IC Imwe-Crystal Silicon Epitaxy

Tsanangudzo Pfupi:


  • Nzvimbo Yekwakabva:China
  • Chimiro cheCrystal:FCCβ chikamu
  • Density :3.21 g/cm;
  • Kuoma:2500 Vickers;
  • Saizi yezviyo:2~10μm;
  • Chemical Purity:99.99995%;
  • Heat Capacity :640J·kg-1·K-1;
  • Sublimation Temperature :2700 ℃;
  • Felexural Strength:415 Mpa (RT 4-Point);
  • Young's Modulus :430 Gpa (4pt bend, 1300 ℃);
  • Kuwedzera kweThermal (CTE):4.5 10-6K-1;
  • Thermal Conductivity:300 (W/MK);
  • Product Detail

    Product Tags

    Product Description

    Kambani yedu inopa SiC yekuvhara maitiro masevhisi neCVD nzira pamusoro pegraphite, ceramics uye zvimwe zvinhu, kuitira kuti akakosha magasi ane kabhoni nesilicon aite pakupisa kwepamusoro kuti awane kuchena kwakanyanya kweSiC mamorekuru, mamorekuru akaiswa pamusoro pezvinhu zvakavharwa, kugadzira SIC inodzivirira layer.

    Main features:

    1. High tembiricha oxidation kuramba:

    iyo oxidation kuramba ichiri yakanaka kwazvo kana tembiricha yakakwira kusvika 1600 C.

    2. High kuchena : yakagadzirwa nemakemikari vapor deposition pasi pekushisa kwakanyanya kweklorination mamiriro.

    3. Erosion resistance: high hardness, compact surface, fine particles.

    4. Corrosion resistance: acid, alkali, munyu uye organic reagents.

    Zvikuru Zvinotsanangurwa zveCVD-SIC Coating

    SiC-CVD Properties

    Crystal Structure FCC β chikamu
    Density g/cm³ 3.21
    Kuoma Vickers kuoma 2500
    Saizi yezviyo μm 2~10
    Chemical Purity % 99.99995
    Heat Capacity J·kg-1 ·K-1 640
    Sublimation Temperature 2700
    Felexural Strength MPa (RT 4-poindi) 415
    Young's Modulus Gpa (4pt bend, 1300 ℃) 430
    Kuwedzera kweThermal (CTE) 10-6K-1 4.5
    Thermal conductivity (W/mK) 300

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