Noocan 6 Inch N Nooca SiC Wafer waxaa loogu talagalay in lagu wanaajiyo waxqabadka xaaladaha ba'an, taasoo ka dhigaysa doorasho ku habboon codsiyada u baahan awood sare iyo iska caabbinta heerkulka. Alaabooyinka muhiimka ah ee la xidhiidha waferkan waxaa ka mid ah Si Wafer, SiC Substrate, SOI Wafer, iyo SiN Substrate. Qalabkani waxay xaqiijinayaan waxqabadka ugu fiican ee hababka wax soo saarka semiconductor ee kala duwan, kuwaas oo awood u siinaya labadaba tamar-ku-ool iyo waara.
Shirkadaha la shaqeeya Epi Wafer, Gallium Oxide Ga2O3, Cassette, ama AlN Wafer, VET Energy's 6 Inch N Nooca SiC Wafer waxay siisaa aasaaska lagama maarmaanka u ah horumarinta wax soo saarka cusub. Haddi ay ku jirto qalabka elegtarooniga ah ee awooda sare leh ama tignoolajiyada RF ugu danbeysa, waferradani waxa ay xaqiijiyaan dhaqdhaqaaqa aad u fiican iyo iska caabinta kulaylka ugu yar, iyaga oo riixaya xuduudaha hufnaanta iyo waxqabadka.
QEEXIDDA WAFERING
*n-Pm=n-nooca Pm-Grade,n-Ps=n-nooca Ps-Grade,Sl=Semi-lnsulating
Shayga | 8-inch | 6-inch | 4-inji | ||
nP | n-Pm | n-Ps | SI | SI | |
TTV(GBIR) | ≤6um | ≤6um | |||
Qaanso(GF3YFCD) -Qiimaha saxda ah | ≤15μm | ≤15μm | ≤25μm | ≤15μm | |
Warp(GF3YFER) | ≤25μm | ≤25μm | ≤40μm | ≤25μm | |
LTV(SBIR)-10mmx10mm | <2μm | ||||
Wafer Edge | Beveling |
DHULKA DHAMMAAN
*n-Pm=n-nooca Pm-Grade,n-Ps=n-nooca Ps-Grade,Sl=Semi-lnsulating
Shayga | 8-inch | 6-inch | 4-inji | ||
nP | n-Pm | n-Ps | SI | SI | |
Dhamaystir dusha sare | Polish indhaha laba-geesoodka ah,Si- Waji CMP | ||||
Dusha sareynta | (10um x 10um) Si-FaceRa≤0.2nm | (5umx5um) Si-Face Ra≤0.2nm | |||
Chips Edge | Midna Lama ogola (dhererka iyo ballaca≥0.5mm) | ||||
Indents | Midna lama ogola | ||||
xoqid (Si-Waji) | Qty.≤5, Wadar ah | Qty.≤5, Wadar ah | Qty.≤5, Wadar ah | ||
dildilaaca | Midna lama ogola | ||||
Ka saarida gees | 3mm |