Njengodidi olutsha lwezixhobo ze-semiconductor, i-SiC iye yaba yeyona nto ibalulekileyo ye-semiconductor yokwenziwa kwezixhobo ze-optoelectronic ze-wavelength emfutshane, izixhobo zobushushu obuphezulu, izixhobo zokumelana nemitha kunye namandla aphezulu / amandla aphezulu ezixhobo zombane ngenxa yeempawu zayo ezibalaseleyo zomzimba kunye neekhemikhali kwaye iimpawu zombane. Ngokukodwa xa isetyenziswe phantsi kweemeko ezigqithisileyo kunye neemeko ezinzima, iimpawu zezixhobo ze-SiC zidlula kude ezo zezixhobo ze-Si kunye nezixhobo ze-GaAs. Ke ngoko, izixhobo ze-SiC kunye neentlobo ezahlukeneyo zezinzwa ngokuthe ngcembe ziye zaba sesinye sezixhobo eziphambili, zidlala indima ebaluleke ngakumbi nangakumbi.
Izixhobo ze-SiC kunye neesekethe ziphuhliswe ngokukhawuleza ukususela ngo-1980, ngakumbi ukususela ngo-1989 xa i-wafer yokuqala ye-SiC substrate yangena kwimarike. Kwezinye iindawo, ezifana ne-diodes ekhupha ukukhanya, i-high-frequency high-high-power and high-voltage devices, izixhobo ze-SiC zisetyenziswe ngokubanzi ngokurhweba. Uphuhliso lukhawuleza. Emva kweminyaka ephantse ibeli-10 yophuhliso, inkqubo yesixhobo se-SiC iye yakwazi ukwenza izixhobo zorhwebo. Inani leenkampani ezimelwe yiCree ziye zaqala ukubonelela ngeemveliso zorhwebo zezixhobo ze-SiC. Amaziko ophando lwasekhaya kunye neeyunivesithi nazo zenze impumelelo eyanelisayo ekukhuleni kwezinto ze-SiC kunye neteknoloji yokuvelisa izixhobo. Nangona izinto ze-SiC zineepropati eziphezulu kakhulu zomzimba kunye neekhemikhali, kwaye iteknoloji yesixhobo se-SiC nayo ikhulile, kodwa ukusebenza kwezixhobo ze-SiC kunye neesekethe azikho ngaphezulu. Ukongeza kwizinto zeSiC kunye nenkqubo yesixhobo kufuneka zihlale ziphuculwa. Iinzame ezingakumbi kufuneka zibekwe kwindlela yokuthatha ithuba lemathiriyeli ye-SiC ngokulungiselela ulwakhiwo lwesixhobo se-S5C okanye ukucebisa ubume besixhobo esitsha.
Ngoku. Uphando lwezixhobo ze-SiC lujolise ikakhulu kwizixhobo ezicacileyo. Kuhlobo ngalunye lwesakhiwo sesixhobo, uphando lokuqala kukutshintshela ngokulula iSi okanye isakhiwo sesixhobo se-GaAs esihambelanayo kwi-SiC ngaphandle kokuphucula ubume besixhobo. Ekubeni i-intrinsic oxide layer ye-SiC ifana ne-Si, eyi-SiO2, oko kuthetha ukuba izixhobo ezininzi ze-Si, ngakumbi izixhobo ze-m-pa, zingenziwa kwi-SiC. Nangona kukutshintshwa nje okulula, ezinye zezixhobo ezifunyenweyo ziye zafumana iziphumo ezanelisayo, kwaye ezinye zezixhobo sele zingene kwimarike yefektri.
Izixhobo ze-SiC ze-optoelectronic, ngakumbi i-blue light emitting diode (i-BLU-ray leds), zingene kwimarike ekuqaleni kweminyaka yee-1990 kwaye zizixhobo zokuqala ze-SiC eziveliswe ngobuninzi. Amandla ombane aphezulu e-SiC Schottky diode, ii-SiC RF transistors zamandla, ii-SiC MOSFETs kunye neemesFET zikwafumaneka ngokurhweba. Ngokuqinisekileyo, ukusebenza kwazo zonke ezi mveliso ze-SiC kukude ekudlaleni iimpawu eziphezulu zezixhobo ze-SiC, kwaye umsebenzi onamandla kunye nokusebenza kwezixhobo ze-SiC kusafuna ukuphandwa kunye nokuphuhliswa. Ukutshintshwa okulula okunjalo kaninzi akunakukwazi ukusebenzisa ngokupheleleyo iingenelo zezixhobo ze-SiC. Nakwindawo yezinye iingenelo zezixhobo zeSiC. Ezinye zezixhobo ze-SiC ezenziwe ekuqaleni azikwazi ukuhambelana nokusebenza kwezixhobo ezihambelanayo ze-Si okanye ze-CaAs.
Ukuze kuguqulwe ngcono iingenelo zeempawu zezinto ze-SiC zibe ziinzuzo zezixhobo ze-SiC, ngoku sifunda indlela yokuphucula inkqubo yokuvelisa isixhobo kunye nesakhiwo sesixhobo okanye ukuphuhlisa izakhiwo ezintsha kunye neenkqubo ezintsha zokuphucula umsebenzi kunye nokusebenza kwezixhobo ze-SiC.
Ixesha lokuposa: Aug-23-2022