zingathuthukisa ukuminyana kwamandla kanye nokusebenza kwesistimu ngokusebenzisa izikebhe ze-silicon carbide crystal.

2.3 Imishini ye-Optoelectronic: Izikebhe ze-silicon carbide crystal nazo zisetshenziswa kabanzi emkhakheni wemishini ye-optoelectronic.Ngenxa yokumelana kwayo nemisebe ephezulu nokuzinza okuphezulu kwezinga lokushisa, izikebhe ze-silicon carbide crystal zingasetshenziswa kuma-laser diode, ama-photodetectors kanye nezokuxhumana ze-fiber optic, ezihlinzeka ngezixazululo ezinokwethenjelwa kakhulu nezisebenza kahle.

2.4 Amadivayisi kagesi okushisa okuphezulu: Ukuzinza okuphezulu kwezinga lokushisa kwesikebhe se-silicon carbide crystal kukwenza kusetshenziswe kabanzi kumishini kagesi endaweni yokushisa ephezulu.Isibonelo, ukuqapha kwe-nuclear reactor emkhakheni wamandla enuzi, izinzwa zokushisa okuphezulu kanye nezinhlelo zokulawula injini emkhakheni we-aerospace.

Ngokufigqiwe:
Njengempahla entsha ye-semiconductor, isikebhe se-silicon carbide crystal sibonise izinzuzo eziningi kanye nezinkambu ezibanzi zokusetshenziswa embonini ye-semiconductor.Izici zayo zokushisa eziphakeme, ukuhamba kwe-electron ephezulu, ukumelana nemisebe ephezulu kanye nezici zokushintsha ngokushesha kuyenza ilungele amandla aphezulu, imvamisa ephezulu kanye nezicelo zokushisa okuphezulu.Kusukela kumishini kagesi enamandla amakhulu kuye kwezikhulisamandla ze-RF, kusukela kumishini ye-optoelectronic kuya kumishini kagesi enezinga lokushisa eliphezulu, uhla lokusetshenziswa kwemikhumbi ye-silicon carbide crystal luhlanganisa izinkambu eziningi, futhi lufake ubungqabavu obusha ekuthuthukisweni kobuchwepheshe be-semiconductor.Ngokuqhubeka okuqhubekayo kwezobuchwepheshe kanye nocwaningo olujulile, ithemba lokufaka isicelo sezikebhe ze-silicon carbide crystal embonini ye-semiconductor lizophinde linwetshwe, lisenze imishini ye-elekthronikhi esebenza kahle kakhulu, ethembekile futhi ethuthukisiwe.