Ohun alumọni Carbide (SiC) Epitaxial Wafer

Silicon Carbide (SiC) Epitaxial Wafer Ifihan Aworan

Apejuwe kukuru:

Silicon Carbide (SiC) Epitaxial Wafer lati VET Energy jẹ sobusitireti iṣẹ ṣiṣe giga ti a ṣe apẹrẹ lati pade awọn ibeere ibeere ti agbara iran atẹle ati awọn ẹrọ RF. Agbara VET ṣe idaniloju pe wafer epitaxial kọọkan jẹ iṣelọpọ ni itara lati pese ina elekitiriki ti o ga julọ, foliteji fifọ, ati gbigbe gbigbe, ti o jẹ ki o jẹ apẹrẹ fun awọn ohun elo bii awọn ọkọ ina, ibaraẹnisọrọ 5G, ati ẹrọ itanna agbara ṣiṣe giga.

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Alaye ọja

ọja Tags

VET Energy silikoni carbide (SiC) epitaxial wafer jẹ iṣẹ-giga jakejado bandgap semikondokito ohun elo pẹlu iwọn otutu giga ti o dara julọ, igbohunsafẹfẹ giga ati awọn abuda agbara giga. O jẹ sobusitireti pipe fun iran tuntun ti awọn ẹrọ itanna agbara. Agbara VET nlo imọ-ẹrọ epitaxial MOCVD to ti ni ilọsiwaju lati dagba awọn ipele SiC epitaxial didara giga lori awọn sobusitireti SiC, ni idaniloju iṣẹ ṣiṣe to dara julọ ati aitasera ti wafer.

Silicon Carbide (SiC) Wafer Epitaxial nfunni ni ibamu ti o dara julọ pẹlu ọpọlọpọ awọn ohun elo semikondokito pẹlu Si Wafer, SiC Substrate, SOI Wafer, ati SiN Substrate. Pẹlu Layer epitaxial ti o lagbara, o ṣe atilẹyin awọn ilana ti ilọsiwaju gẹgẹbi idagbasoke Epi Wafer ati isọpọ pẹlu awọn ohun elo bi Gallium Oxide Ga2O3 ati AlN Wafer, ni idaniloju lilo ti o wapọ kọja awọn imọ-ẹrọ ọtọtọ. Ti a ṣe apẹrẹ lati ni ibamu pẹlu awọn ọna ṣiṣe mimu kasẹti ti ile-iṣẹ, o ṣe idaniloju awọn iṣẹ ṣiṣe ti o munadoko ati ṣiṣan ni awọn agbegbe iṣelọpọ semikondokito.

Laini ọja VET Energy ko ni opin si awọn wafers epitaxial SiC. A tun pese ọpọlọpọ awọn ohun elo sobusitireti semikondokito, pẹlu Si Wafer, SiC Substrate, SOI Wafer, SiN Substrate, Epi Wafer, bbl Ni afikun, a tun n ṣiṣẹ lọwọ ni idagbasoke awọn ohun elo semikondokito jakejado bandgap tuntun, gẹgẹ bi Gallium Oxide Ga2O3 ati AlN Wafer, lati pade ibeere ile-iṣẹ eletiriki agbara iwaju fun awọn ẹrọ iṣẹ ṣiṣe ti o ga julọ.

WAFERING ni pato

*n-Pm=n-iru Pm-Grade,n-Ps=n-iru Ps-Grade,Sl=Ogbede-lnsulating

Nkan	8-inch	6-inch			4-inch
Nkan	nP	n-Pm	n-Ps	SI	SI
TTV(GBIR)	≤6um	≤6um
Teriba(GF3YFCD) -Iye pipe	≤15μm	≤15μm	≤25μm		≤15μm
Warp(GF3YFER)	≤25μm	≤25μm	≤40μm		≤25μm
LTV (SBIR) -10mmx10mm	<2μm
Wafer eti	Beveling

Ipari dada

*n-Pm=n-iru Pm-Grade,n-Ps=n-iru Ps-Grade,Sl=Ogbede-lnsulating

Nkan	8-inch	6-inch			4-inch
	nP	n-Pm	n-Ps	SI	SI
Dada Ipari	Polish Optical ẹgbẹ meji, Si- Face CMP
SurfaceRoughness	(10um x 10um) Si-FaceRa≤0.2nm C-Oju Ra≤ 0.5nm			(5umx5um) Si-Face Ra≤0.2nm C-Oju Ra≤0.5nm
Awọn eerun eti	Ko si Gbigbanilaaye (ipari ati iwọn≥0.5mm)
Indents	Ko Si Iyọọda
Awọn idọti (Si-Face)	Qty.≤5, Akopọ Ipari≤0.5× wafer opin	Qty.≤5, Akopọ Ipari≤0.5× wafer opin			Qty.≤5, Akopọ Ipari≤0.5× wafer opin
Awọn dojuijako	Ko Si Iyọọda
Iyasoto eti	3mm