Mokhoa o mocha oa ho kopanya likarolo tsa li-semiconductors tse tšesaane joaloka li-nanometer tse seng kae ha oa fella ka tšibollo ea saense feela empa hape le mofuta o mocha oa transistor bakeng sa lisebelisoa tsa elektronike tse matla a phahameng. Phello, e hatisitsoeng ho Applied Physics Letters, e tsositse thahasello e khōlō.
Katleho ena e bakiloe ke tšebelisano e haufi lipakeng tsa bo-ramahlale ba Univesithi ea Linköping le SweGaN, k'hamphani e qalang ho tsoa lipatlisisong tsa mahlale a thepa ho LiU. Khampani e etsa lisebelisoa tsa elektronike tse entsoeng ka gallium nitride.
Gallium nitride, GaN, ke semiconductor e sebelisoang bakeng sa li-diode tse sebetsang hantle tse hlahisang khanya. Leha ho le joalo, e ka boela ea thusa lits'ebetsong tse ling, tse kang transistors, kaha e khona ho mamella mocheso o phahameng le matla a hona joale ho feta li-semiconductors tse ling tse ngata. Tsena ke thepa ea bohlokoa bakeng sa likarolo tsa elektronike tse tlang, eseng bonyane bakeng sa tse sebelisoang likoloing tsa motlakase.
Mouoane oa Gallium nitride o lumelloa ho kenella holim'a sephaphatha sa silicon carbide, ho etsa seaparo se sesesaane. Mokhoa oo ho lengoang thepa e 'ngoe ea kristale holim'a substrate ea e' ngoe o tsejoa e le "epitaxy." Mokhoa ona o sebelisoa hangata indastering ea semiconductor kaha o fana ka tokoloho e kholo ho khetholla sebopeho sa kristale le sebopeho sa lik'hemik'hale tsa filimi ea nanometer e entsoeng.
Motsoako oa gallium nitride, GaN, le silicon carbide, SiC (tseo ka bobeli li ka mamellang masimo a matla a motlakase), li tiisa hore lipotoloho li loketse likopo tseo ho tsona ho hlokahalang matla a phahameng.
Leha ho le joalo, ho lekana holimo pakeng tsa lisebelisoa tse peli tsa crystalline, gallium nitride le silicon carbide, ho futsanehile. Liathomo li qetella li sa tsamaisane, e leng se lebisang ho hloleheng ha transistor. Sena se rarollotsoe ke lipatlisiso, tse ileng tsa lebisa tharollong ea khoebo, eo ho eona ho ileng ha behoa lesela le mosesaane la nitride ea aluminium pakeng tsa lihlopha tse peli.
Baenjineri ba SweGaN ba hlokometse ka tšohanyetso hore li-transistors tsa bona li ka sebetsana le matla a holimo haholo ho feta kamoo ba neng ba lebelletse, mme qalong ba ne ba sa utloisise lebaka. Karabo e ka fumanoa boemong ba athomo - libakeng tse 'maloa tse mahlonoko tse bohareng ka har'a likarolo.
Bafuputsi ba LiU le SweGaN, ba etelletsoeng pele ke Lars Hultman le Jun Lu oa LiU, ba teng ho Applied Physics Letters tlhaloso ea ketsahalo ena, 'me ba hlalosa mokhoa oa ho etsa li-transistors tse nang le bokhoni bo boholo le ho feta ba ho mamella maqhubu a phahameng.
Bo-rasaense ba sibolotse mokhoa oo pele o neng o sa tsejoe oa epitaxial kgolo oo ba o bitsitseng "transmorphic epitaxial growth." E etsa hore khatello e lipakeng tsa mekhahlelo e fapaneng e kenelle butle-butle ho pholletsa le lihlopha tse 'maloa tsa liathomo. Sena se bolela hore ba ka holisa mekhahlelo e 'meli, gallium nitride le aluminium nitride, ho silicon carbide ka mokhoa oa ho laola boemong ba athomo hore na likarolo li amana joang le tse ling ka thepa. Ka laboratoring ba bontšitse hore thepa e mamella likhahla tse phahameng, ho fihlela ho 1800 V. Haeba motlakase o joalo o ne o ka behoa karolong e tloaelehileng ea silicon-based, litlhase li ne li tla qala ho fofa 'me transistor e tla senyeha.
“Re thoholetsa SweGaN ha e qala ho bapatsa boqapi bona. E bonts'a tšebelisano e ntle le ts'ebeliso ea liphetho tsa lipatlisiso sechabeng. Ka lebaka la kamano e haufi eo re nang le eona le basebetsi-'moho le rona ba nakong e fetileng ba seng ba sebeletsa k'hamphani, lipatlisiso tsa rona li na le phello e potlakileng le kantle ho lefatše la thuto," ho bolela Lars Hultman.
Lisebelisoa tse fanoeng ke Univesithi ea Linköping. Ea mantlha e ngotsoe ke Monica Westman Svenselius. Tlhokomeliso: Litaba li ka hlophisoa ho latela setaele le bolelele.
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Nako ea poso: May-11-2020