Indlela entsha yokudibanisa iileya ze-semiconductors zincinci njengee-nanometers ezimbalwa zikhokelele ekufumaneni isayensi kuphela kodwa kunye nohlobo olutsha lwe-transistor yezixhobo zombane zamandla aphezulu. Isiphumo, esipapashwe kwii-Applied Physics Letters, siye savusa umdla omkhulu.
Impumelelo isisiphumo sentsebenziswano esondeleyo phakathi koosonzululwazi kwiYunivesithi yaseLinkoping kunye neSweGaN, inkampani ejikelezayo evela kuphando lwezenzululwazi kwiLiU. Inkampani yenza amacandelo e-elektroniki alungelelanisiweyo ukusuka kwi-gallium nitride.
I-Gallium nitride, i-GaN, yi-semiconductor esetyenziselwa ukukhupha ukukhanya okusebenzayo. Nangona kunjalo, inokuba luncedo kwezinye izicelo, ezinjengee-transistors, kuba inokumelana namaqondo obushushu aphezulu kunye namandla angoku kunezinye ii-semiconductors ezininzi. Ezi ziipropati ezibalulekileyo kumacandelo e-elektroniki azayo, kungekhona ubuncinane kwezo zisetyenziselwa izithuthi zombane.
Umphunga we-Gallium nitride uvumelekile ukuba ujiyane kwi-wafer ye-silicon carbide, yenze isambatho esincinci. Indlela ekukhuliswa ngayo enye imathiriyeli yekristale kwenye isubstrate enye yaziwa ngokuba yi "epitaxy." Indlela isoloko isetyenziswa kwishishini le-semiconductor kuba inika inkululeko enkulu ekumiseleni zombini ubume bekristale kunye nokwakheka kweekhemikhali zefilimu ye-nanometer eyenziwe.
Ukudibanisa i-gallium nitride, i-GaN, kunye ne-silicon carbide, i-SiC (zombini ezinokuthi zikwazi ukumelana nombane oqinileyo), ziqinisekisa ukuba iisekethe zifanelekile kwizicelo apho amandla aphezulu afunekayo.
Ukufaneleka kumphezulu phakathi kwezinto ezimbini zecrystalline, i-gallium nitride kunye ne-silicon carbide, nangona kunjalo, ihlwempu. Iiathom ziphela zingahambelani, nto leyo ekhokelela ekungaphumelelini kwe-transistor. Oku kuqwalaselwe luphando, olwathi emva koko lwakhokelela kwisisombululo sorhwebo, apho umaleko obhityileyo we-aluminiyam nitride wabekwa phakathi kwala maleko mabini.
Iinjineli zase-SweGaN ziqaphele ngebhaqo ukuba ii-transistors zabo zinokumelana namandla aphezulu entsimi kunokuba bebelindele, kwaye bebengasiqondi isizathu. Impendulo inokufumaneka kwinqanaba le-athomu - kwindawo embalwa ebalulekileyo ephakathi ngaphakathi kumacandelo.
Abaphandi e-LiU nase-SweGaN, ekhokelwa ngu-LiU's Lars Hultman kunye no-Jun Lu, bakhoyo kwiiLeta zeFiziksi eziSebenzisiweyo inkcazo yesiganeko, kwaye bachaza indlela yokuvelisa ii-transistors ezinamandla amakhulu okumelana nombane ophezulu.
Izazinzulu ziye zafumanisa indlela yokukhula ye-epitaxial eyayingaziwa ngaphambili abayibiza ngokuba "i-transmorphic epitaxial growth." Ibangela ukuba ubunzima obuphakathi kweeleya ezahlukeneyo bufunxeke ngokuthe ngcembe kwiileya ezimbalwa zeeathom. Oku kuthetha ukuba banokukhulisa iileya ezimbini, i-gallium nitride kunye ne-aluminium nitride, kwi-silicon carbide ngendlela yokulawula kwinqanaba le-athomu ukuba iileya zihlobene njani enye kwenye kwimathiriyeli. Kwibhubhoratri baye babonisa ukuba izinto eziphathekayo zimelana ne-voltages ephezulu, ukuya kwi-1800 V. Ukuba i-voltage enjalo ibekwe kwi-classic ye-silicon-based component, iintlantsi ziza kuqala ukubhabha kwaye i-transistor iya kutshatyalaliswa.
“Sivuyisana ne-SweGaN njengokuba iqalisa ukuthengisa olu yilo. Ibonisa intsebenziswano esebenzayo kunye nokusetyenziswa kweziphumo zophando eluntwini. Ngenxa yoqhagamshelwano olusondeleyo esinalo noogxa bethu bangaphambili abasebenzela inkampani ngoku, uphando lwethu lukhawuleza lube nefuthe nangaphandle kwezemfundo, utshilo uLars Hultman.
Izixhobo ezibonelelwa yiYunivesithi yaseLinkoping. Eyoqobo ibhalwe nguMonica Westman Svenselius. Qaphela: Isiqulatho sinokuhlelwa ngokwesitayile nobude.
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Ixesha lokuposa: May-11-2020