Ukuhlolwa koMgangatho we-China Industrial Polycrystalline Diamond Powder 3-6um yeSapphire Wafer

Inkcazelo emfutshane:

Indawo yemvelaphi:eTshayina

Ulwakhiwo lweCrystal :isigaba seFCCβ

Ubuninzi :3.21 g/cm;

Ukuqina:2500 Vickers;

Ubungakanani benkozo :2~10μm;

Ukucoceka kwemichiza:99.99995%;

Umthamo wobushushu :640J·kg-1·K-1;

Iqondo lobushushu elingaphantsi :2700℃;

Amandla eFelexural:415 Mpa (RT 4-Point);

Imodyuli eNtsha:430 Gpa (4pt bend, 1300℃);

Ukwandiswa kweThermal (CTE) :4.5 10-6K-1;

I-Thermal Conductivity:300(W/MK);

Thumela i-imeyile kuthi Khuphela njengePDF

Iinkcukacha zeMveliso

Iithegi zeMveliso

"Ukunyaniseka, ukusungula izinto ezintsha, uBungqongqo, kunye nokuSebenza" yimbono eqhubekayo yenkampani yethu ixesha elide lokuphuhlisa kunye nabathengi ukuze baphinde baphinde bazuze kwaye bazuze ukuHlola uMgangatho weChina Industrial Polycrystalline.Idayimani yomguboI-3-6um yeSapphire Wafer, Siqinisekile ukuba sinokubonelela ngeemveliso ezikumgangatho ophezulu kunye nezisombululo kwithegi yexabiso elifanelekileyo, inkxaso ephezulu emva kokuthengisa kubathengi. Kwaye siya kwakha uhambo olude oludlamkileyo.
"Ukunyaniseka, ukusungula izinto ezintsha, ubungqongqo, kunye nokusebenza kakuhle" yimbono eqhubekayo yenkampani yethu ixesha elide lokuphuhlisa kunye nabathengi ukuze baphinde bazuze kwaye bazuze ngokufanayoChina Synthetic Diamond, Idayimani yomgubo, Sisoloko sigxininisa kumgaqo wolawulo othi “Umgangatho WokuQala, ITekhnoloji iSiseko, Ukunyaniseka kunye nokuTshintsha”.Siyakwazi ukuphuhlisa iimveliso ezintsha ngokuqhubekayo ukuya kwinqanaba eliphezulu ukwanelisa iimfuno ezahlukeneyo zabathengi.
Ingcaciso yeMveliso

Inkampani yethu ibonelela ngeenkonzo zenkqubo yokugquma kwe-SiC ngendlela ye-CVD kumphezulu wegraphite, iikeramics kunye nezinye izinto, ukwenzela ukuba iigesi ezikhethekileyo ezinekhabhoni kunye nesilicon zisabela kubushushu obuphezulu ukuze zifumane ubunyulu obuphezulu beamolekyuli zeSiC, iimolekyuli ezifakwe kumphezulu wezinto ezigqunyiweyo, ukwenza umaleko okhuselayo we-SIC.

Iimpawu eziphambili:

1. Ukumelana nobushushu obuphezulu be-oxidation:

Ukumelana ne-oxidation kusekuhle kakhulu xa ubushushu buphezulu ukuya kuma-1600 C.

2. Ukucoceka okuphezulu : yenziwe yi-chemical vapor deposition phantsi kwemeko yokushisa kwe-chlorination ephezulu.

3. Ukumelana nokhukuliseko: ubunzima obuphezulu, indawo edibeneyo, iincinci ezincinci.

4. Ukumelana nokubola: i-asidi, i-alkali, ityuwa kunye ne-organic reagents.

IiNgcaciso eziphambili ze-CVD-SIC Coating

Iipropati zeSiC-CVD
Ulwakhiwo lweCrystal	iFCC β isigaba
Ukuxinana	g/cm ³	3.21
Ukuqina	Vickers ubulukhuni	2500
Ubungakanani benkozo	μm	2~10
Ucoceko lweMichiza	%	99.99995
Ubushushu Umthamo	J·kg-1 ·K-1	640
Iqondo lobushushu elisezantsi	℃	2700
Amandla eFelexural	MPa (RT 4-point)	415
Imodulus eselula	I-Gpa (4pt bend, 1300℃)	430
Ukwandiswa kweThermal (CTE)	10-6K-1	4.5
I-Thermal conductivity	(W/mK)	300