I-SiC Coated ye-Giya ye-Graphite Ring

SiC Coated Graphite Gear Ring Featured Umfanekiso

Inkcazelo emfutshane:

I-VET Energy SiC coated graphite gear ring yimveliso yokusebenza okuphezulu eyilelwe ukubonelela ngokusebenza okungaguqukiyo nokuthembekileyo kwithuba elide. Inokumelana nobushushu obuhle kakhulu kunye nokufana kwe-thermal, ukucoceka okuphezulu, ukuxhathisa ukhukuliseko, kuyenza ibe sisisombululo esifanelekileyo sokusetyenzwa kwe-wafer.

Indawo yeMvelaphi :eTshayina

Ulwakhiwo lweCrystal :isigaba seFCCβ

Ubuninzi :3.21 g/cm;

Ukuqina :2500 Vickers;

Ukucoceka kwemichiza:99.99995%;

Umthamo wobushushu:640J·kg-1·K-1;

Iqondo lobushushu eliphantsi:2700℃;

Ubungakanani benkozo:2~10μm;

Amandla eFelexural:415 Mpa (RT 4-Point);

Imodyuli eNtsha:430 Gpa (4pt bend, 1300℃);

Ukwandiswa kweThermal (CTE):4.5 10-6K-1;

I-Thermal Conductivity :300(W/MK);

Thumela i-imeyile kuthi Khuphela njengePDF

Iinkcukacha zeMveliso

Iithegi zeMveliso

I-SiC Coated Graphite Gear Ring licandelo eliphambili elisetyenziswa kwiinkqubo ezahlukeneyo zokwenziwa kwe-semiconductor. Sisebenzisa itekhnoloji yethu enelungelo elilodwa lomenzi wechiza ukwenza i-silicon carbide carrier ngokucoceka okuphezulu kakhulu, ukufana okuhle kokutyabeka kunye nobomi benkonzo obugqwesileyo, kunye nokumelana neekhemikhali eziphezulu kunye neempawu zokuzinza kwe-thermal.

I-VET Amandla ngumvelisi wokwenyani weemveliso zegraphite kunye ne-silicon carbide kunye nonyango oluphezulu olufana ne-SiC yokugqoka, i-TaC yokugqoka, i-glassy carbon coating, i-pyrolytic carbon coating, njl., inokubonelela ngeendawo ezahlukeneyo ezilungiselelwe i-semiconductor kunye ne-photovoltaic industry.

Iqela lethu lobuchwephesha livela kumaziko aphezulu ophando lwasekhaya, linokubonelela ngezisombululo zemathiriyeli yobuchwephesha.

Sisoloko siphuhlisa iinkqubo eziphambili zokubonelela ngemathiriyeli ephucukileyo, kwaye sisebenze itekhnoloji eyodwa enelungelo elilodwa lomenzi wechiza, enokwenza iqhina phakathi kwengubo kunye ne-substrate ibe ngqongqo kwaye ingabikho lula ekuthinteleni.

Iimpawu zeemveliso zethu:

1. Ukumelana nobushushu obuphezulu be-oxidation ukuya kuthi ga kwi-1700℃.
2. Ukucoceka okuphezulu kunye nokufana kwe-thermal
3. Ukumelana nokugqwesa okugqwesileyo: i-asidi, i-alkali, ityuwa kunye ne-organic reagents.
4. Ubunzima obuphezulu, indawo edibeneyo, iincinci ezincinci.
5. Ubomi benkonzo ende kwaye buhlala ixesha elide

CVD SiC薄膜基本物理性能 Iimpawu ezisisiseko ze-CVD SiCukutyabeka
性质 / Ipropati	典型数值 / Ixabiso eliqhelekileyo
晶体结构 / Ulwakhiwo lweCrystal	iFCC β isigaba多晶，主要為（111）取向
密度 / Ubuninzi	3.21 g/cm³
硬度 / Ukuqina	2500 维氏硬度 (500g umthwalo)
晶粒大小 / Iinkozo uSiZe	2 ~ 10μm
纯度 / Ukucoceka kwemichiza	99.99995%
热容 / Umthamo wobushushu	640 J·kg^-1·K^-1
升华温度 / Iqondo lobushushu elisezantsi	2700℃
抗弯强度 / Amandla e-Flexural	415 MPa RT 4-point
杨氏模量 / Imodyuli yabaselula	430 Gpa 4pt bend, 1300℃
导热系数 / ThermalUkuqhuba	300Wm^-1·K^-1
热膨胀系数 / Ukwandiswa kweThermal(CTE)	4.5×10^-6K^-1