IGraphite Substrate Wafer Holder ye-PECVD

Inkcazelo emfutshane:

I-VET Energy's Graphite Substrate Holder yenzelwe ukugcina ukulungelelaniswa kwe-wafer kunye nokuzinza kuyo yonke inkqubo ye-PECVD, ukuthintela ukungcoliseka kunye nokunciphisa umngcipheko womonakalo. I-Graphite Wafer Holder ibonelela ngeqonga elikhuselekileyo, elilinganayo, eliqinisekisa ukuba ii-wafers zivezwe ngokulinganayo kwi-plasma ukwenzela ukubekelwa okufanayo kunye nomgangatho ophezulu. Ngokusebenza kwayo okuphezulu kwe-thermal kunye namandla akhethekileyo, lo mphathi unceda ukuphucula inkqubo yokusebenza kakuhle kunye nokusebenza kwemveliso.

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Iinkcukacha zeMveliso

Iithegi zeMveliso

I-VET Energy Graphite Substrate Wafer Holder ngumthuthi ochanekileyo owenzelwe i-PECVD (i-Plasma Enhanced Chemical Vapor Deposition) inkqubo. Le Graphite Substrate Holder ekumgangatho ophezulu yenziwe ngobunyulu obuphezulu, i-high-density graphite material, enokumelana nobushushu obuphezulu, ukumelana nokugqwala, ukuzinza komda kunye nezinye iimpawu. Inokubonelela ngeqonga lenkxaso elizinzileyo lenkqubo ye-PECVD kwaye iqinisekise ukufana kunye nokunyanzeliswa kwefilimu.

I-VET Energy PECVD inkqubo ye-graphite wafer support table inezi mpawu zilandelayo:

▪Ukucoceka okuphezulu:umxholo wokungcola ophantsi kakhulu, kunqande ukungcoliseka kwefilimu, qinisekisa umgangatho wefilimu.

▪Ukuxinana okuphezulu:ukuxinana okuphezulu, amandla omatshini aphezulu, anokumelana nobushushu obuphezulu kunye noxinzelelo oluphezulu lwe-PECVD bume.

▪Uzinzo olululo lwemilinganiselo:utshintsho oluncinci lwe-dimensional kwiqondo lokushisa eliphezulu, ukuqinisekisa ukuzinza kwenkqubo.

▪I-thermal conductivity egqwesileyo:ngokufanelekileyo ukudlulisa ubushushu ukuthintela ukufudumeza kwewafer.

▪Ukuchasa umhlwa okuqinileyo:lunokuxhathisa ukhukuliseko ngeegesi ezonakalisayo ezahlukeneyo kunye neplasma.

▪Inkonzo eyenzelwe wena:iitafile zenkxaso yegraphite yobukhulu obuhlukeneyo kunye neemilo zingenziwa ngokwezifiso ngokweemfuno zabathengi.

Iinzuzo zeMveliso

▪Phucula umgangatho wefilimu:Qinisekisa ukufakwa kwefilimu efanayo kunye nokuphucula umgangatho wefilimu.

▪Yandisa ubomi besixhobo:Ukumelana nokugqwesa okugqwesileyo, ukwandisa ubomi benkonzo yezixhobo ze-PECVD.

▪Nciphisa iindleko zemveliso:Iitreyi zegraphite ezikumgangatho ophezulu zinokucutha izinga lokulahlwa kunye nokunciphisa iindleko zemveliso.

Imathiriyeli yeGrafite evela kwi-SGL:

Iparameter eqhelekileyo: R6510
Isalathiso	Umgangatho wovavanyo	Ixabiso	Iyunithi
Ubungakanani obuphakathi kweenkozo	ISO 13320	10	μm
Unizi lolwapho kuyiwa khona	I-DIN IEC 60413/204	1.83	g/cm³
I-porosity evulekile	DIN66133	10	%
Ubungakanani bepore obuphakathi	DIN66133	1.8	μm
Ukufikeleleka	DIN 51935	0.06	cm²/s
Ubunzima be-Rockwell HR5/100	I-DIN IEC60413/303	90	HR
Ukuxhatshazwa kombane okuthe ngqo	I-DIN IEC 60413/402	13	μΩm
Amandla e-Flexural	I-DIN IEC 60413/501	60	MPa
Amandla acinezelayo	DIN 51910	130	MPa
Imodyuli yolutsha	DIN 51915	11.5×10³	MPa
Ukwandiswa kweThermal(20-200℃)	DIN 51909	4.2X10^-6	K^-1
I-Thermal conductivity (20℃)	DIN 51908	105	Wm^-1K^-1

Yenzelwe ngokukodwa ukwenziwa komgangatho ophezulu wokwenziwa kweeseli zelanga, ezixhasa i-G12 ubungakanani obukhulu be-wafer processing. Uyilo oluphuculweyo lomthwali wonyusa kakhulu umthamo, uvumela amazinga esivuno aphezulu kunye neendleko eziphantsi zemveliso.

Into	Uhlobo	Inombolo yomphathi wewafer
PEVCD Grephite iphenyane - The 156 series	156-13 isikhephe segrephite	144
	156-19 isikhephe segrephite	216
	156-21 isikhephe segrephite	240
	156-23 isikhephe segraphite	308
PEVCD Grephite iphenyane - The 125 series	125-15 isikhephe segrephite	196
	125-19 isikhephe segrephite	252
	125-21 isikhephe se-grphite	280