I-Monocrystalline 8 Inch Silicon Wafer evela ku-VET Energy iyisixazululo esihamba phambili embonini sokwenziwa kwe-semiconductor kanye nemishini kagesi. Inikeza ubumsulwa obuphakeme nesakhiwo sekristalu, lawa mawafa alungele izinhlelo zokusebenza ezisebenza kahle kuzo zombili izimboni ze-photovoltaic kanye ne-semiconductor. I-VET Energy iqinisekisa ukuthi yonke i-wafer icutshungulwa ngokucophelela ukuze ihlangabezane nezindinganiso eziphakeme kakhulu, ihlinzeka ngokufana okuhle kakhulu kanye nokuqedwa okubushelelezi, okubalulekile ekukhiqizeni idivayisi ye-elekthronikhi ethuthukisiwe.
Lawa ma-Monocrystalline 8 Inch Silicon Wafers ahambisana nohlu lwezinto zokwakha, okuhlanganisa i-Si Wafer, i-SiC Substrate, i-SOI Wafer, i-SiN Substrate, futhi ifaneleka ngokukhethekile ukukhula kwe-Epi Wafer. I-conductivity yabo ephezulu yokushisa kanye nezakhiwo zikagesi zibenza babe ukukhetha okuthembekile kokukhiqiza okuphezulu. Ukwengeza, lawa mawafa aklanyelwe ukusebenza ngaphandle komthungo ngezinto ezifana ne-Gallium Oxide Ga2O3 kanye ne-AlN Wafer, enikeza inhlobonhlobo yezinhlelo zokusebenza kusukela kugesi wamandla kuya kumadivayisi e-RF. Amawafa nawo angena kahle ezinhlelweni zekhasethi zevolumu ephezulu, izindawo zokukhiqiza ezizenzakalelayo.
Ulayini womkhiqizo we-VET Energy awukhawulelwe kumawafa e-silicon. Siphinde futhi sinikeze ngezinhlobonhlobo zezinto ezisetshenziswayo ze-semiconductor substrate, okuhlanganisa i-SiC Substrate, i-SOI Wafer, i-SiN Substrate, i-Epi Wafer, njll., kanye nezinto ezintsha ze-bandgap semiconductor ezintsha ezifana ne-Gallium Oxide Ga2O3 ne-AlN Wafer. Le mikhiqizo ingahlangabezana nezidingo zohlelo lokusebenza zamakhasimende ahlukene kugesi wamandla, imvamisa yomsakazo, izinzwa kanye neminye imikhakha.
I-VET Energy ihlinzeka amakhasimende ngezixazululo ezenziwe ngezifiso ze-wafer. Singakwazi ukwenza ngokwezifiso ama-wafers ane-resistivity ehlukene, okuqukethwe komoya-mpilo, ukujiya, njll. ngokuya ngezidingo ezithile zamakhasimende. Ngaphezu kwalokho, siphinde sinikeze ukwesekwa kwezobuchwepheshe kanye nesevisi yangemuva kokuthengisa ukuze sisize amakhasimende axazulule izinkinga ezihlukahlukene okuhlangatshezwane nazo phakathi nenqubo yokukhiqiza.
IMICIMBI YOKUFAKA
*n-Pm=n-type Pm-Grade,n-Ps=n-type Ps-Grade,Sl=Semi-lnsulation
Into | 8-Intshi | 6-Intshi | 4-Intshi | ||
nP | n-Pm | n-IHu | SI | SI | |
I-TTV(GBIR) | ≤6um | ≤6um | |||
Umnsalo(GF3YFCD)-Inani Eliphelele | ≤15μm | ≤15μm | ≤25μm | ≤15μm | |
I-Warp(GF3YFER) | ≤25μm | ≤25μm | ≤40μm | ≤25μm | |
I-LTV(SBIR)-10mmx10mm | <2μm | ||||
I-Wafer Edge | Beveling |
UBUHLUNGU QEDA
*n-Pm=n-type Pm-Grade,n-Ps=n-type Ps-Grade,Sl=Semi-lnsulation
Into | 8-Intshi | 6-Intshi | 4-Intshi | ||
nP | n-Pm | n-IHu | SI | SI | |
I-Surface Qeda | I-Double side Optical Polish, i-Si- Face CMP | ||||
I-SurfaceRoughness | (10um x 10um) I-Si-FaceRa≤0.2nm | (5umx5um) I-Si-Face Ra≤0.2nm | |||
Ama-Edge Chips | Akukho okuvunyelwe (ubude nobubanzi≥0.5mm) | ||||
Izindebe | Akukho Okuvunyelwe | ||||
Imihuzuko(Si-Face) | Ubuningi.≤5,Okuqongelelwe | Ubuningi.≤5,Okuqongelelwe | Ubuningi.≤5,Okuqongelelwe | ||
Imifantu | Akukho Okuvunyelwe | ||||
Ukukhishwa komkhawulo | 3mm |