I-Monocrystalline 8 Intshi yeSilicon Wafer

Incazelo emfushane:

I-VET Energy single crystal 8-inch silicon wafer iwukuhlanzeka okuphezulu, okuseqophelweni eliphezulu kwe-semiconductor base material. I-VET Energy isebenzisa inqubo ethuthukisiwe yokukhula ye-CZ ukuze kuqinisekiswe ukuthi isicwecwe sinekhwalithi enhle kakhulu yekristalu, ukuminyana okunesici esiphansi kanye nokufana okuphezulu, ukuhlinzeka ngendawo engaphansi eqinile nethembekile yamadivayisi akho e-semiconductor.


Imininingwane Yomkhiqizo

Omaka bomkhiqizo

I-Monocrystalline 8 Inch Silicon Wafer evela ku-VET Energy iyisixazululo esihamba phambili embonini sokwenziwa kwe-semiconductor kanye nemishini kagesi. Inikeza ubumsulwa obuphakeme nesakhiwo sekristalu, lawa mawafa alungele izinhlelo zokusebenza ezisebenza kahle kuzo zombili izimboni ze-photovoltaic kanye ne-semiconductor. I-VET Energy iqinisekisa ukuthi yonke i-wafer icutshungulwa ngokucophelela ukuze ihlangabezane nezindinganiso eziphakeme kakhulu, ihlinzeka ngokufana okuhle kakhulu kanye nokuqedwa okubushelelezi, okubalulekile ekukhiqizeni idivayisi ye-elekthronikhi ethuthukisiwe.

Lawa ma-Monocrystalline 8 Inch Silicon Wafers ahambisana nohlu lwezinto zokwakha, okuhlanganisa i-Si Wafer, i-SiC Substrate, i-SOI Wafer, i-SiN Substrate, futhi ifaneleka ngokukhethekile ukukhula kwe-Epi Wafer. I-conductivity yabo ephezulu yokushisa kanye nezakhiwo zikagesi zibenza babe ukukhetha okuthembekile kokukhiqiza okuphezulu. Ukwengeza, lawa mawafa aklanyelwe ukusebenza ngaphandle komthungo ngezinto ezifana ne-Gallium Oxide Ga2O3 kanye ne-AlN Wafer, enikeza inhlobonhlobo yezinhlelo zokusebenza kusukela kugesi wamandla kuya kumadivayisi e-RF. Amawafa nawo angena kahle ezinhlelweni zekhasethi zevolumu ephezulu, izindawo zokukhiqiza ezizenzakalelayo.

Ulayini womkhiqizo we-VET Energy awukhawulelwe kumawafa e-silicon. Siphinde futhi sinikeze ngezinhlobonhlobo zezinto ezisetshenziswayo ze-semiconductor substrate, okuhlanganisa i-SiC Substrate, i-SOI Wafer, i-SiN Substrate, i-Epi Wafer, njll., kanye nezinto ezintsha ze-bandgap semiconductor ezintsha ezifana ne-Gallium Oxide Ga2O3 ne-AlN Wafer. Le mikhiqizo ingahlangabezana nezidingo zohlelo lokusebenza zamakhasimende ahlukene kugesi wamandla, imvamisa yomsakazo, izinzwa kanye neminye imikhakha.

I-VET Energy ihlinzeka amakhasimende ngezixazululo ezenziwe ngezifiso ze-wafer. Singakwazi ukwenza ngokwezifiso ama-wafers ane-resistivity ehlukene, okuqukethwe komoya-mpilo, ukujiya, njll. ngokuya ngezidingo ezithile zamakhasimende. Ngaphezu kwalokho, siphinde sinikeze ukwesekwa kwezobuchwepheshe kanye nesevisi yangemuva kokuthengisa ukuze sisize amakhasimende axazulule izinkinga ezihlukahlukene okuhlangatshezwane nazo phakathi nenqubo yokukhiqiza.

Ikhasi 6-36
Ikhasi 6-35

IMICIMBI YOKUFAKA

*n-Pm=n-type Pm-Grade,n-Ps=n-type Ps-Grade,Sl=Semi-lnsulation

Into

8-Intshi

6-Intshi

4-Intshi

nP

n-Pm

n-IHu

SI

SI

I-TTV(GBIR)

≤6um

≤6um

Umnsalo(GF3YFCD)-Inani Eliphelele

≤15μm

≤15μm

≤25μm

≤15μm

I-Warp(GF3YFER)

≤25μm

≤25μm

≤40μm

≤25μm

I-LTV(SBIR)-10mmx10mm

<2μm

I-Wafer Edge

Beveling

UBUHLUNGU QEDA

*n-Pm=n-type Pm-Grade,n-Ps=n-type Ps-Grade,Sl=Semi-lnsulation

Into

8-Intshi

6-Intshi

4-Intshi

nP

n-Pm

n-IHu

SI

SI

I-Surface Qeda

I-Double side Optical Polish, i-Si- Face CMP

I-SurfaceRoughness

(10um x 10um) I-Si-FaceRa≤0.2nm
I-C-Face Ra≤ 0.5nm

(5umx5um) I-Si-Face Ra≤0.2nm
I-C-Face Ra≤0.5nm

Ama-Edge Chips

Akukho okuvunyelwe (ubude nobubanzi≥0.5mm)

Izindebe

Akukho Okuvunyelwe

Imihuzuko(Si-Face)

Ubuningi.≤5,Okuqongelelwe
Ubude≤0.5× ububanzi bewafa

Ubuningi.≤5,Okuqongelelwe
Ubude≤0.5× ububanzi bewafa

Ubuningi.≤5,Okuqongelelwe
Ubude≤0.5× ububanzi bewafa

Imifantu

Akukho Okuvunyelwe

Ukukhishwa komkhawulo

3mm

tech_1_2_size
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