SiC ti a bo lẹẹdi MOCVD Wafer awọn gbigbe,Lẹẹdi Susceptorsfun SiC epitaxy,
Erogba n pese awọn alailagbara, EPITAXY ATI MOCVD, epitaxy susceptors, Lẹẹdi n pese awọn alailagbara, Lẹẹdi Susceptors, Lẹẹdi Trays,

CVD-SiC ti a bo ni awọn abuda ti ẹya aṣọ, ohun elo iwapọ, resistance otutu otutu, resistance ifoyina, mimọ giga, acid&alkali resistance ati reagent Organic, pẹlu awọn ohun-ini iduroṣinṣin ati awọn ohun-ini kemikali.

Ti a bawe pẹlu awọn ohun elo graphite mimọ-giga, graphite bẹrẹ lati oxidize ni 400C, eyiti yoo fa isonu ti lulú nitori ifoyina, ti o mu ki idoti ayika si awọn ẹrọ agbeegbe ati awọn iyẹwu igbale, ati mu awọn impurities ti agbegbe mimọ-giga.

Sibẹsibẹ, ibora SiC le ṣetọju iduroṣinṣin ti ara ati kemikali ni awọn iwọn 1600, O jẹ lilo pupọ ni ile-iṣẹ ode oni, paapaa ni ile-iṣẹ semikondokito.

Ile-iṣẹ wa pese awọn iṣẹ ilana ibora SiC nipasẹ ọna CVD lori oju ti graphite, awọn ohun elo amọ ati awọn ohun elo miiran, nitorinaa awọn gaasi pataki ti o ni erogba ati ohun alumọni fesi ni iwọn otutu giga lati gba awọn ohun elo SiC mimọ giga, awọn ohun elo ti a fi silẹ lori oju awọn ohun elo ti a bo, lara SIC aabo Layer. SIC ti a ṣe ni ifaramọ si ipilẹ graphite, fifun ipilẹ graphite awọn ohun-ini pataki, nitorinaa ṣiṣe dada ti iwapọ graphite, Porosity-free, resistance otutu otutu, ipata ipata ati resistance ifoyina.

Ohun elo:

Awọn ẹya akọkọ:

1. Idaabobo ifoyina otutu otutu:

resistance ifoyina tun dara pupọ nigbati iwọn otutu ba ga to 1700 C.

2. Iwa mimọ to gaju: ti a ṣe nipasẹ ifasilẹ ọru kemikali labẹ ipo chlorination otutu otutu.

3. Ogbara resistance: ga líle, iwapọ dada, itanran patikulu.

4. Ipata resistance: acid, alkali, iyo ati Organic reagents.

Awọn pato pataki ti CVD-SIC Awọn aso:

Agbara Ipese:

10000 Nkan / Awọn nkan fun oṣu kan
Iṣakojọpọ & Ifijiṣẹ:
Iṣakojọpọ: Standard & Iṣakojọpọ Alagbara
Poly apo + apoti + paali + pallet
Ibudo:
Ningbo / Shenzhen / Shanghai
Akoko asiwaju: