SiC Wafer Boat/Tower

Incazelo emfushane:

Thumela i-imeyili kithi Landa njenge-PDF

Imininingwane Yomkhiqizo

Omaka bomkhiqizo

UmkhiqizoDukubhaliswa

I-Silicon carbide Wafer Boat isetshenziswa kabanzi njengesibambi esilucwecwana kwinqubo yokusabalalisa izinga lokushisa eliphezulu.

Izinzuzo:

Ukumelana nezinga lokushisa eliphezulu:ukusetshenziswa okuvamile ku-1800 ℃

High conductivity ezishisayo:elilingana ne-graphite material

Ukuqina okuphezulu:ubulukhuni okwesibili ngemuva kwedayimane, i-boron nitride

Ukumelana nokugqwala:i-asidi eqinile ne-alkali ayinayo ukugqwala kuyo, ukumelana nokugqwala kungcono kune-tungsten carbide ne-alumina.

Isisindo esincane:ukuminyana okuphansi, eduze ne-aluminium

Akukho deformation: i-coefficient ephansi yokwandisa okushisayo

Ukumelana nokushaqeka okushisayo:ingamelana nokushintsha kwezinga lokushisa okubukhali, imelane nokushaqeka kokushisa, futhi ibe nokusebenza okuzinzile

Izakhiwo Zomzimba ze-SiC

Impahla	Inani	Indlela
Ukuminyana	3.21 g/cc	Sink-float kanye nobukhulu
Ukushisa okuqondile	0.66 J/g °K	I-Pulsed laser flash
Amandla e-Flexural	450 MPa560 MPa	4 iphuzu ukugoba, RT4 iphuzu ukugoba, 1300°
Ukuqina kokuphuka	2.94 MPa m1/2	I-Microindentation
Ukuqina	2800	Vicker, 500g umthwalo
I-Elastic ModulusYoung's Modulus	450 GPA430 GPA	4 pt ukugoba, RT4 pt ukugoba, 1300 °C
Usayizi wokusanhlamvu	2 - 10 µm	I-SEM

Izakhiwo ezishisayo ze-SiC

I-Thermal Conductivity	250 W/m °K	Indlela ye-Laser flash, RT
I-Thermal Expansion (CTE)	4.5 x 10-6 °K	Izinga lokushisa legumbi liye ku-950 °C, i-silica dilatometer