O le SiC o loʻo i ai mea faʻapitoa faʻaletino ma vailaʻau, e pei o le maualuga o le liusuavai, maualuga le maaa, faʻafefeteina ma le faʻamaʻiina. Aemaise lava i le va o le 1800-2000 ℃, SiC o loʻo i ai le teteʻe lelei o le ablation. O le mea lea, o loʻo i ai avanoa lautele faʻaoga i le aerospace, meafaigaluega o auupega ma isi fanua. Ae ui i lea, SiC lava ia e le mafai ona faʻaaogainase fausagameafaitino,o lea e masani ona faʻaaogaina le auala faʻapipiʻi e faʻaogaina ai lona faʻaogaina ma le ablation resistancece.
Silicon carbide(SIC) mea semiconductor o le lona tolu o augatupulaga semea miconductor atiina ae ina ua mavae le uluai augatupulaga elemene semiconductor mea (Si, GE) ma le lona lua o augatupulaga tuufaatasia mea semiconductor (GaAs, va, InP, ma isi). I le avea ai o se mea semiconductor gap lautele, carbide silicon o loʻo i ai uiga o le lautele o le faʻaupuga lautele, maualuga le malepelepe malosi fanua, maualuga le vevela conductivity, maualuga carrier saturation feʻaveaʻi saoasaoa, dielectric faifai pea, malosi faʻavevela tetee ma lelei mautu kemisi. E mafai ona faʻaaogaina e gaosia ai le tele o masini maualuga ma maualuga le malosi ma le maualuga o le vevela ma e mafai ona faʻaaogaina i taimi e le mafai ai ona faʻaogaina masini silicon, Pe maua ai le aafiaga o masini silicon e faigata ona gaosia i faʻaoga lautele.
Fa'aoga autu: fa'aaogaina mo le tipiina o le uaea o le 3-12 inisi monocrystalline silicon, polycrystalline silicon, potassium arsenide, quartz crystal, ma isi mea fa'ainisinia fa'ainisinia mo alamanuia photovoltaic sola, alamanuia semiconductor ma alamanuia tioata piezoelectric.Fa'aaogaina isemiconductor, uila uila, elemene eletise, talosaga maualuga le vevela, suʻesuʻega ultraviolet, mea faʻatulagaina, suʻesuʻega o le vateatea, taofi tisiketi, pipii, faamama o le tiso, pyrometer filament, ata tifaga, meafaigaluega tipi, mea faʻavevela, suauʻu faaniukilia, teuga, uʻamea, mea e puipui ai, lagolago fa'atosina ma isi matā'upu
Taimi meli: Feb-17-2022