Silicon-yakavakirwa GaN Epitaxy

Silicon-based GaN Epitaxy Featured Image

Tsanangudzo Pfupi:

Nzvimbo Yekwakabva:China

Chimiro cheCrystal:FCCβ chikamu

Density:3.21 g/cm

Kuoma:2500 Vickers

Saizi yezviyo:2~10μm

Chemical Purity:99.99995%

Kugona Kupisa:640J·kg-1·K-1

Sublimation Temperature:2700 ℃

Felexural Strength:415 Mpa (RT 4-Point)

Young's Modulus:430 Gpa (4pt bend, 1300 ℃)

Kuwedzera Kwekupisa (CTE):4.5 10-6K-1

Thermal conductivity:300 (W/MK)

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Product Detail

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Product Description

Kambani yedu inopa SiC yekuvhara maitiro masevhisi neCVD nzira pamusoro pegraphite, ceramics uye zvimwe zvinhu, kuitira kuti akakosha magasi ane kabhoni nesilicon aite pakupisa kwepamusoro kuti awane kuchena kwakanyanya kweSiC mamorekuru, mamorekuru akaiswa pamusoro pezvinhu zvakavharwa, kugadzira SIC inodzivirira layer.

Main features:

1. High tembiricha oxidation kuramba:

iyo oxidation kuramba ichiri yakanaka kwazvo kana tembiricha yakakwira kusvika 1600 C.

2. High kuchena : yakagadzirwa nemakemikari vapor deposition pasi pekushisa kwakanyanya kweklorination mamiriro.

3. Erosion resistance: high hardness, compact surface, fine particles.

4. Corrosion resistance: acid, alkali, munyu uye organic reagents.

Zvikuru Zvinotsanangurwa zveCVD-SIC Coating

SiC-CVD Properties
Crystal Structure	FCC β chikamu
Density	g/cm³	3.21
Kuoma	Vickers kuoma	2500
Saizi yezviyo	μm	2~10
Chemical Purity	%	99.99995
Heat Capacity	J·kg-1 ·K-1	640
Sublimation Temperature	℃	2700
Felexural Strength	MPa (RT 4-poindi)	415
Young's Modulus	Gpa (4pt bend, 1300 ℃)	430
Kuwedzera kweThermal (CTE)	10-6K-1	4.5
Thermal conductivity	(W/mK)	300