AbaSinteredI-Silicon Carbide (SiC)Ikristale/Isikhephe esisicabayenzelwe iimfuno ezingqongqo zesemiconductor kunye ne-microelectronics industry. Ibonelela ngeqonga elikhuselekileyo lokuphatha iikristale zesilicon kunye neewafers ngexesha lokusetyenzwa kobushushu obuphezulu, ukuqinisekisa ukuba ingqibelelo yabo kunye nobunyulu bugcinwa kulo lonke.
Ezona mpawu
- Uzinzo olubalaseleyo lweThermal: Iyakwazi ukunyamezela ukushisa ukuya kwi-1600 ° C, ilungele iinkqubo ezifuna ulawulo oluchanekileyo lwe-thermal.
- Ukumelana neMichiza ePhakamileyo: Ukumelana neekhemikhali ezininzi ezonakalisayo kunye neegesi, ezibonelela ngokuzinzileyo kwiindawo ezisebenza nzima.
- Amandla oomatshini aqinileyo: Ugcina ingqibelelo yesakhiwo phantsi koxinzelelo oluphezulu, ukunciphisa amathuba okuba nokuguqulwa okanye ukuphuka.
- Ukwandiswa kweThermal encinci: Yenzelwe ukunciphisa umngcipheko wokothuka kwe-thermal kunye nokuqhekeka, ukunika ukusebenza okuthembekileyo kusetyenziso olwandisiweyo.
- Uveliso oluchanekileyo: Yenziwe ngokuchaneka okuphezulu ukuhlangabezana neemfuno zenkqubo ethile kunye nokwamkela ubungakanani obahlukeneyo bekristale kunye nobukhulu be-wafer.
Usetyenziso
• Ukusetyenzwa kwe-wafer ye-semiconductor
• Ukwenziwa kwe-LED
• Ukuveliswa kweeseli ze-Photovoltaic
• Iinkqubo zokubeka umphunga kwikhemikhali (CVD).
• Uphando nophuhliso kwinzululwazi yezinto eziphathekayo
| 烧结碳化硅物理特性 Iimpawu ezibonakalayo zeSinteredSiliconCarbide | |
| 性质 / Ipropati | 典型数值 / Ixabiso eliqhelekileyo |
| 化学成分 / ImichizaUkuqamba | SiC>95%, Si<5% |
| 体积密度 / Unizi lolwapho kuyiwa khona | >3.07 g/cm³ |
| 显气孔率/ I-porosity ebonakalayo I-porosity ebonakalayo | <0.1% |
| 常温抗弯强度/ Imodyuli yokugqabhuka kwi-20℃ | 270 MPa |
| 高温抗弯强度/ Imodyuli yokugqabhuka kwi-1200℃ | 290MPa |
| 硬度/ Ukuqina kwi-20℃ | 2400 Kg/mm² |
| 断裂韧性/ Ukuqina kokwaphuka kwi-20% | 3.3MPa · m1/2 |
| 导热系数/ I-Thermal Conductivity kwi-1200℃ | 45w/m .K |
| 热膨胀系数/ Ukwandiswa kweThermal kwi-20-1200℃ | 4.51 × 10-6/℃ |
| 最高工作温度/ Ubushushu bokusebenza | 1400℃ |
| 热震稳定性/ Ukumelana nokothuka kwe-Thermal kwi-1200℃ | Kulungile |
Kutheni ukhetha iSintered Silicon Carbide yethu (SiC) iCrystal / Wafer Boat?
Ukukhetha iSiC Crystal/Wafer Boat yethu kuthetha ukukhetha ukuthembeka, ukusebenza kakuhle, kunye nokuphila ixesha elide. Isikhephe ngasinye sifumana imilinganiselo engqongqo yolawulo lomgangatho ukuqinisekisa ukuba sidibana neyona migangatho iphezulu yoshishino. Le mveliso ayiphuculi kuphela ukhuseleko kunye nemveliso yenkqubo yakho yokuvelisa kodwa ikwaqinisekisa umgangatho ongaguqukiyo weekristale zakho zesilicon kunye neewafers. NgeSikhephe sethu se-SiC Crystal / Wafer, unokuthembela kwisisombululo esixhasa ukugqwesa kwakho kokusebenza.
