Umzi-mveliso othengisa iTshayina epolishiweyo yeSilicon yeCarbide Sisic yokuSila umphanda weSic Tube yokuSila

Umzi-mveliso othengisa iTshayina ePoliziweyo yeSilicon Carbide Sisic yokuSila umphanda weSic Tube yokuSila uMfanekiso oFakelweyo

Inkcazelo emfutshane:

Indawo yemvelaphi:eTshayina

Ulwakhiwo lweCrystal :isigaba seFCCβ

Ubuninzi :3.21 g/cm;

Ukuqina:2500 Vickers;

Ubungakanani benkozo:2~10μm;

Ukucoceka kwemichiza:99.99995%;

Umthamo wobushushu :640J·kg-1·K-1;

Iqondo lobushushu eliphantsi:2700℃;

Amandla eFelexural :415 Mpa (RT 4-Point);

Imodyuli eNtsha:430 Gpa (4pt bend, 1300℃);

Ukwandiswa kweThermal (CTE) :4.5 10-6K-1;

I-Thermal Conductivity:300(W/MK);

Thumela i-imeyile kuthi Khuphela njengePDF

Iinkcukacha zeMveliso

Iithegi zeMveliso

Konke esikwenzayo kuhlala kunxulumene ne-tenet yethu ” Umxhasi kuqala, Yiba nentembelo kwi-1st, unikezela malunga nokupakishwa kokutya kunye nokhuseleko lokusingqongileyo kwiFactory ethengisa iChina epolishiweyo yeSilicon Carbide Sisic yokuSila umphanda weSic Tube yokuSila, Samkela ngokufudumeleyo ithemba, imibutho yentlangano. kunye namaqabane avela kuyo yonke indawo emhlabeni ukuba aqhagamshelane nathi kwaye acele intsebenziswano ukuze axhamle ngokufanayo.
Yonke into esiyenzayo ihlala inxulumene netenet yethu ” Umthengi kuqala, Yiba nentembelo kwi-1st, unikezela malunga nokupakishwa kokutya kunye nokukhuselwa kwendalo.China SAE1026 Honing Tube, S45c Honed Tube, Imveliso yethu ithunyelwe kumazwe angaphezu kwama-30 kunye nemimandla njengomthombo wesandla sokuqala kunye nexabiso eliphantsi. Samkela ngokunyanisekileyo abathengi abasuka ekhaya nakwamanye amazwe ukuba beze kuthethathethana nathi ngoshishino.
Ingcaciso yeMveliso

Inkampani yethu ibonelela ngeenkonzo zenkqubo yokugquma kwe-SiC ngendlela ye-CVD kumphezulu wegraphite, iikeramics kunye nezinye izinto, ukwenzela ukuba iigesi ezikhethekileyo ezinekhabhoni kunye nesilicon zisabela kubushushu obuphezulu ukuze zifumane ubunyulu obuphezulu beamolekyuli zeSiC, iimolekyuli ezifakwe kumphezulu wezinto ezigqunyiweyo, ukwenza umaleko okhuselayo we-SIC.

Iimpawu eziphambili:

1. Ukumelana nobushushu obuphezulu be-oxidation:

Ukumelana ne-oxidation kusekuhle kakhulu xa ubushushu buphezulu ukuya kuma-1600 C.

2. Ukucoceka okuphezulu : yenziwe yi-chemical vapor deposition phantsi kwemeko yokushisa kwe-chlorination ephezulu.

3. Ukumelana nokhukuliseko: ubunzima obuphezulu, indawo edibeneyo, iincinci ezincinci.

4. Ukumelana nokubola: i-asidi, i-alkali, ityuwa kunye ne-organic reagents.

IiNgcaciso eziphambili ze-CVD-SIC Coating

Iipropati zeSiC-CVD
Ulwakhiwo lweCrystal	iFCC β isigaba
Ukuxinana	g/cm ³	3.21
Ukuqina	Vickers ubulukhuni	2500
Ubungakanani benkozo	μm	2~10
Ucoceko lweMichiza	%	99.99995
Ubushushu Umthamo	J·kg-1 ·K-1	640
Iqondo lobushushu elisezantsi	℃	2700
Amandla eFelexural	MPa (RT 4-point)	415
Imodulus eselula	I-Gpa (4pt bend, 1300℃)	430
Ukwandiswa kweThermal (CTE)	10-6K-1	4.5
I-Thermal conductivity	(W/mK)	300