SiC Wafer Boat / Tower

Inkcazelo emfutshane:

Thumela i-imeyile kuthi Khuphela njengePDF

Iinkcukacha zeMveliso

Iithegi zeMveliso

ImvelisoDumbhalo

I-Silicon carbide Wafer Boat isetyenziswa ngokubanzi njengesibambi se-wafer kwinkqubo yokusasazwa kobushushu obuphezulu.

Izinto eziluncedo:

Ukumelana nobushushu obuphezulu:ukusetyenziswa okuqhelekileyo kwi-1800 ℃

I-conductivity ephezulu ye-thermal:ilingana nezinto zegraphite

Ukuqina okuphezulu:ukuqina okwesibini kuphela kwidayimane, i-boron nitride

Ukumelana nokubola:iasidi eyomeleleyo kunye ne-alkali ayinamhlwa kuyo, ukuxhathisa ukubola kungcono kune-tungsten carbide kunye ne-alumina.

Ubunzima obulula:ukuxinana okuphantsi, kufutshane ne-aluminiyam

Akukho deformation: i-coefficient ephantsi yokwandiswa kwe-thermal

Ukuxhathisa ukothuka kwe-Thermal:inokumelana nokutshintsha kobushushu obubukhali, ukuxhathisa ukothuka kwe-thermal, kwaye inokusebenza okuzinzileyo

IiPropati zoBume beSiC

Ipropati	Ixabiso	Indlela
Ukuxinana	3.21 g/cc	I-Sink-float kunye ne-dimension
Ubushushu obuthile	0.66 J/g °K	Isibane se-laser pulsed
Amandla e-Flexural	450 MPa560 MPa	I-4 point bend, i-RT4 point bend, i-1300 °
Ukuqina kokwaphuka	2.94 MPa m1/2	I-Microindentation
Ukuqina	2800	Vicker, 500g umthwalo
Elastic ModulusOlutsha's Modulus	450 GPA430 GPA	4 pt ukugoba, RT4 pt ukugoba, 1300 °C
Ubungakanani beenkozo	2 – 10 µm	I-SEM

Iipropati zoThermal zeSiC

I-Thermal Conductivity	250 W/m °K	Indlela yeLaser flash, RT
Ukwandiswa kweThermal (CTE)	4.5 x 10-6 °K	Ubushushu begumbi ukuya kuma-950 °C, i-silica dilatometer