VET Energy silicon carbide (SiC) epitaxial wafer ndeyepamusoro-inoshanda yakafara bandgap semiconductor zvinhu zvine yakanakisa kupisa tembiricha kuramba, yakakwirira frequency uye yakakwirira simba maitiro. Iyo yakanaka substrate yechizvarwa chitsva chemagetsi zvigadzirwa zvemagetsi. VET Energy inoshandisa advanced MOCVD epitaxial tekinoroji kukura-yemhando yepamusoro SiC epitaxial layers paSiC substrates, ichiva nechokwadi chekushanda kwakanaka uye kusachinja-chinja kwewafer.
Yedu Silicon Carbide (SiC) Epitaxial Wafer inopa yakanakisa kuenderana neyakasiyana semiconductor zvinhu zvinosanganisira Si Wafer, SiC Substrate, SOI Wafer, uye SiN Substrate. Iine yakasimba epitaxial layer, inotsigira maitiro epamberi senge Epi Wafer kukura uye kubatanidzwa nezvinhu zvakaita seGallium Oxide Ga2O3 uye AlN Wafer, kuve nechokwadi chekushandiswa kwakasiyana-siyana mumatekinoroji akasiyana. Yakagadzirwa kuti ienderane neindasitiri-yakajairwa Cassette inobata masisitimu, inova nechokwadi chekushanda uye kurongeka mashandiro munzvimbo dze semiconductor yekugadzira.
VET Energy's chigadzirwa mutsara haina kuganhurirwa kuSiC epitaxial wafers. Isu tinopawo zvakasiyana-siyana zve semiconductor substrate zvinhu, zvinosanganisira Si Wafer, SiC Substrate, SOI Wafer, SiN Substrate, Epi Wafer, nezvimwewo. Pamusoro pezvo, tiri kushingairira kugadzira zvitsva zvakafara bandgap semiconductor zvinhu, zvakaita seGallium Oxide Ga2O3 neAlN. Wafer, kusangana neramangwana simba remagetsi indasitiri yekuda kwepamusoro mashandiro emidziyo.
WAFERING SECIFICATIONS
*n-Pm=n-type Pm-Giredhi,n-Ps=n-type Ps-Giredhi,Sl=Semi-lnsulating
Item | 8-Inji | 6-Inji | 4-inch | ||
nP | n-Pm | n-Mapisarema | SI | SI | |
TTV(GBIR) | ≤6um | ≤6um | |||
Bow(GF3YFCD)-Absolute Value | ≤15μm | ≤15μm | ≤25μm | ≤15μm | |
Warp(GF3YFER) | ≤25μm | ≤25μm | ≤40μm | ≤25μm | |
LTV(SBIR) -10mmx10mm | <2μm | ||||
Wafer Edge | Beveling |
SURFACE FINISH
*n-Pm=n-type Pm-Giredhi,n-Ps=n-type Ps-Giredhi,Sl=Semi-lnsulating
Item | 8-Inji | 6-Inji | 4-inch | ||
nP | n-Pm | n-Mapisarema | SI | SI | |
Surface Finish | Kaviri divi Optical Polish, Si- Face CMP | ||||
SurfaceRoughness | (10um x 10um) Si-FaceRa≤0.2nm | (5umx5um) Si-Face Ra≤0.2nm | |||
Edge Chips | Hapana Inobvumidzwa (kureba nehupamhi≥0.5mm) | ||||
Indents | Hapana Inobvumirwa | ||||
Makwara (Si-Face) | Uk.≤5,Kuwedzera | Uk.≤5,Kuwedzera | Uk.≤5,Kuwedzera | ||
Mitswe | Hapana Inobvumirwa | ||||
Kusabatanidzwa kumucheto | 3mm |