Epitaxial Epi Graphite Barrel Susceptor

Epitaxial Epi Graphite Barrel Susceptor

Epitaxial Epi Graphite Barrel Susceptorke sesebelisoa se khethehileng sa tšehetso le ho futhumatsa se sebelisetsoang ho tšoara le ho futhumatsa li-semiconductor substrates nakong ea mekhoa ea tlhahiso e kang Deposition kapa Epitaxy process.

Sebopeho sa eona se kenyelletsa cylindrical kapa sebopeho sa moqomo hanyane, bokaholimo bo na le lipokothong tse ngata kapa sethala sa ho beha li-wafers, e ka ba moralo o tiileng kapa o se nang letho, ho latela mokhoa oa ho futhumatsa.

Mesebetsi ea mantlha ea epitaxial barrel susceptor:

- Ts'ehetso ea Substrate: e ts'oara ka mokhoa o sireletsehileng liphaephe tse ngata tsa semiconductor;
-Mohloli oa mocheso: o fana ka mocheso o phahameng o hlokahalang bakeng sa kholo ka ho futhumatsa;
-Ho lumellana ha mocheso: ho netefatsa ho futhumala ho tšoanang ha li-substrates;
-Potoloho: hangata e potoloha nakong ea kholo ho ntlafatsa ho tšoana ha mocheso le khase.

Molao-motheo o sebetsang oa Epi graphite barrel susceptor:
- Ho epitaxial reactor, susceptor ea barrel e futhumetse mocheso o hlokahalang (ka tloaelo 1000 ℃-1200 ℃ bakeng sa silicon epitaxy);
-The barrel susceptor e potoloha ho etsa bonnete ba hore mocheso o ts'oanang le ho phalla ha khase;
- Likhase tse arabelang li senyeha ka mocheso o phahameng, li etsa likarolo tsa epitaxial holim'a substrate.

Lisebelisoa:
-E sebelisoa haholo bakeng sa kholo ea silicon epitaxial
-E boetse e sebetsa bakeng sa epitaxy ea lisebelisoa tse ling tsa semiconductor tse kang GaAs, InP, joalo-joalo.

VET Energy e sebelisa graphite e hloekileng haholo e nang le CVD-SiC coating ho matlafatsa botsitso ba lik'hemik'hale:

Melemo ea VET Energy Epitaxial Epi Graphite Barrel Susceptor:

-Botsitso bo phahameng ba mocheso;
- Ho lumellana hantle ha mocheso;
-E khona ho sebetsana le li-substrates tse ngata ka nako e le 'ngoe, ho ntlafatsa katleho ea tlhahiso;
-Inert ea lik'hemik'hale, ho boloka tikoloho ea kholo ea bohloeki bo phahameng.