Silicon Carbide (SiC) Epitaxial Wafer

Tsanangudzo Pfupi:

Iyo Silicon Carbide (SiC) Epitaxial Wafer kubva kuVET Energy ndeyepamusoro-inoshanda substrate yakagadzirirwa kusangana nezvinodiwa zvechizvarwa chinotevera simba uye RF zvishandiso. VET Energy inova nechokwadi chekuti epitaxial wafer yega yega inogadzirwa zvine hungwaru kuti ipe yepamusoro yekupisa conductivity, breakdown voltage, uye mutakuri wekufamba, zvichiita kuti ive yakanakira maapplication akadai semota dzemagetsi, 5G kutaurirana, uye yakakwirira-inoshanda magetsi emagetsi.


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VET Energy silicon carbide (SiC) epitaxial wafer ndeyepamusoro-inoshanda yakafara bandgap semiconductor zvinhu zvine yakanakisa kupisa tembiricha kuramba, yakakwirira frequency uye yakakwirira simba maitiro. Iyo yakanaka substrate yechizvarwa chitsva chemagetsi zvigadzirwa zvemagetsi. VET Energy inoshandisa advanced MOCVD epitaxial tekinoroji kukura-yemhando yepamusoro SiC epitaxial layers paSiC substrates, ichiva nechokwadi chekushanda kwakanaka uye kusachinja-chinja kwewafer.

Yedu Silicon Carbide (SiC) Epitaxial Wafer inopa yakanakisa kuenderana neyakasiyana semiconductor zvinhu zvinosanganisira Si Wafer, SiC Substrate, SOI Wafer, uye SiN Substrate. Iine yakasimba epitaxial layer, inotsigira maitiro epamberi senge Epi Wafer kukura uye kubatanidzwa nezvinhu zvakaita seGallium Oxide Ga2O3 uye AlN Wafer, kuve nechokwadi chekushandiswa kwakasiyana-siyana mumatekinoroji akasiyana. Yakagadzirwa kuti ienderane neindasitiri-yakajairwa Cassette inobata masisitimu, inova nechokwadi chekushanda uye kurongeka mashandiro munzvimbo dze semiconductor yekugadzira.

VET Energy's chigadzirwa mutsara haina kuganhurirwa kuSiC epitaxial wafers. Isu tinopawo zvakasiyana-siyana zve semiconductor substrate zvinhu, zvinosanganisira Si Wafer, SiC Substrate, SOI Wafer, SiN Substrate, Epi Wafer, nezvimwewo. Pamusoro pezvo, tiri kushingairira kugadzira zvitsva zvakafara bandgap semiconductor zvinhu, zvakaita seGallium Oxide Ga2O3 neAlN. Wafer, kusangana neramangwana simba remagetsi indasitiri yekuda kwepamusoro mashandiro emidziyo.

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WAFERING SECIFICATIONS

*n-Pm=n-type Pm-Giredhi,n-Ps=n-type Ps-Giredhi,Sl=Semi-lnsulating

Item

8-Inji

6-Inji

4-inch

nP

n-Pm

n-Mapisarema

SI

SI

TTV(GBIR)

≤6um

≤6um

Bow(GF3YFCD)-Absolute Value

≤15μm

≤15μm

≤25μm

≤15μm

Warp(GF3YFER)

≤25μm

≤25μm

≤40μm

≤25μm

LTV(SBIR) -10mmx10mm

<2μm

Wafer Edge

Beveling

SURFACE FINISH

*n-Pm=n-type Pm-Giredhi,n-Ps=n-type Ps-Giredhi,Sl=Semi-lnsulating

Item

8-Inji

6-Inji

4-inch

nP

n-Pm

n-Mapisarema

SI

SI

Surface Finish

Kaviri divi Optical Polish, Si- Face CMP

SurfaceRoughness

(10um x 10um) Si-FaceRa≤0.2nm
C-Face Ra≤ 0.5nm

(5umx5um) Si-Face Ra≤0.2nm
C-Face Ra≤0.5nm

Edge Chips

Hapana Inobvumidzwa (kureba nehupamhi≥0.5mm)

Indents

Hapana Inobvumirwa

Makwara (Si-Face)

Uk.≤5,Kuwedzera
Kureba≤0.5×wafer dhayamita

Uk.≤5,Kuwedzera
Kureba≤0.5×wafer dhayamita

Uk.≤5,Kuwedzera
Kureba≤0.5×wafer dhayamita

Mitswe

Hapana Inobvumirwa

Kusabatanidzwa kumucheto

3mm

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