4 inch GaAs Wafer

Sharaxaad Gaaban:

VET Energy 4 inch GaAs wafer waa substrate-ka saafiga sare leh ee semiconductor caan ku ah sifooyinkiisa elegtarooniga ah ee ugu wanaagsan, taasoo ka dhigaysa doorasho ku habboon codsiyo kala duwan. Tamarta VET waxay shaqaaleysiisaa farsamooyin korriin kristaan ​​ah oo horumarsan si ay u soo saarto wafers GaAs oo leh lebis gaar ah, cufnaanta cilladda hoose, iyo heerarka doping ee saxda ah.


Faahfaahinta Alaabta

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4 Inch GaAs Wafer ka VET Energy waa shay lagama maarmaan u ah xawaaraha sare iyo aaladaha optoelectronic, oo ay ku jiraan amplifiers RF, LEDs, iyo unugyada qorraxda. Wafers-yadan waxaa lagu yaqaan dhaqdhaqaaqooda elektaroonigga ah ee sarreeya iyo awoodda ay ugu shaqeeyaan xawliyada sare, iyaga oo ka dhigaya qayb muhiim ah codsiyada semiconductor sare. Tamarta VET waxay xaqiijisaa waferrada tayada sare leh ee GaAs oo leh dhumuc isku mid ah iyo cilladaha ugu yar, oo ku habboon noocyo badan oo habab abuur ah oo dalbanaya.

Kuwan 4 Inch GaAs Wafers waxay la jaan qaadayaan agabka semiconductor ee kala duwan sida Si Wafer, SiC Substrate, SOI Wafer, iyo SiN Substrate, taasoo ka dhigaysa mid la jaan qaadi kara is dhexgalka qalabyada kala duwan. Haddi loo isticmaalo wax soo saarka Epi Wafer ama ay weheliyaan agabka goynta sida Gallium Oxide Ga2O3 iyo AlN Wafer, waxay bixiyaan aasaas la isku halayn karo oo loogu talagalay elektiroonigga jiilka soo socda. Intaa waxaa dheer, wafersyadu waxay si buuxda ula jaan qaadayaan hababka maaraynta ku salaysan Cassette, iyaga oo hubinaya hawlgallada siman ee cilmi-baarista iyo deegaanka wax soo saarka ee sarreeya.

VET Energy waxa ay bixisaa faylal dhammaystiran oo ah substrates semiconductor, oo ay ku jiraan Si Wafer, SiC Substrate, SOI Wafer, SiN Substrate, Epi Wafer, Gallium Oxide Ga2O3, iyo AlN Wafer. Khadkayaga alaabada kala duwan ayaa daboolaya baahiyaha codsiyada kala duwan ee elektiroonigga ah, laga bilaabo korantada korantada ilaa RF iyo optoelectronics.

VET Energy waxay bixisaa wafers GaAs la beddeli karo si ay u buuxiso shuruudahaaga gaarka ah, oo ay ku jiraan heerarka doping ee kala duwan, hanuuninta, iyo dhamaystirka dusha sare. Kooxdayada khabiirka ah waxay bixiyaan taageero farsamo iyo adeeg iibka kadib si loo xaqiijiyo guushaada.

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QEEXIDDA WAFERING

*n-Pm=n-nooca Pm-Grade,n-Ps=n-nooca Ps-Grade,Sl=Semi-lnsulating

Shayga

8-inch

6-inch

4-inji

nP

n-Pm

n-Ps

SI

SI

TTV(GBIR)

≤6um

≤6um

Qaanso(GF3YFCD) -Qiimaha saxda ah

≤15μm

≤15μm

≤25μm

≤15μm

Warp(GF3YFER)

≤25μm

≤25μm

≤40μm

≤25μm

LTV(SBIR)-10mmx10mm

<2μm

Wafer Edge

Beveling

DHULKA DHAMMAAN

*n-Pm=n-nooca Pm-Grade,n-Ps=n-nooca Ps-Grade,Sl=Semi-lnsulating

Shayga

8-inch

6-inch

4-inji

nP

n-Pm

n-Ps

SI

SI

Dhamaystir dusha sare

Polish indhaha laba-geesoodka ah,Si- Waji CMP

Dusha sareynta

(10um x 10um) Si-FaceRa≤0.2nm
C-Waji Ra≤ 0.5nm

(5umx5um) Si-Face Ra≤0.2nm
C-Face Ra≤0.5nm

Chips Edge

Midna Lama ogola (dhererka iyo ballaca≥0.5mm)

Indents

Midna lama ogola

xoqid (Si-Waji)

Qty.≤5, Wadar ah
Dhererka≤0.5× dhexroorka wafer

Qty.≤5, Wadar ah
Dhererka≤0.5× dhexroorka wafer

Qty.≤5, Wadar ah
Dhererka≤0.5× dhexroorka wafer

dildilaaca

Midna lama ogola

Ka saarida gees

3mm

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