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Waa maxay cilladaha lakabka epitaxial silicon carbide
by admin 24-06-05
Farsamaynta asaasiga ah ee kobaca qalabka SiC epitaxial waa tiknoolajiyada xakamaynta cilladaha marka hore, gaar ahaan tignoolajiyada xakamaynta cilladda ee u nugul cilladda qalabka ama hoos u dhaca kalsoonida. Daraasadda habka cilladaha substrate-ka ee ku fidsan epi-ka ...
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Hadhuudh taagan oo oksaydhaysan iyo tignoolajiyada koritaanka epitaxial-Ⅱ
by admin 24-05-30
2. Kobaca filimka khafiifka ah ee Epitaxial Substrate wuxuu bixiyaa lakabka taageerada jirka ama lakabka korantada ee qalabka korontada ee Ga2O3. Lakabka xiga ee muhiimka ah waa lakabka kanaalka ama lakabka epitaxial ee loo isticmaalo iska caabinta korantada iyo gaadiidka qaada. Si loo kordhiyo korantada burburka oo loo yareeyo korantada ...
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Gallium oxide hal crystal iyo tignoolajiyada koritaanka epitaxial
by admin 24-05-30
Baadhitaanka ballaaran (WBG) semiconductors oo ay matalaan silicon carbide (SiC) iyo gallium nitride (GaN) ayaa helay dareen baahsan. Dadku waxay leeyihiin rajooyin sare oo ku saabsan rajada codsiga ee carbide silicon ee baabuurta korantada iyo korantada, iyo sidoo kale rajada codsiga gallium ...
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Maxay yihiin caqabadaha farsamo ee hortaagan carbide silicon?Ⅱ
by admin 24-05-22
Dhibaatooyinka farsamada ee soosaarida tayada sare leh ee silikoon carbide wafers leh waxqabad xasiloon waxaa ka mid ah: 1) Maadaama kiristaalo ay u baahan yihiin inay ku koraan jawi heerkul sare leh oo daboolan oo ka sarreeya 2000 ° C, shuruudaha xakamaynta heerkulku aad ayey u sarreeyaan; 2) Maadaama silicon carbide uu leeyahay ...
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Waa maxay caqabadaha farsamo ee ku wajahan carbide silicon?
by admin 24-05-22
Jiilka koowaad ee qalabka semiconductor waxaa matalaya silikoon dhaqameed (Si) iyo germanium (Ge), kuwaas oo saldhig u ah soosaarka wareegga isku dhafan. Waxaa si weyn loogu isticmaalaa koronto-yar, soo noqnoqosho hoose, iyo koronto-yar iyo koronto-yaqaano. In ka badan 90% ee wax soo saarka semiconductor...
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Sidee loo sameeyaa budada yar ee SiC?
by admin 24-05-13
SiC single crystal waa koox IV-IV walax semiconductor ah oo ka kooban laba walxood, Si iyo C, oo ku jira saamiga stoichiometric ee 1: 1. Adaggeeda ayaa ka xigta dheemanka kaliya. Yaraynta kaarboon ee habka silicon oxide si loogu diyaariyo SiC waxay inta badan ku salaysan tahay qaacidada falcelinta kiimikada ee soo socota
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Sidee lakabyada epitaxial u caawiyaan qalabka semiconductor?
by admin 24-05-13
Asalka magaca waferka epitaxial Marka hore, aan faafinno fikrad yar: diyaarinta wafer-ka waxaa ka mid ah laba xiriiriye oo waaweyn: diyaarinta substrate iyo habka epitaxial. Substrate-ku waa wafer ka samaysan hal walxo semiconductor. Substrate-ka ayaa si toos ah u gali kara warshadaynta waferka...
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Hordhac u dhigista uumiga kiimikada (CVD) tignoolajiyada dhigista filim khafiif ah
by admin 24-05-06
Kaydinta Uumiga Kiimikada (CVD) waa tignoolajiyada kaydinta filimka khafiifka ah ee muhiimka ah, oo inta badan loo isticmaalo diyaarinta filimo shaqeynaya oo kala duwan iyo agab khafiif ah, waxaana si weyn loogu isticmaalaa wax soo saarka semiconductor iyo qaybaha kale. 1. Mabda'a shaqada ee CVD Habka CVD, horudhac gaas ah (mid ama...
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Sirta "dahab madow" ee ka dambeysa warshadaha semiconductor photovoltaic: rabitaanka iyo ku tiirsanaanta garaafka isostatic
by admin 24-05-06
Garaafyada Isostatic waa walxo aad muhiim u ah sawiradavoltaics iyo semiconductors. Iyada oo kor u kaca degdega ah ee shirkadaha graphite ee gudaha, keli-taliska shirkadaha shisheeye ee Shiinaha waa la jabiyay. Iyadoo cilmi-baaris madax-bannaan oo joogto ah iyo horumarin iyo horumar tignoolajiyadeed, ayaa ...
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