Sintered silicon carbide Sic crystal / isikhephe esisicaba

Inkcazelo emfutshane:

I-Sintered Silicon Carbide yethu (i-SiC) i-Crystal / Wafer Boat yenzelwe ukuchaneka kwimveliso ye-semiconductor. Ngozinzo olukhethekileyo lwe-thermal, ukumelana neekhemikhali, kunye namandla omatshini, esi sikhephe siqinisekisa ukuthuthwa okukhuselekileyo kunye nokufanelekileyo kweekristale kunye nama-wafers ngokusebenzisa iinkqubo eziphezulu zokushisa.


Iinkcukacha zeMveliso

Iithegi zeMveliso

AbaSinteredI-Silicon Carbide (SiC)Ikristale/Isikhephe esisicabayenzelwe iimfuno ezingqongqo zesemiconductor kunye ne-microelectronics industry. Ibonelela ngeqonga elikhuselekileyo lokuphatha iikristale zesilicon kunye neewafers ngexesha lokusetyenzwa kobushushu obuphezulu, ukuqinisekisa ukuba ingqibelelo yabo kunye nobunyulu bugcinwa kulo lonke.

Ezona mpawu

  1. Uzinzo olubalaseleyo lweThermal: Iyakwazi ukunyamezela ukushisa ukuya kwi-1600 ° C, ilungele iinkqubo ezifuna ulawulo oluchanekileyo lwe-thermal.
  2. Ukumelana neMichiza ePhezulu: Ukumelana neekhemikhali ezininzi ezonakalisayo kunye neegesi, ezibonelela ngokuzinzileyo kwiindawo ezisebenza nzima.
  3. Amandla oomatshini aqinileyo: Ukugcina ingqibelelo yesakhiwo phantsi koxinzelelo oluphezulu, ukunciphisa amathuba okuba nokuguqulwa okanye ukuphuka.
  4. Ukwandiswa kweThermal encinci: Yenzelwe ukunciphisa umngcipheko wokothuka kwe-thermal kunye nokuqhekeka, ukunika ukusebenza okuthembekileyo kusetyenziso olwandisiweyo.
  5. Uveliso oluchanekileyo: Yenziwe ngokuchaneka okuphezulu ukuhlangabezana neemfuno ezithile zenkqubo kunye nokwamkela ubungakanani obahlukeneyo bekristale kunye nobukhulu bewafer.

Usetyenziso

• Ukusetyenzwa kwe-wafer ye-semiconductor

• Ukwenziwa kwe-LED

• Ukuveliswa kweeseli ze-Photovoltaic

• Iinkqubo zokubeka umphunga kwikhemikhali (CVD).

• Uphando nophuhliso kwinzululwazi yezinto eziphathekayo

烧结碳化硅物理特性

Iimpawu ezibonakalayo zeSinteredSiliconCarbide

性质 / Ipropati

典型数值 / Ixabiso eliqhelekileyo

化学成分 / ImichizaUkuqamba

SiC>95%, Si<5%

体积密度 / Unizi lolwapho kuyiwa khona

>3.07 g/cm³

显气孔率/ I-porosity ebonakalayo

I-porosity ebonakalayo

<0.1%

常温抗弯强度/ Imodyuli yokugqabhuka kwi-20℃

270 MPa

高温抗弯强度/ Imodyuli yokugqabhuka kwi-1200℃

290MPa

硬度/ Ukuqina kwi-20℃

2400 Kg/mm²

断裂韧性/ Ukuqina kokwaphuka kwi-20%

3.3MPa · m1/2

导热系数/ I-Thermal Conductivity kwi-1200℃

45w/m .K

热膨胀系数/ Ukwandiswa kweThermal kwi-20-1200℃

4.51 × 10-6/℃

最高工作温度/ Ubushushu bokusebenza

1400℃

热震稳定性/ Ukumelana nokothuka kwe-Thermal kwi-1200℃

Kulungile

Kutheni ukhetha iSintered Silicon Carbide yethu (SiC) iCrystal / Wafer Boat?

Ukukhetha iSiC Crystal/Wafer Boat yethu kuthetha ukukhetha ukuthembeka, ukusebenza kakuhle, kunye nokuphila ixesha elide. Isikhephe ngasinye sifumana amanyathelo angqongqo olawulo lomgangatho ukuqinisekisa ukuba sifikelela kwimigangatho ephezulu yoshishino. Le mveliso ayiphuculi kuphela ukhuseleko kunye nemveliso yenkqubo yakho yokuvelisa kodwa ikwaqinisekisa umgangatho ongaguqukiyo weekristale zakho zesilicon kunye neewafers. NgeSikhephe sethu se-SiC Crystal / Wafer, unokuthembela kwisisombululo esixhasa ukugqwesa kwakho kokusebenza.

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