IC Single-Crystal Silicon Epitaxy

Sharaxaad Gaaban:

Meesha Asal ahaan:Shiinaha

Qaab dhismeedka Crystal:wajiga FCCβ

Cufnaanta:3.21 g/cm;

Adag:2500 Vickers;

Cabirka Hadhuudhka:2 ~ 10μm;

Nadiifadda Kiimikada:99.99995%;

Awoodda kulaylka:640J · kg-1·K-1;

Heerkulka Sublimation:2700 ℃;

Xoogga Felexural:415 Mpa (RT 4-dhibcood);

Modulka dhalinyarada:430 Gpa (4pt laab, 1300 ℃);

Balaadhinta kulaylka (CTE):4.5 10-6K-1;

Habdhaqanka Kulaylka:300 (W/MK);

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Faahfaahinta Alaabta

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Sharaxaada Alaabta

Shirkadeena waxay bixisaa adeegyada habka daahan SiC ee habka CVD ee dusha sare ee graphite, ceramics iyo alaabta kale, si gaasaska gaarka ah ee ay ku jiraan kaarboon iyo silikoon ay uga falceliyaan heerkulka sare si ay u helaan nadiifnimada sare ee SiC molecules, molecules deposited on the dusha alaabta dahaarka ah, samaynta lakabka ilaalinta SIC.

Tilmaamaha ugu muhiimsan:

1. Iska caabbinta oksaydhka heerkulka sare:

caabbinta oksaydhisku weli aad bay u wanaagsan tahay marka heerkulku uu gaadho 1600 C.

2. Nadiifin sare: oo ay samaysay uumiga kiimikaad ee hoos yimaada xaalad koloriineed heerkul sare ah.

3. Iska caabinta nabaadguurka: adkaanta sare, dusha sare, qaybo yaryar.

4. Iska caabinta daxalka: acid, alkali, milix iyo reagents organic.

Tilmaamaha ugu Muhiimsan ee Dahaarka CVD-SIC

Guryaha SiC-CVD
Dhismaha Crystal	FCC β wejiga
Cufnaanta	g/cm³	3.21
Adag	Vickers adag	2500
Cabirka Hadhuudhka	μm	2 ~ 10
Nadiifnimada Kiimikada	%	99.99995
Awoodda kulaylka	J·k-1 ·K-1	640
Heerkulka Sublimation	℃	2700
Xoogga Felexural	MPa (RT 4-dhibcood)	415
Dhallinta Modul	Gpa (4pt laab, 1300 ℃)	430
Balaadhinta kulaylka (CTE)	10-6K-1	4.5
Dhaqdhaqaaqa kulaylka	(W/mK)	300