CVD Silicon Carbide Coated Graphite Ring

Tlhaloso e Khutšoanyane:

VET Energy silicon carbide coated graphite ring ke sehlahisoa se sebetsang hantle se etselitsoeng ho fana ka ts'ebetso e tsitsitseng le e tšepahalang ka nako e telele. E na le ho hanyetsa mocheso o motle haholo le ho tšoana ha mocheso, bohloeki bo phahameng, ho hanyetsa khoholeho ea mobu, e leng se etsang hore e be tharollo e phethahetseng bakeng sa lisebelisoa tsa ho lokisa li-wafer.

Re romelle lengolo-tsoibila Khoasolla e le PDF

Lintlha tsa Sehlahisoa

Li-tag tsa Sehlahisoa

Maemo a Tloaelehileng a Base Graphite Material:

Tekano e Hlahang:	1.85 g/cm3
Ho hanyetsa Motlakase:	11 μΩm
Flexural Strenth:	49 MPa (500kgf/cm2)
Bothata ba Lebōpo:	58
Molora:	<5ppm
Thermal Conductivity:	116 W/mK (100 kcal/mhr-℃)

Re fana ka li-susceptors tse fapaneng le likarolo tsa graphite bakeng sa lisebelisoa tsohle tsa morao-rao tsa epitaxy. Lihlahisoa tsa rona li kenyelletsa li-susceptors tsa barrel bakeng sa li-unit tsa LPE, li-susceptors tsa pancake bakeng sa LPE, CSD, le li-unit tsa Gemini, le li-susceptors tsa wafer tse le 'ngoe bakeng sa likarolo tse kentsoeng le tsa ASM.

Ka ho kopanya tšebelisano e matla le li-OEM tse etelletseng pele, botsebi ba thepa le tsebo ea ho etsa, vet e fana ka moralo o nepahetseng bakeng sa ts'ebeliso ea hau.

VET Energy ke themoetsi oa 'nete oa lihlahisoa tse ikhethileng tsa graphite le silicon carbide tse nang le CVD coating,e ka fana katse fapa-fapanenglikarolo tse ikhethileng bakeng sa indasteri ea semiconductor le photovoltaic. OSehlopha sa ur sa tekheniki se tsoa litsing tse phahameng tsa lipatlisiso tsa lapeng, se ka fana ka litharollo tsa lisebelisoa tse ngata tsa litsebimolemong oa hau.

Flijo tsa lihlahisoa tsa rona:

1. Ho hanyetsa mocheso o phahameng oa oxidation ho fihlela ho 1700℃.
2. Bohloeki bo phahameng leho lumellana ha mocheso
3. Ho hanyetsa kutu e ntle haholo: acid, alkali, letsoai le li-reagents tsa manyolo.
4. Boima bo phahameng, bokaholimo bo kopanetsoeng, likaroloana tse ntle.
5. Bophelo bo bolelele ba tšebeletso le bo tšoarellang haholoanyane

CVD SiC薄膜基本物理性能 Lintho tsa motheo tsa 'mele tsa CVD SiCho roala
性质 / Thepa	典型数值 / Boleng bo Tlwaelehileng
晶体结构 / Sebopeho sa Crystal	FCC mohato oa β多晶，主要為（111）取向
密度 / Ho teteana	3.21 g/cm³
硬度 / Ho thatafala	2500 维氏硬度 (moroalo oa 500g)
晶粒大小 / Mabele SiZe	2 ~ 10μm
纯度 / Bohloeki ba lik'hemik'hale	99.99995%
热容 / Bokhoni ba mocheso	640 J·kg^-1·K^-1
升华温度 / Sublimation Mocheso	2700 ℃
抗弯强度 / Flexural Matla	415 MPa RT 4-ntlha
杨氏模量 / Young's Modulus	430 Gpa 4pt kobeha, 1300 ℃
导热系数 / ThermalBoikhantšo	300Wm^-1·K^-1
热膨胀系数 / Katoloso ea Mocheso(CTE)	4.5×10^-6K^-1