I-AdvancedI-SiC Cantilever Paddleye-Wafer Processing eyenziwe yi-vet-china inikeza isisombululo esihle kakhulu sokukhiqiza i-semiconductor. Lesi sigwedlo se-cantilever senziwe ngezinto ze-SiC (silicon carbide), futhi ubulukhuni baso obuphezulu nokumelana nokushisa kuyenza ikwazi ukulondoloza ukusebenza okuhle kakhulu endaweni eshisa izikhotha nezimo ezonakalisayo. Idizayini ye-Cantilever Paddle ivumela i-wafer ukuthi isekelwe ngokuthembekile ngesikhathi sokucutshungulwa, ukunciphisa ubungozi bokuhlukaniswa nokulimala.
I-SiC Cantilever Paddleiyisakhi esikhethekile esisetshenziswa emishinini yokukhiqiza ye-semiconductor efana nesithando somlilo se-oxidation, isithando somlilo esisakazwayo, nesithando somlilo esishisayo, ukusetshenziswa okuyinhloko ukulayisha nokuthulula i-wafer, isekela kanye nokuthutha ama-wafers ngesikhathi sezinqubo zokushisa okuphezulu.
Izakhiwo ezivamilekweI-SiCci-antileverphlanganisa: isakhiwo se-cantilever, esimiswe ekugcineni kwesinye futhi sikhululekile kwenye, ngokuvamile sinomklamo oyisicaba futhi ofana nokugwedla.
I-VET Energy isebenzisa izinto zokuhlanzeka eziphakeme ze-silicon carbide ukuqinisekisa ikhwalithi.
Izakhiwo ezibonakalayo ze-Recrystallized Silicon Carbide | |
Impahla | Inani Elijwayelekile |
Izinga lokushisa lokusebenza (°C) | 1600°C (nomoya-mpilo), 1700°C (ukunciphisa imvelo) |
Okuqukethwe kwe-SiC | > 99.96% |
Mahhala Si okuqukethwe | < 0.1% |
Ukuminyana ngobuningi | 2.60-2.70 g/cm3 |
I-porosity ebonakalayo | < 16% |
Amandla okucindezela | > 600I-MPa |
Amandla okugoba abandayo | 80-90 MPa (20°C) |
Amandla okugoba ashisayo | 90-100 MPa (1400°C) |
Ukunwetshwa kwe-Thermal @1500°C | 4.70 10-6/°C |
I-Thermal conductivity @1200°C | 23W/m•K |
I-Elastic module | 240 GPA |
Ukumelana nokushaqeka okushisayo | Kuhle ngokwedlulele |
Izinzuzo ze-VET Energy's Advanced SiC Cantilever Paddle for Wafer Processing yilezi:
-Ukuzinza okuphezulu kwezinga lokushisa: kuyasebenziseka ezindaweni ezingaphezu kuka-1600 ° C;
-I-coefficient yokwandisa okushisayo ephansi: igcina ukuzinza kwe-dimensional, inciphisa ingozi ye-wafer warpage;
-Ukuhlanzeka okuphezulu: ingozi ephansi yokungcola kwensimbi;
-Ukungabi namandla kwamakhemikhali: ukumelana nokugqwala, kufanelekile ezindaweni ezihlukahlukene zegesi;
-Amandla aphezulu nobulukhuni: Ukungagugi, impilo ende yesevisi;
-I-thermal conductivity enhle: isiza ekushiseni kwe-wafer efanayo.