Tiknoolajiyada Laser-ku waxay horseedaa isbeddelka tignoolajiyada farsamaynta substrate-ka silikoon carbide

 

1. Dulmarkasubstrate silikoon carbidefarsamada farsamaynta

Haddasubstrate silikoon carbide Tallaabooyinka habaynta waxa ka mid ah: shiididda goobada dibadda, jeexid, shiidid, shiidid, dhalaalid, nadiifin, iwm Waqtigan xaadirka ah, goyntasubstrates carbide siliconInta badan waa goynta siliga. Goynta silig badan ayaa ah habka ugu wanaagsan ee goynta siliga hadda, laakiin weli waxaa jira dhibaatooyin tayada goynta liidata iyo luminta goynta ballaaran. Luminta goynta siliggu waxay kordhin doontaa korodhka cabbirka substrate-ka, taas oo aan ku habboonaynsubstrate silikoon carbidesoo saarayaasha si ay u gaadhaan dhimista kharashka iyo hagaajinta hufnaanta. In geeddi-socodka goynta8-inch carbide silicone substrates, qaabka dusha sare ee substrate-ka ee lagu helo goynta siligga waa mid liidata, iyo sifooyinka tirooyinka sida WARP iyo BOW ma fiicna.

Goyntu waa tillaabada muhiimka ah ee wax soo saarka substrate-ka. Warshadaha ayaa si joogto ah isku dayaya hababka cusub ee goynta, sida goynta silig dheeman iyo xariijimaha laser. Tignoolajiyada ka saarista laser-ka ayaa aad loo raadiyay dhawaanahan. Soo bandhigida tikniyoolajiyadani waxay yaraynaysaa jarista luminta waxayna hagaajinaysaa waxtarka goynta ee mabda'a farsamada. Xalka xarigga laser wuxuu leeyahay shuruudo sare oo loogu talagalay heerka otomatiga wuxuuna u baahan yahay tignoolajiyada khafiifka ah si ay ula shaqeyso, taas oo la socota jihada horumarinta mustaqbalka ee farsamaynta substrate silicon carbide. Wax-soo-saarka jajabka ee goynta siligga hoobiye-dhaqameedku guud ahaan waa 1.5-1.6. Soo bandhigida tignoolajiyada ka saarista laysarka waxay kordhin kartaa wax-soosaarka cad ilaa 2.0 (tixraac qalabka DISCO). Mustaqbalka, marka qaan-gaarnimada tignoolajiyada xajinta laysarka uu kordho, wax-soo-saarka jeexan ayaa laga yaabaa in la sii wanaajiyo; Isla mar ahaantaana, xoqitaanka laysarka ayaa sidoo kale si weyn u wanaajin kara waxtarka goynta. Marka loo eego cilmi baarista suuqa, hogaamiyaha warshadaha DISCO wuxuu gooyaa jeex qiyaastii 10-15 daqiiqo ah, taas oo aad uga waxtar badan marka loo eego goynta siliga hoobiye ee hadda ee 60 daqiiqo jeex kasta.

Tillaabooyinka geeddi-socodka ee goynta siligga dhaqameed ee substrates carbide silicon waa: silig goyn-qallafsan shiidi-fiin shiidi- dhalleecayn xun iyo dhalaalid ganaax. Ka dib markii habka xarigga laser beddelo goynta silig, habka khafiifinta waxaa loo isticmaalaa in lagu beddelo habka shiidi, taas oo yaraynaysaa khasaaraha of xaleef iyo hagaajinaysaa waxtarka processing. Habka xoqitaanka laser-ka ee goynta, shiididda iyo nadiifinta substrate-ka silikoon carbide wuxuu u qaybsan yahay saddex tallaabo: iskaanka dusha sare ee laser-substrate stripping-ingot flattening: iskaanka dusha laserku waa in la isticmaalo garaaca laser ultrafast si loo farsameeyo dusha sare ee ingot si loo sameeyo wax laga beddelay. lakabka gudaha godka; substrate-ka-saarista waa in la kala saaro substrate-ka ka sarreeya lakabka wax laga beddelay ee ka soo baxa hababka jireed; balaadhinta ingot waa in laga saaro lakabka la beddelay ee dusha sare ee mareenka si loo hubiyo fidnaanta dusha sare ee la galiyay.
Silicon carbide habka xajinta laser

 

2. Horumarka caalamiga ah ee tignoolajiyada xajinta laser-ka iyo shirkadaha ka qaybqaata warshadaha

Habka laysarka laser-ka ayaa markii ugu horreysay qaatay shirkado dibadda ah: 2016, DISCO ee Japan waxay soo saartay tignoolajiyada cusub ee laysarka ee KABRA, taas oo samaysa lakabka kala-soocidda oo kala saarta waferrada qoto dheer ee la cayimay iyadoo si joogto ah u iftiiminaysa laysarka leysarka, kaas oo loo isticmaali karo noocyo kala duwan. noocyada SiC ingots. Bishii Noofambar 2018, Infineon Technologies waxay heshay Siltectra GmbH, bilawga jarista wafer, 124 milyan euro. Midda dambe waxa ay horumarisay habka Qabow Kala qaybsanaanta, kaas oo adeegsada tignoolajiyada laysarka ee patented si loo qeexo kala-goynta kala-goynta, jaakad qalabyada polymer-ka gaarka ah, nidaamka xakamaynta qaboojinta walaaca, agabka si sax ah u kala qaybsan, oo shiid oo nadiif ah si loo gaadho goynta wafer.

Sanadihii la soo dhaafay, qaar ka mid ah shirkadaha gudaha ayaa sidoo kale soo galay warshadaha qalabka laser-ka: shirkadaha ugu waaweyn waa Han's Laser, Delong Laser, West Lake Instrument, Sirdoonka Universal, China Electronics Technology Group Corporation iyo Machadka Semiconductors ee Akademiyada Sayniska ee Shiinaha. Waxaa ka mid ah, shirkadaha liiska ku jira ee Han's Laser iyo Delong Laser waxay ku jireen qaabayn muddo dheer, waxaana alaabtooda hubinaya macaamiisha, laakiin shirkadu waxay leedahay khadadka wax soo saarka oo badan, qalabka laser-ka ayaa ah mid ka mid ah ganacsigooda oo kaliya. Alaabooyinka xiddigaha soo koraya sida West Lake Instrument waxay gaadheen shixnadaha dalabka rasmiga ah; Intelligence Universal, China Electronics Technology Group Corporation 2, Machadka Semiconductors ee Akadeemiyada Sayniska ee Shiinaha iyo shirkado kale ayaa sidoo kale sii daayay horumarka qalabka.

 

3. Waxyaalaha wadista ee horumarinta tignoolajiyada xariifinta laysarka iyo laxanka hordhaca suuqa

Hoos u dhigista qiimaha 6-inji silikoon carbide substrates ayaa horseedaya horumarinta tignoolajiyada xoqitaanka laysarka: Waqtigan xaadirka ah, qiimaha 6-inch silicon carbide substrates wuxuu hoos uga dhacay 4,000 yuan / gabal, isagoo ku soo dhawaanaya qiimaha wax soo saarka qaar ka mid ah. Habka xarigga laysarka wuxuu leeyahay wax-soo-saar sare iyo faa'iido xoog leh, taas oo u horseedaysa heerka dhexgalka tignoolajiyada xajinta laysarka si uu u kordhiyo.

Khafiifinta 8-inch substrates silicon carbide substrates waxay horseed u tahay horumarinta tignoolajiyada xoqida laysarka: Dhumucda 8-inch substrates carbide silikoon hadda waa 500um, waxayna u koraysaa dhumuc dhan 350um. Habka goynta siliggu ma aha mid wax ku ool ah 8-inch silicon carbide processing (dusha substrate ma fiicna), iyo qiyamka BOW iyo WARP ayaa si weyn u xumaaday. Xarigga Laser-ka waxaa loo arkaa inay tahay tignoolajiyada lagama maarmaanka u ah farsamaynta 350um silikoon carbide substrate, kaas oo u horseedaya heerka gelitaanka tignoolajiyada xarigga laysarka inuu kordho.

Rajada laga filayo suuqa: SiC substrate laysarka qalabaynta ayaa ka faa'iidey balaarinta 8-inch SiC iyo dhimista qiimaha 6-inch SiC. Meesha muhiimka ah ee warshadaha ee hadda jirta ayaa soo dhowaanaysa, horumarinta warshadaha ayaa si weyn loo dardargelin doonaa.