Isikhephe esineWafer esidibanayo

Isikhitshane esineWafer esineSikhephe esiFakelweyo Umfanekiso

Inkcazelo emfutshane:

I-Contiguous Wafer Boat evela kwi-vet-china yenzelwe ukuphatha i-wafer esebenzayo kwimveliso ye-semiconductor. Eyenziwe ngokuchanekileyo, isisombululo se-vet-china siqinisekisa ukuzinza kwe-thermal kunye nokuchasana kweekhemikhali, ukuphucula iinkqubo zokuvelisa ngelixa ukunciphisa umonakalo kunye nokuphucula ukuphuma.

Thumela i-imeyile kuthi Khuphela njengePDF

Iinkcukacha zeMveliso

Iithegi zeMveliso

i-vet-china yazisa i-state-of-the-art i-Contiguous Wafer Boat eyenzelwe isizukulwana esilandelayo sokwenziwa kwe-semiconductor. Esi sikhephe senziwe ngobuchule sinikezela ngokuchaneka okungenakuthelekiswa nanto ekuphathweni kwe-wafer, iqinisekisa ukusebenza ngokungenamthungo kunye nokunciphisa kakhulu umngcipheko womonakalo ngexesha lokusetyenzwa.

Yakhelwe ngemathiriyeli ekumgangatho ophezulu, iContiguous Wafer Boat inozinzo olubalaseleyo lobushushu kunye nokumelana neekhemikhali okukhethekileyo, iyenza ilungele ubushushu obuphezulu kunye nobume bemichiza eqatha. Uyilo lwayo olutsha luqinisekisa ukuba ii-wafers zigcinwe ngokukhuselekileyo kwaye zilungelelaniswe ngokugqibeleleyo, ziphucula imveliso kunye nokunyusa ukusebenza kakuhle kwemveliso.

Esi sikhephe esisicaba silungiselelwe ukuhlangabezana neemfuno ezifunekayo zeelaphu zale mihla ze-semiconductor, ezixhasa ubungakanani obahlukeneyo be-wafer kunye noqwalaselo. Ngokubandakanya i-Contiguous Wafer Boat esuka kwi-vet-china kumgca wakho wemveliso, unokulindela ukusebenza okuphuculweyo, ukunciphisa ixesha lokunciphisa, kunye nokunyuka kwamazinga esivuno.

Yiva umahluko ngokuzibophelela kwe-vet-china kumgangatho kunye nokutsha, ukuhambisa iimveliso ezityhala imida yokwenziwa kwe-semiconductor. Khetha iSikhephe esiXhwatshazelwayo esiXhwatshazayo kwaye uphakamise amandla akho okulungisa i-wafer ukuya kwiindawo eziphakamileyo.

Iipropati ze-silicon carbide ehlaziyiweyo

I-silicon carbide ehlaziyiweyo (i-R-SiC) yinto ephezulu yokusebenza enobunzima besibini kuphela kwidayimane, eyenziwe kubushushu obuphezulu obungaphezulu kwe-2000 ℃. Igcina iipropathi ezininzi ezigqwesileyo ze-SiC, ezinje ngamandla obushushu obuphezulu, ukuxhathisa okuqinileyo kwe-corrosion, ukuxhathisa okugqwesileyo kwe-oxidation, ukuchasana kakuhle nokothuka kwe-thermal njalo njalo.

● Iimpawu ezigqwesileyo zoomatshini. I-silicon carbide ehlaziyiweyo inamandla aphezulu kunye nokuqina kune-carbon fiber, ukuchasana kweempembelelo eziphezulu, kunokudlala ukusebenza kakuhle kwiindawo eziphakamileyo zokushisa, kunokudlala ukusebenza kakuhle kokulinganisa kwiimeko ezahlukeneyo. Ukongezelela, ibuye ibe nokuguquguquka okulungileyo kwaye ayonakaliswa lula ngokuzolula kunye nokugoba, okuphucula kakhulu ukusebenza kwayo.

● Ukumelana ne-corrosion ephezulu. I-silicon carbide ehlaziyiweyo inokumelana nokugqwala okuphezulu kwiindidi ezahlukeneyo zeendaba, inokuthintela ukukhukuliseka kweentlobo ezahlukeneyo zeendaba ezitshabalalisayo, inokugcina iipropathi zayo zemishini ixesha elide, inokuqina okuqinileyo, ukuze ibe nobomi obude benkonzo. Ukongezelela, ikwanayo nokuzinza okuhle kwe-thermal, iyakwazi ukulungelelanisa uluhlu oluthile lokutshintsha kweqondo lokushisa, ukuphucula umphumo wesicelo sayo.

● Ukuhlambalaza akufihli. Ngenxa yokuba inkqubo ye-sintering ayinciphisi, akukho xinzelelo olushiyekileyo luya kubangela ukuguqulwa okanye ukuqhekeka kwemveliso, kunye neengxenye ezinemilo enzima kunye nokuchaneka okuphezulu kunokulungiswa.

重结晶碳化硅物理特性 Iimpawu ezibonakalayo zeRecrystallized Silicon Carbide
性质 / Ipropati	典型数值 / Ixabiso eliqhelekileyo
使用温度/ Ubushushu bokusebenza (°C)	1600°C (neoksijini), 1700°C (ukunciphisa okusingqongileyo)
SiC含量/ Umxholo weSiC	> 99.96%
自由Si含量/ Isiqulatho sasimahla seSi	< 0.1%
体积密度/Unizi lolwapho kuyiwa khona	2.60-2.70 g / cm³
气孔率/ I-porosity ebonakalayo	< 16%
抗压强度/ Amandla oxinzelelo	> 600MPa
常温抗弯强度/Amandla okugoba okubandayo	80-90 MPa (20°C)
高温抗弯强度Amandla okugoba ashushu	90-100 MPa (1400°C)
热膨胀系数/ Ukwandiswa kweThermal @1500°C	4.70 10^-6/°C
导热系数/I-Thermal conductivity @1200°C	23W/m•K
杨氏模量/ Imodyuli yeelastiki	240 GPA
抗热震性/ Ukuxhathisa ukothuka kobushushu	Ulunge kakhulu

Amandla eVET yi iumenzi wokwenyani weemveliso ezenziwe ngokwezifiso zegraphite kunye nesilicon carbide ene-CVD coating,inokubonelelaezahlukeneyoiindawo ezilungiselelwe i-semiconductor kunye ne-photovoltaic industry. OIqela le-ur lobuchwephesha livela kumaziko aphezulu ophando lwasekhaya, linokubonelela ngezisombululo zemathiriyeli yobuchwepheshayeyakho.

Siqhubeka siphuhlisa iinkqubo eziphambili ukubonelela ngemathiriyeli ephezulu kakhulu,kwayebaye benza iteknoloji ekhethekileyo yelungelo elilodwa lomenzi wechiza, enokwenza iqhina phakathi kwengubo kunye ne-substrate ibe ngqongqo kwaye ingabikho lula kwi-detachment.

CVD SiC薄膜基本物理性能 Iimpawu ezisisiseko ze-CVD SiCukutyabeka
性质 / Ipropati	典型数值 / Ixabiso eliqhelekileyo
晶体结构 / Ulwakhiwo lweCrystal	FCC isigaba β多晶，主要為（111）取向
密度 / Ubuninzi	3.21 g/cm³
硬度 / Ukuqina	2500 维氏硬度 (500g umthwalo)
晶粒大小 / Ukhozo SiZe	2 ~ 10μm
纯度 / Ukucoceka kwemichiza	99.99995%
热容 / Umthamo wobushushu	640 J·kg^-1·K^-1
升华温度 / Iqondo lobushushu elisezantsi	2700℃
抗弯强度 / Amandla e-Flexural	415 MPa RT 4-inqaku
杨氏模量 / Imodyuli yabaselula	430 Gpa 4pt bend, 1300℃
导热系数 / ThermalUkuqhuba	300Wm^-1·K^-1
热膨胀系数 / Ukwandiswa kweThermal(CTE)	4.5×10^-6K^-1