GaN on Silicon Wafer ee RF

Sharaxaad Gaaban:

GaN ee Silicon Wafer ee RF, oo ay bixiso VET Energy, waxaa loogu talagalay in lagu taageero codsiyada soo noqnoqda raadiyaha-sare (RF). Waferradani waxay isku daraan faa'iidooyinka Gallium Nitride (GaN) iyo Silicon (Si) si ay u bixiyaan kulaylka wanaagsan iyo hufnaanta awoodda sare, iyaga oo ka dhigaya kuwo ku habboon qaybaha RF ee loo isticmaalo isgaarsiinta, radar, iyo nidaamyada satellite-ka. Tamarta VET waxay hubisaa in wafer kasta uu buuxiyo heerarka waxqabadka ugu sarreeya ee looga baahan yahay samaynta semiconductor sare.


Faahfaahinta Alaabta

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VET Energy GaN ee Silicon Wafer waa xal semiconductor gees-goyn ah oo si gaar ah loogu talagalay codsiyada soo noqnoqda raadiyaha (RF). Iyada oo epitaxially koraysa gallium nitride-tayada sare leh (GaN) ee substrate silikoon, VET Energy waxay soo bandhigtaa kharash-ool iyo waxqabad sare oo qalab RF ah oo ballaaran.

GaNkan waferka Silicon wuxuu la jaan qaadayaa agabyada kale sida Si Wafer, SiC Substrate, SOI Wafer, iyo SiN Substrate, taasoo kordhinaysa wax-ku-oolnimada hababka kala duwan ee wax-soo-saarka. Intaa waxaa dheer, waxaa loo habeeyay in lagu isticmaalo Epi Wafer iyo agabyo horumarsan sida Gallium Oxide Ga2O3 iyo AlN Wafer, kuwaas oo sii wanaajinaya codsiyadooda elektiroonigga awoodda sare leh. Wafers-yada waxaa loogu talagalay is dhexgalka aan kala go 'lahayn ee nidaamyada wax soo saarka iyadoo la adeegsanayo maaraynta cajaladaha caadiga ah si ay u sahlanaato isticmaalka iyo kordhinta waxtarka wax soo saarka.

VET Energy waxa ay bixisaa faylal dhammaystiran oo ah substrates semiconductor, oo ay ku jiraan Si Wafer, SiC Substrate, SOI Wafer, SiN Substrate, Epi Wafer, Gallium Oxide Ga2O3, iyo AlN Wafer. Khadkayaga alaabada kala duwan ayaa daboolaya baahiyaha codsiyada kala duwan ee elektiroonigga ah, laga bilaabo korantada korantada ilaa RF iyo optoelectronics.

GaN on Silicon Wafer waxay bixisaa faa'iidooyin dhowr ah codsiyada RF:

       • Waxqabadka soo noqnoqda ee sarreeya:GaN's bandgap ballaaran iyo dhaqdhaqaaqa sare ee elektaroonigga ah ayaa awood u siinaya hawlgal joogto ah, taas oo ka dhigaysa mid ku habboon 5G iyo hababka kale ee isgaarsiinta xawaaraha sare.
     • Cufnaanta awoodda sare:Aaladaha GaN waxay xamili karaan cufnaanta awoodda sare marka la barbar dhigo aaladaha dhaqameed ee ku saleysan silikoon, taasoo u horseedaysa nidaamyo RF is haysta oo hufan.
       Isticmaalka koronto yar:Aaladaha GaN waxay muujinayaan isticmaalka tamarta hoose, taasoo keentay hufnaanta tamarta oo hagaagtay iyo kulaylka oo yaraada.

Codsiyada:

       Isgaarsiinta wireless-ka ee 5G:GaN on Wafers-ka Silicon waxay lama huraan u yihiin dhisitaanka saldhigyada 5G ee waxqabadka sare leh iyo aaladaha mobilada.
     Hababka raadaarka:Cod-weyneyaasha RF-ku-saleysan ee GaN waxaa loo adeegsadaa nidaamyada radar-ka waxtarkooda sare iyo baaxadda ballaaran.
   • Isgaarsiinta satellite-ka:Aaladaha GaN waxay awood u siinayaan nidaamyada isgaarsiinta dayax-gacmeedka oo awood sare leh iyo soo noqnoqonaya.
     • Qalabka elektarooniga ah:Qaybaha RF-ku-saleysan ee GaN waxaa loo adeegsadaa codsiyada militariga sida dagaalka elektiroonigga ah iyo nidaamyada radar.

Tamarta VET waxay ku siisaa GaN la beddeli karo oo ku saabsan waferrada Silicon si ay u buuxiso shuruudahaaga gaarka ah, oo ay ku jiraan heerarka doping ee kala duwan, dhumucda, iyo cabbirrada waferka. Kooxdayada khabiirka ah waxay bixiyaan taageero farsamo iyo adeeg iibka kadib si loo xaqiijiyo guushaada.

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QEEXIDDA WAFERING

*n-Pm=n-nooca Pm-Grade,n-Ps=n-nooca Ps-Grade,Sl=Semi-lnsulating

Shayga

8-inch

6-inch

4-inji

nP

n-Pm

n-Ps

SI

SI

TTV(GBIR)

≤6um

≤6um

Qaanso(GF3YFCD) -Qiimaha saxda ah

≤15μm

≤15μm

≤25μm

≤15μm

Warp(GF3YFER)

≤25μm

≤25μm

≤40μm

≤25μm

LTV(SBIR)-10mmx10mm

<2μm

Wafer Edge

Beveling

DHULKA DHAMMAAN

*n-Pm=n-nooca Pm-Grade,n-Ps=n-nooca Ps-Grade,Sl=Semi-lnsulating

Shayga

8-inch

6-inch

4-inji

nP

n-Pm

n-Ps

SI

SI

Dhamaystir dusha sare

Polish indhaha laba-geesoodka ah,Si- Waji CMP

Dusha sareynta

(10um x 10um) Si-FaceRa≤0.2nm
C-Waji Ra≤ 0.5nm

(5umx5um) Si-Face Ra≤0.2nm
C-Face Ra≤0.5nm

Chips Edge

Midna Lama ogola (dhererka iyo ballaca≥0.5mm)

Indents

Midna lama ogola

xoqid (Si-Waji)

Qty.≤5, Wadar ah
Dhererka≤0.5× dhexroorka wafer

Qty.≤5, Wadar ah
Dhererka≤0.5× dhexroorka wafer

Qty.≤5, Wadar ah
Dhererka≤0.5× dhexroorka wafer

dildilaaca

Midna lama ogola

Ka saarida gees

3mm

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