SiC Coating/Coated Graphite Substrate/Tray yeSemiconductor

Tsanangudzo Pfupi:

VET Energy SiC Coated Graphite Susceptor yeEpitaxial Kukura chigadzirwa chepamusoro-soro chakagadzirirwa kupa kunoenderana uye kwakavimbika kuita kwenguva yakareba. Iyo ine yakanyanya kunaka kupisa kupisa uye kufananidzwa kwekupisa, kuchena kwepamusoro, kusamira kwevhu, zvichiita kuti ive mhinduro yakakwana yewafer processing application.


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Product Tags

SiC yakanamwa / yakavharwa yeGraphite susceptor yeSemiconductor
 
TheSiC Coated Graphite Substratendeye yakasimba uye inoshanda mhinduro yakagadzirirwa kusangana nekuomarara kwezvinodiwa zveiyo semiconductor kugadzirisa indasitiri. Inoratidzira chidimbu chepamusoro-kuchenasilicon carbide (SiC) kupfeka, iyi substrate inopa kugadzikana kwekupisa kwekupisa, kusagadzikana kweoxidation, uye hupenyu hwesevhisi hurefu, huchiita kuti ive yakanakira maapplication muMOCVD maitiro, graphite wafer carriers, uye dzimwe nzvimbo dzepamusoro-tembiricha.

 Features: 
· Yakanakisa Thermal Shock Resistance
· Yakanakisa Physical Shock Resistance
· Yakanakisa Chemical Resistance
· Super High Kuchena
· Kuwanikwa muComplex Shape
·Inoshandiswa pasi peOxidizing Atmosphere

Application:

3

Zvigadzirwa uye Zvakanakira:

1. Superior Thermal Resistance:Nekuchena kwepamusoroSiC coating, iyo substrate inomira kutonhora kwakanyanya, kuve nechokwadi chekushanda kwakafanana munzvimbo dzinoda senge epitaxy uye semiconductor kugadzira.

2. Enhanced Durability:Iyo SiC yakavharwa magirafu zvikamu zvakagadzirirwa kuramba makemikari ekuora uye oxidation, ichiwedzera hupenyu hweiyo substrate kana ichienzaniswa neyakajairwa graphite substrates.

3. Vitreous Coated Graphite:Iyo yakasarudzika vitreous chimiro cheSiC coatinginopa yakanakisa kuoma kwepamusoro, kuderedza kusakara uye kubvarura panguva yekupisa-yepamusoro kugadzirisa.

4. High Purity SiC Coating:Yedu substrate inovimbisa kushomeka kusvibiswa mune inonzwisisika semiconductor maitiro, ichipa kuvimbika kune maindasitiri anoda kusimba kwezvinhu kuchena.

5. Wide Market Application:TheSiC yakavharwa graphite susceptormusika unoramba uchikura sekudiwa kwezvigadzirwa zvepamberi zveSiC zvakavharwa mukugadzira semiconductor zvichiwedzera, ichimisa iyi substrate sechinhu chakakosha mumusika wegraphite wafer carrier musika uye silicon carbide yakavharwa graphite trays musika.

Yakajairika Properties yeBase Graphite Material:

Inooneka Density: 1.85 g/cm3
Electrical Resistivity: 11 μΩm
Flexural Strenth: 49 MPa (500kgf/cm2)
Shore Hardness: 58
Madota: <5ppm
Thermal Conductivity: 116 W/mK (100 kcal/mhr-℃)

 

CVD SiC薄膜基本物理性能

Basic zvemuviri zvimiro zveCVD SiCcoating

性质 / Property

典型数值 / Typical Value

晶体结构 / Crystal Structure

FCC β phase 多晶,主要為(111)取向)

密度 / Density

3.21 g/cm³

硬度 / Kuoma

2500 维氏硬度 (500g mutoro)

晶粒大小 / Grain SiZe

2~10μm

纯度 / Chemical Purity

99.99995%

热容 / Heat Capacity

640 J·kg-1·K-1

升华温度 / Sublimation Temperature

2700 ℃

抗弯强度 / Flexural Strength

415 MPa RT 4-poindi

杨氏模量 / Young's Modulus

430 Gpa 4pt bend, 1300 ℃

导热系数 / Thermal Conductivity

300Wm-1·K-1

热膨胀系数 / Thermal Expansion(CTE)

4.5 × 10-6K-1

1

2

 

 

VET Energy ndiyo chaiyo inogadzira yakagadziridzwa magirafu uye silicon carbide zvigadzirwa zvine machira akasiyana seSiC coating, TaC coating, girazi kabhoni coating, pyrolytic kabhoni coating, nezvimwewo, inogona kupa akasiyana akagadziridzwa zvikamu zve semiconductor uye photovoltaic indasitiri.

Chikwata chedu chehunyanzvi chinobva kumasangano epamusoro ekutsvagisa dzimba, anogona kukupa mamwe hunyanzvi zvigadziriso zvekushandisa kwauri.

Isu tinoramba tichigadzira maitiro epamberi ekupa zvimwe zvepamberi zvinhu, uye takagadzira yakasarudzika tekinoroji, iyo inogona kuita kuti chisungo pakati pekupotera neiyo substrate ive yakasimba uye isinganyanye kubatwa.

Tikugashirei noushamwari kuti ushanyire fekitari yedu, ngativei neimwe hurukuro!

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