SehlahisoaDngodiso
Silicon carbide Wafer Boat e sebelisoa haholo joalo ka sets'oants'o sa liphaephe ts'ebetsong ea phallo ea mocheso o phahameng.
Melemo:
Ho hanyetsa mocheso o phahameng:tšebeliso e tloaelehileng ho 1800 ℃
Boima bo phahameng ba mocheso:e lekanang le thepa ea graphite
Boima bo phahameng:boima ba bobeli ho daemane, boron nitride
Khanyetso ea kutu:asiti e matla le alkali ha e na kutu ho eona, ho hanyetsa kutu ho molemo ho feta tungsten carbide le alumina.
Boima bo bobebe:boima bo tlase, bo haufi le aluminium
Ha ho deformation: coefficient e tlase ea katoloso ea mocheso
Ho hanyetsa mocheso oa mocheso:e khona ho mamella liphetoho tse matla tsa mocheso, e hanela ts'oaetso ea mocheso, 'me e na le ts'ebetso e tsitsitseng
Thepa ea 'Mele ea SiC
Thepa | Boleng | Mokhoa |
Botenya | 3.21 g/cc | Sink-float le dimension |
Mocheso o khethehileng | 0.66 J/g °K | Pulsed laser flash |
Matla a flexural | 450 MPa560 MPa | 4 ntlha e kobehang, RT4 ntlha e kobehang, 1300 ° |
Ho robeha ho thata | 2,94 MPa m1/2 | Microindentation |
Ho thatafala | 2800 | Vicker's, boima ba 500g |
Elastic ModulusYoung's Modulus | 450 GPA430 GPA | 4 pt koba, RT4 pt kobeha, 1300 °C |
Boholo ba lijo-thollo | 2 - 10 µm | SEM |
Thermal Properties of SiC
Thermal Conductivity | 250 W/m °K | Mokhoa oa laser flash, RT |
Katoloso ea Thermal (CTE) | 4.5 x 10-6 °K | Mocheso oa kamore ho fihlela ho 950 °C, dilatometer ea silika |