I-Graphite Carrier yenqubo ye-PECVD

Incazelo emfushane:

Amandla we-VETI-PECVD Graphite Boat for Solar Panel iyingxenye ethuthukisiwe eklanyelwe ngokukhethekile ukukhiqizwa kwamaphaneli elanga asebenza kahle kakhulu. Isetshenziswa ezinqubweni ze-Plasma Enhanced Chemical Vapor Deposition (PECVD), lesi sikebhe se-graphite siqinisekisa ukuphathwa kahle kwezinto kanye nokufakwa okufanayo kwamafilimu amancane kumaseli elanga. Iklanyelwe ukunemba nokuqina, inikeza ukuqhutshwa kokushisa okuphezulu, ukumelana nokugqwala okuphezulu, nokungcoliswa okuncane, okubalulekile ekukhiqizeni amaphaneli elanga asebenza kahle, aphezulu.

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Imininingwane Yomkhiqizo

Omaka bomkhiqizo

Amandla we-VETI-PECVD process graphite carrier iyikhwalithi ephezulu esebenzisekayo eqondiswe ku-PECVD (i-plasma enhanced chemical vapor deposition) inqubo. Lesi sithwali se-graphite senziwe nge-high-purity, high-density graphite material, enokumelana okuhle kakhulu nokushisa okuphezulu, ukumelana nokugqwala, ukuzinza kwe-dimensional kanye nezinye izici, inganikeza isiteji esithwala esizinzile senqubo ye-PECVD, ukuqinisekisa ukufana nokuvuleka kwefilimu encane. ukubeka.

Abathwali be-graphite benqubo ye-PECVD banezici ezilandelayo:

▪ Ukuhlanzeka okuphezulu: okuqukethwe ukungcola okuphansi kakhulu, ukugwema ukungcoliswa kwefilimu nokuqinisekisa ikhwalithi yefilimu.

▪ Ukuminyana okuphezulu: ukuminyana okuphezulu, amandla aphezulu emishini, ekwazi ukumelana nokushisa okuphezulu kanye ne-high pressure ye-PECVD imvelo.

▪ Ukuzinza okuhle kwe-dimensional: ukuguquka kwe-dimensional encane ekushiseni okuphezulu, okuqinisekisa ukuzinza kwenqubo.

▪ I-thermal conductivity enhle kakhulu: dlulisa kahle ukushisa ukuze uvimbele ukushisisa kwe-wafer.

▪ Ukumelana nokugqwala okuqinile: ikwazi ukumelana nokuguguleka kwamagesi agqwalayo ahlukahlukene kanye ne-plasma.

▪ Isevisi eyenziwe ngokwezifiso: abathwali be-graphite abanobukhulu obuhlukahlukene kanye nokuma kungenziwa ngokwezifiso ngokwezidingo zamakhasimende.

Izinto zegraphite ezivela ku-SGL:

Ipharamitha ejwayelekile: R6510
Inkomba	Izinga lokuhlola	Inani	Iyunithi
Usayizi wokusanhlamvu omaphakathi	ISO 13320	10	μm
Ukuminyana ngobuningi	I-DIN IEC 60413/204	1.83	g/cm³
I-porosity evulekile	I-DIN66133	10	%
Usayizi wembotshana ophakathi	I-DIN66133	1.8	μm
Ukuvumeleka	I-DIN 51935	0.06	cm²/s
Ukuqina kwe-Rockwell HR5/100	I-DIN IEC60413/303	90	HR
Ukumelana nogesi okuqondile	I-DIN IEC 60413/402	13	μΩm
Amandla e-Flexural	I-DIN IEC 60413/501	60	I-MPa
Amandla acindezelayo	I-DIN 51910	130	I-MPa
I-modulus yentsha	I-DIN 51915	11.5×10³	I-MPa
Ukunwetshwa kokushisa (20-200 ℃)	I-DIN 51909	4.2X10^-6	K^-1
I-Thermal conductivity (20 ℃)	I-DIN 51908	105	Wm^-1K^-1

Yakhelwe ngokukhethekile ukukhiqizwa kwamaseli elanga asebenza kahle kakhulu, asekela ukucutshungulwa kwe-wafer yosayizi omkhulu we-G12. Idizayini yenkampani yenethiwekhi ethuthukisiwe inyusa kakhulu ukusebenza, inika amandla amanani esivuno aphezulu kanye nezindleko zokukhiqiza eziphansi.

Into	Uhlobo	Inombolo yenethiwekhi ye-wafer
Isikebhe se-PEVCD Grephite - Uchungechunge lwe-156	156-13 grephite isikebhe	144
	156-19 grephite isikebhe	216
	156-21 grephite isikebhe	240
	156-23 graphite isikebhe	308
Isikebhe se-PEVCD Grephite - Uchungechunge lwe-125	125-15 grephite isikebhe	196
	125-19 grephite isikebhe	252
	125-21 isikebhe se-grphite	280