I-Graphite Carrier yenkqubo ye-PECVD

Inkcazelo emfutshane:

Amandla e-VETI-PECVD Graphite Boat yeSolar Panel licandelo eliphambili elenzelwe ngokukodwa ukuveliswa kweepaneli zelanga eziphezulu. Isetyenziswe kwiinkqubo ze-Plasma Enhanced Chemical Vapor Deposition (PECVD), esi sikhephe segraphite siqinisekisa ukuphatha izinto ezifanelekileyo kunye nokubekwa okufanayo kweefilimu ezincinci kwiiseli zelanga. Yenzelwe ukuchaneka kunye nokuqina, ibonelela nge-conductivity ephezulu ye-thermal, ukuxhathisa okuphezulu kwe-corrosion, kunye nokungcoliswa okuncinci, okuyimfuneko ekuveliseni iipaneli zelanga ezisebenzayo, eziphezulu.

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Iinkcukacha zeMveliso

Iithegi zeMveliso

Amandla e-VETInkqubo ye-PECVD ye-graphite carrier yinkqubo yokusetyenziswa komgangatho ophezulu elungiselelwe i-PECVD (i-plasma ephuculweyo yokubeka umphunga wekhemikhali) inkqubo. Lo mphathiswa wegraphite wenziwa ngococeko oluphezulu, olunoxinano oluphezulu lwegraphite, kunye nokumelana nobushushu obuphezulu, ukumelana nokugqwala, ukuzinza kwedimensional kunye nezinye iimpawu, kunokubonelela ngeqonga elizinzileyo lokuthwala inkqubo ye-PECVD, ukuqinisekisa ukufana kunye nokuthe tyaba kwefilimu encinci. ukubekwa.

Abathwali beGraphite kwinkqubo ye-PECVD banezi mpawu zilandelayo:

▪ Ubunyulu obuphezulu: ubumdaka obuphantsi kakhulu, ukuphepha ukungcoliseka kwefilimu nokuqinisekisa umgangatho wefilimu.

▪ Uxinaniso oluphezulu: ubuninzi obuphezulu, amandla aphezulu omatshini, okwazi ukumelana nobushushu obuphezulu kunye noxinzelelo oluphezulu lwe-PECVD indawo.

▪ Uzinzo oluhle lomgangatho: utshintsho oluncinci lwe-dimensional kwiqondo lokushisa eliphezulu, ukuqinisekisa ukuzinza kwenkqubo.

▪ I-thermal conductivity egqwesileyo: ngokufanelekileyo ukudlulisa ubushushu ukuthintela ukufudumeza kwe-wafer.

▪ Ukumelana nomhlwa okunamandla: iyakwazi ukuxhathisa ukhukuliseko ngenxa yeegesi ezonakalisayo ezahlukahlukeneyo kunye neplasma.

▪ Inkonzo eyenziwe ngokwezifiso: abathwali begraphite bobukhulu obuhlukeneyo kunye neemilo zinokwenziwa ngokwezifiso ngokweemfuno zabathengi.

Imathiriyeli yeGrafite evela kwi-SGL:

Iparameter eqhelekileyo: R6510
Isalathiso	Umgangatho wovavanyo	Ixabiso	Iyunithi
Ubungakanani obuphakathi kweenkozo	ISO 13320	10	μm
Unizi lolwapho kuyiwa khona	I-DIN IEC 60413/204	1.83	g/cm³
I-porosity evulekile	DIN66133	10	%
Ubungakanani bepore obuphakathi	DIN66133	1.8	μm
Ukufikeleleka	DIN 51935	0.06	cm²/s
Ubunzima be-Rockwell HR5/100	I-DIN IEC60413/303	90	HR
Ukuxhatshazwa kombane okuthe ngqo	I-DIN IEC 60413/402	13	μΩm
Amandla e-Flexural	I-DIN IEC 60413/501	60	MPa
Amandla acinezelayo	DIN 51910	130	MPa
Imodyuli yolutsha	DIN 51915	11.5×10³	MPa
Ukwandiswa kweThermal(20-200℃)	DIN 51909	4.2X10^-6	K^-1
I-Thermal conductivity (20℃)	DIN 51908	105	Wm^-1K^-1

Yenzelwe ngokukodwa ukwenziwa komgangatho ophezulu wokwenziwa kweeseli zelanga, ezixhasa i-G12 ubungakanani obukhulu be-wafer processing. Uyilo oluphuculweyo lomthwali wonyusa kakhulu umthamo, uvumela amazinga esivuno aphezulu kunye neendleko eziphantsi zemveliso.

Into	Uhlobo	Inombolo yomphathi wewafer
PEVCD Grephite iphenyane - The 156 series	156-13 isikhephe segrephite	144
	156-19 isikhephe segrephite	216
	156-21 isikhephe segrephite	240
	156-23 isikhephe segraphite	308
PEVCD Grephite iphenyane - The 125 series	125-15 isikhephe segrephite	196
	125-19 isikhephe segrephite	252
	125-21 isikhephe se-grphite	280